Name: IMW65R026M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW65R026M2HXKSA1-ND
Price: 13.644 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMW65R026M2HXKSA1
DigiKey Part Number	448-IMW65R026M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW65R026M2HXKSA1
Description	IMW65R026M2HXKSA1
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 64A (Tc) 227W (Tc) Through Hole PG-TO247-3-40
Datasheet	Datasheet
EDA/CAD Models	IMW65R026M2HXKSA1 Models

Product Attributes

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 24mOhm @ 34.5A, 20V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.6V @ 7mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
Packaging Tube	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1499 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 227W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 64A (Tc)	Supplier Device Package PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Package / Case TO-247-3