Name: DMWSH120H18HM4Q
Brand: Diodes Incorporated
SKU: 31-DMWSH120H18HM4Q-ND
Price: 39.228 EUR
Availability: InStock

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DMWSH120H18HM4Q
DigiKey Part Number	31-DMWSH120H18HM4Q-ND
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMWSH120H18HM4Q
Description	SIC MOSFET BVDSS: >1000V TO247-4
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 108A (Tc) 313W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 158 nC @ 18 V
Mfr Diodes Incorporated	Vgs (Max) +22V, -10V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 4206 pF @ 800 V
Part Status Active	Power Dissipation (Max) 313W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Grade Automotive
Drain to Source Voltage (Vdss) 1200 V	Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 108A (Tc)	Mounting Type Through Hole
Drive Voltage (Max Rds On, Min Rds On) 18V	Supplier Device Package TO-247-4
Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V	Package / Case TO-247-4
Vgs(th) (Max) @ Id 4.4V @ 37mA

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In-Stock: 30

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Unit Price without VAT:	€32.69000
Unit Price with VAT:	€39.22800

DMWSH120H18HM4Q