Name: IPB180N10S402ATMA1
Brand: Infineon Technologies
SKU: IPB180N10S402ATMA1TR-ND
Price: 6.756 EUR
Availability: InStock

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IPB180N10S402ATMA1
DigiKey Part Number	IPB180N10S402ATMA1TR-ND - Tape & Reel (TR) IPB180N10S402ATMA1CT-ND - Cut Tape (CT) IPB180N10S402ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB180N10S402ATMA1
Description	MOSFET N-CH 100V 180A TO263-7
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
Datasheet	Datasheet
EDA/CAD Models	IPB180N10S402ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series OptiMOS™	Input Capacitance (Ciss) (Max) @ Vds 14600 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 300W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 180A (Tc)	Supplier Device Package PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V	Base Product Number IPB180
Vgs(th) (Max) @ Id 3.5V @ 275µA