N-Channel 1200 V 56A (Tc) 288W (Tc) Surface Mount PG-HDSOP-22-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 1200 V 56A (Tc) 288W (Tc) Surface Mount PG-HDSOP-22-3
CoolSiC™ G2 1200 V Silicon Carbide Discrete MOSFETs from Infineon PIO | DigiKey

IMCQ120R040M2HXTMA1

DigiKey Part Number
448-IMCQ120R040M2HXTMA1TR-ND - Tape & Reel (TR)
448-IMCQ120R040M2HXTMA1CT-ND - Cut Tape (CT)
448-IMCQ120R040M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer
Infineon Technologies
Manufacturer Product Number
IMCQ120R040M2HXTMA1
Description
SICFET N-CH 1200V 56A 22PWRBSOP
Manufacturer Standard Lead Time
39 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 56A (Tc) 288W (Tc) Surface Mount PG-HDSOP-22-3
Datasheet
 Datasheet
EDA/CAD Models
IMCQ120R040M2HXTMA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™ G2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
39.6mOhm @ 17.5A, 18V
Vgs(th) (Max) @ Id
5.1V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs
42.4 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
288W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-HDSOP-22-3
Package / Case
22-PowerBSOP Module
Product Questions and Answers

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In-Stock: 366
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Quantity
All prices are in EUR
Cut Tape (CT) & Digi-Reel®
QuantityUnit PriceExt Price
1€9.35000€9.35
10€6.43500€64.35
100€4.78590€478.59
* All Digi-Reel orders will add a €5.50 reeling fee.
Tape & Reel (TR)
QuantityUnit PriceExt Price
750€3.94749€2,960.62
1.500€3.90430€5,856.45
Manufacturers Standard Package
Unit Price without VAT:€9.35000
Unit Price with VAT:€11.22000
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