Diotec Semiconductor

DI2A2N100D1K Power MOSFET

Diotec Semiconductor's DI2A2N100D1K high voltage MOSFETs offer gate protection and low RDSon

Image of Diotec DI2A2N100D1K Power MOSFET The DI2A2N100D1K by Diotec Semiconductor is an N-channel high voltage power MOSFET in the DPAK package. At nominal 2.2 A and 1000 V, it features high drain-to-source voltage, low on-state resistance, fast switching times, avalanche rating, and ESD protection. These devices are designed to ensure high dv/dt capability for the most demanding applications, improving overall efficiency. Operating junction temperature ranges from -55°C to +150°C. As such, these parts are ideally suited for various commercial and industrial applications, though mainly switching applications, including energy meters, battery management systems, power supplies, DC/DC converters, and many more.

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Features
  • High drain-source voltage
  • ESD protected gate
  • Fast switching times
  • Low gate charge
  • Low thermal resistance
  • Avalanche rated
Applications
  • Power supplies
  • BMS
  • Energy meters
  • DC/DC converters
  • Switching
Specifications
  • 1000 V drain-source voltage (VDSS)
  • 2.2 A continuous drain current (ID)
  • Typical 5.4 R on-state resistance (RDS(on))
  • 1 µA drain-source leakage current (IDSS)
  • ±25 V continuous gate-source-voltage (VGSS)
  • 30 W power dissipation (Ptot)
  • 25 A peak drain current (IDM)
  • 8 A continuous source current (IS)
  • 6 A peak source current (ISM)
  • 45 mJ single pulse avalanche energy (EAS)
  • < 4.2 K/W thermal resistance (RthC)
  • -55°C to +150°C operating junction temperature range (Tj)
  • Gate source ESD protected 2000 V

DI2A2N100D1K Power MOSFET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
MOSFET N-CH 1000V 2.2A TO-252-3DI2A2N100D1KMOSFET N-CH 1000V 2.2A TO-252-34191 - Immediate$1.70View Details
Updated: 2026-01-05
Published: 2024-04-10