Name: IMYR140R024M2HXLSA1
Brand: Infineon Technologies
SKU: 448-IMYR140R024M2HXLSA1-ND
Price: 17.16 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMYR140R024M2HXLSA1
DigiKey Part Number	448-IMYR140R024M2HXLSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMYR140R024M2HXLSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	39 Weeks
Customer Reference
Detailed Description	N-Channel 1400 V 82A (Tc) 326W (Tc) Through Hole PG-TO247-4-18
Datasheet	Datasheet
EDA/CAD Models	IMYR140R024M2HXLSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 24mOhm @ 32.1A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.1V @ 10.1mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 72 nC @ 18 V
Packaging Tube	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 1000 V
FET Type N-Channel	Power Dissipation (Max) 326W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C
Drain to Source Voltage (Vdss) 1400 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 82A (Tc)	Supplier Device Package PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4