Name: IPD35N12S3L24ATMA1
Brand: Infineon Technologies
SKU: IPD35N12S3L24ATMA1TR-ND
Price: 2.484 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD35N12S3L24ATMA1
DigiKey Part Number	IPD35N12S3L24ATMA1TR-ND - Tape & Reel (TR) IPD35N12S3L24ATMA1CT-ND - Cut Tape (CT) IPD35N12S3L24ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD35N12S3L24ATMA1
Description	MOSFET N-CH 120V 35A TO252-3
Customer Reference
Detailed Description	N-Channel 120 V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series OptiMOS™	Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 71W (Tc)
Part Status Not For New Designs	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 120 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 35A (Tc)	Supplier Device Package PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 24mOhm @ 35A, 10V	Base Product Number IPD35N12
Vgs(th) (Max) @ Id 2.4V @ 39µA