Advanced Linear Devices, Inc.

Precision N-Channel EPAD® MOSFET Array

Advanced Linear Devices quad, high drive, Zero-Threshold™ matched pair

Image of Advanced Linear Devices' Precision N-Channel EPAD® MOSFET ArrayAdvanced Linear Devices ALD210800A/ALD210800 precision n-channel MOSFET arrays featuring Zero-Threshold voltage establish new industry benchmarks for forward transconductance and output conductance. Designed with ALD's proven EPAD CMOS technology, the arrays allow circuit designers to build ultra-low supply voltages that were never before possible.

Benefits
  • High transconductance and output conductance
  • Low RDS(ON) of 25 Ω
  • Output current > 50 mA
  • Matched and tracked temperature coefficient
  • Tight lot-to-lot parametric control
  • Positive, zero, and negative VGS(th) temperature coefficient
  • Low input capacitance and leakage currents

EPAD MOSFET Array

ImageManufacturer Part NumberDescriptionPackage / CaseGate Charge (Qg) (Max) @ VgsAvailable QuantityPrice
MOSFET 4N-CH 10.6V 0.08A 16SOICALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC16-SOIC (0.154", 3.90mm Width)-32 - Immediate$7.96View Details
MOSFET 4N-CH 10.6V 0.08A 16SOICALD210800ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC16-SOIC (0.154", 3.90mm Width)-0 - Immediate$9.15View Details
MOSFET 4N-CH 10.6V 0.08A 16PDIPALD210800APCLMOSFET 4N-CH 10.6V 0.08A 16PDIP16-DIP (0.300", 7.62mm)-36 - Immediate$9.90View Details
Published: 2013-05-02