Name: IMBG120R034M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG120R034M2HXTMA1TR-ND
Price: 11.784 EUR
Availability: InStock

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IMBG120R034M2HXTMA1
DigiKey Part Number	448-IMBG120R034M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG120R034M2HXTMA1CT-ND - Cut Tape (CT) 448-IMBG120R034M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG120R034M2HXTMA1
Description	SICFET N-CH 1200V 58A TO263
Manufacturer Standard Lead Time	45 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 58A (Tc) 278W (Tc) Surface Mount PG-TO263-7
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 34mOhm @ 20.4A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.1V @ 6.4mA
Series CoolSiC™ G2	Gate Charge (Qg) (Max) @ Vgs 45 nC @ 18 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1510 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 278W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 58A (Tc)	Supplier Device Package PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA