Name: AIMW120R080M1XKSA1
Brand: Infineon Technologies
SKU: 448-AIMW120R080M1XKSA1-ND
Price: 16.416 EUR
Availability: InStock

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AIMW120R080M1XKSA1
DigiKey Part Number	448-AIMW120R080M1XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMW120R080M1XKSA1
Description	1200V COOLSIC MOSFET PG-TO247-3
Customer Reference
Detailed Description	N-Channel 1200 V 33A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
Datasheet	Datasheet
EDA/CAD Models	AIMW120R080M1XKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V
Series CoolSiC™	Vgs (Max) +20V, -7V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
Part Status Last Time Buy	Power Dissipation (Max) 150W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 33A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 15V	Supplier Device Package PG-TO247-3-41
Rds On (Max) @ Id, Vgs 104mOhm @ 13A, 15V	Package / Case TO-247-3