Q3-Class HiPerFET™ Power MOSFETs

IXYS Corporation, a Littelfuse Technology, introduces its Q3-Class HiPerFET™ Power MOSFET family. Available with drain-to-source voltage ratings of 200 V to 1000 V and drain current ratings of 10 A to 100 A respectively, the presented devices provide the end-customer with a broad selection range of power switching solutions that demonstrate exceptional power switching performance, enhanced device ruggedness, and high energy efficiency.

The Q3-Class is a direct result of advancing IXYS/Littelfuse latest PolarHV technology platform to deliver a power switching solution to market that exhibit benchmark electrical and thermal characteristics. These devices feature an optimized combination of low on-state resistance (R_dson) and gate charge (Q_g), resulting in a substantial reduction in the conduction and switching loss of the device. In addition, these devices have lower gate-to-drain charge, lower output capacitance (C_OSS), and lower gate resistance, thus reducing switching losses with faster switching, and lowering gate drive power consumption. Another key benefit for these MOSFETs are the high avalanche energy capability (E_AS) which makes them rugged against overvoltage. moreover, due to the low thermal resistance (R_THJC), these devices exhibit the excellent power dissipation capability along with simplified thermal design.

High frequency switching applications such as (HF) plasma generators, radio frequency (RF) switch-mode power supplies and HF DC-DC converters will greatly benefit using the Q3-Class MOSFETs. Industrial power supplies for plasma heating, steel sheet heating, hardening, and seam welding are prime examples of industrial applications that can that take full advantage of the superior switching performance, energy savings, and high noise immunity these new products have to offer. Furthermore, the enhanced dV/dt ratings and high avalanche energy capabilities provide for additional safety margins for stresses encountered in industrial high voltage switching applications, thus improving upon the long-term reliability of these systems.

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