HMC930A Power Amplifiers

Analog Devices' HMC930A GaAs, pHEMT, MMIC, 0.25 W power amplifiers for EW, ECM, radar, and test equipment applications

Image of Analog Devices' HMC930A Power AmplifiersAnalog Devices' HMC930A are gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifiers that operate from dc to 40 GHz. The HMC930A devices provide 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibit a slightly positive gain slope from 8 GHz to 32 GHz, making them ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifiers' inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).

Features
  • High output power for 1 dB compression (P1dB): 22 dBm
  • High saturated output power (PSAT): 24 dBm
  • High gain: 13 dB
  • High output third-order intercept (IP3): 33.5 dBm
  • Supply voltage: 10 V at 175 mA
  • 50 Ω matched input/output
  • Die size: 2.82 mm x 1.50 mm x 0.1 mm
Applications
  • Test instrumentation
  • Microwave radios and VSATs
  • Military and space
  • Telecommunications infrastructure
  • Fiber optics

HMC930A Power Amplifiers

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
IC RF AMP 0HZ-40GHZ DIEHMC930A-SXIC RF AMP 0HZ-40GHZ DIE0 - Immediate$914.41View Details
IC RF AMP 0HZ-40GHZ DIEHMC930AIC RF AMP 0HZ-40GHZ DIE0 - ImmediateSee Page for PricingView Details
Published: 2016-03-18