B2S, B4S & B6S Datasheet by Vishay General Semiconductor - Diodes Division

VISHAY. www.vishay.com/doc?99912 ® RoHS cowum DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
B2S, B4S, B6S
www.vishay.com Vishay General Semiconductor
Revision: 19-Aug-13 1Document Number: 88893
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: TO-269AA (MBS)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
PRIMARY CHARACTERISTICS
Package TO-269AA (MBS)
IF(AV) 0.5 A
VRRM 200 V, 400 V, 600 V
IFSM 30 A
IR5 μA
VF at IF = 0.5 A 1.0 V
TJ max. 150 °C
Diode variations Quad
~
~
TO-269AA (MBS)
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B2S B4S B6S UNIT
Device marking code B2 B4 B6
Maximum repetitive peak reverse voltage VRRM 200 400 600 V
Maximum RMS voltage VRMS 140 280 420 V
Maximum DC blocking voltage VDC 200 400 600 V
Maximum average forward output rectified current on
glass-epoxy PCB (fig. 1) IF(AV) 0.5
(1) A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t5.0A
2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUES UNIT
Maximum instantaneous forward
voltage per diode IF = 0.5 A VF 1.0 V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C IR 5.0 μA
TA = 125 °C 100
Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
B2S, B4S, B6S
www.vishay.com Vishay General Semiconductor
Revision: 19-Aug-13 2Document Number: 88893
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B2S B4S B6S UNIT
Typical thermal resistance (1) RJA 90 °C/W
RJL 40
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B2S-E3/80 0.22 80 3000 13" diameter paper tape and reel
020 40 60 80 100 120 140 160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
.8
Glass
Epoxy
PCB
Resistive or Inductive Load
Ambient Tem
p
erature
(
°C
)
Average Forward Rectified Current (A)
110 100
0
5
10
15
20
25
30
35
f = 50 Hz
Number of Cycles
Peak Forward Surge Current (A)
1.0 Cycle
0.4 0.6 0.8 1.0 1.2 1.4
0.01
0.1
1
10
0.5 0.7 0.9 1.1 1.3
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 125 °C TJ = 25 °C
20 40 60 80 100
0.01
0.1
1
10
100
90
70
50
30
10
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
VISHAY. 0029 074 aLw «II—H— I T rol—H— z fizz * - - T T 011mm» 01101250 DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.CUm/doc?91000
B2S, B4S, B6S
www.vishay.com Vishay General Semiconductor
Revision: 19-Aug-13 3Document Number: 88893
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
0.029 (0.74)
0.017 (0.43)
0 to 8°
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
0.114 (2.90)
0.094 (2.40) 0.038 (0.96)
0.019 (0.48)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.023 MIN.
(0.58 MIN.)
0.105 (2.67)
0.095 (2.41)
TO-269AA (MBS)
Mounting Pad Layout
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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