TRF1115 Datasheet by Texas Instruments

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FEATURES
DEVICE INFORMATION
DESCRIPTION
GND
GND
GND
LOP
LNAO
LON
RES
VDD
LOB
VDD
GND
RXI
IFOP
GND
IFON
MXRI
GND
MXRPB
IFB
RFAGC
TRF1115
(TOP VIEW)
1
2
3
4
5
15
14
13
12
11
P0031-03
6789
10
161920 18 17
B0084-03
RXI
VGM
VDD
RFAGC
Mixer
Power
Supply
AGC
LNA
LOBuffer
VGA
LOP
LON
BALUN
LNAO MXRI
IFOP
IFON
BPF
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
2.5-GHz, High Dynamic Range, Low-Noise Down-Converter
Performs First Down-Conversion in MMDS /WCS Radio 2300 MHz to 2700 MHz
Integrated Low Noise, Variable Gain Amplifier
Provisions For An External Image Reject /Band Pass Filter
Differential Mixer Provides Extra NoiseImmunity
Integrated LO Buffer Amplifier
20 dB of Gain With 10 dB of Gain Control
3-dB Noise Figure, Typical
Input Third Order Intercept of 0 dBm, Typical
Input P-1 dB of –5 dBm, Typical
LO Input Power: 3 dBm
The TRF1115 is the first of two ASICs used in thereceiver section of Texas InstrumentsMMDS/MDS/WCS/802.16x chipset. The TRF1115down-converts the input frequency to an IFfrequency in the range of 420 MHz to 480 MHz. The
Figure 1. TRF1115 Pin Outdevice provides a differential output that passesthrough a SAW filter before connecting to a seconddown converter chip. (Note: For the bestperformance, the Texas Instruments TRF1112should be used to perform both the second downconversion and provide the local oscillator for theTRF1115.)
In order to provide exceptional image rejection andextra jammer rejection, the TRF1115 offers a signalpath to an off-chip filter. Specifications are providedassuming an in-band 1.5-dB loss in this filter. TheTRF1115 includes a differential LO buffer, mixer, andIF amplifier for improved performance. After the filter,an on-chip balun converts the signal fromsingle-ended to differential in order to provide betternoise immunity in the mixer.
Figure 2. Block Diagram
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2006, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS
DC SPECIFICATIONS
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
VALUE UNIT
VDD Positive DC Supply Voltage, VDD 0.0 to +5.5 V
IDD Current consumption 200 mA
Pin RF Input Power 5 dBm
T
J
Junction Temperature 200 °C
Pd Power Dissipation 1.1 W
Digital Input Pins –0.3 to 5.5
θ
JC
Thermal Resistance Junction to Case
(1)
9.1 °C/W
T
stg
Storage Temperature –40 to 105 °C
T
op
Operating Temperature –40 to 85 °C
Lead Temperature (40 sec max) 260 °C
(1) Thermal resistance is junction to ambient assuming thermal pad with 16 thermal vias under package metal base. See RecommendedPCB layout.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDD Supply Voltage 5 5.25 V
IDD Supply Current (Total) 130 180 mA
I
LNA
Supply Current, LNA, pin 3 30 mA
I
LO
Supply Current, LO, pin 9 45 mA
I
IF
Supply Current, IF Pins 10 plus IF drain bias on pins 13 and 14. 55 mA
V
C
Gain Control Voltage 0 2 V
I
C
Gain Control Current 0 1.2 mA
2
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ELECTRICAL CHARACTERISTICS
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
Unless otherwise stated VDD = 5.0 V, External Filter loss = 1.5 dB, T
A
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
RF
RF input frequency 2300 2700 MHz
f
LO
LO input frequency 1820 2220 MHz
f
IF
IF output frequency 400 480 500 MHz
G Gain V
C
= 0 V 16 18 dB
Gain control range V
C
> 1.5 V 10 dB
G
NB
Gaub fkatbess / 6 MHz 0.2 dB
NF
HG
Noise figure, high gain V
C
= 0 V 3 4 dB
NF
LG
Noise figure with AGC on V
C
> 1.5 V 6 7 dB
IP-1dB Input power at 1 dB compression, high V
C
= 0 V, Without RF BPF -6 -2 dBmgain
IP-1dB Input power at 1 dB compression with V
C
> 1.5 V, Without RF BPF -1 2 dBmAGC on
IIP3 Input third order intercept point, high gain V
C
= 0 V, Without RF BPF -3 0 dBm
IIP3 Input third order intercept point with AGC V
C
> 1.5 V, Without RF BPF 5 8 dBmon
Z
RF
RF input impedance Differential 50
RL
RF
RF input return loss Z = 50 , P
LO
= 3 dBm, F
RF
= 2500 to 2700 MHz 8 10 dB
Z
LO
LO input impedance Differential 100
P
LO
LO input power Referenced to 100 differential 0 3 6 dB
RL
LO
LO input return loss Differential, with external matching circuit. –10 –12 dBLO input = 3 dBm
Z
IF
IF output impedance Differential 100
RL
IF
IF1 output return loss Differential, with external matching circuit –7 –10 dB
LO to RF leakage, differential LO input = 3 dBm, V
C
= 0 V –35 –45 dBm
LO to IF1 leakage, differential LO input = 3 dBm, V
C
= 0 V –40 –50 dBm
RF to IF1 isolation, differential LO input = 3 dBm, V
C
= 0 V 35 45 dBc
RF to LO insolation, differential LO input = 3 dBm, V
C
= 0 V 25 dBc
TERMINAL FUNCTIONS
TERMINAL
I/O TYPE DESCRIPTIONNO. NAME
1, 2, 6, 12,
GND Ground15, 19
Analog/P Output of LNA, before mixer, Also provides DC bias to FET. Apply 5 V bias thru bias3 LNAO O
ower network.
4 RES Reserved. Do not connect or ground this pin.
Not connected for normal operation. Internal bias for LO buffer. Normal voltage at this pin is5 LOB
3.0 to 3.2 V. Do not ground this pin or connect.
7 LOP I Analog LO input, Positive, ac coupled internally
8 LON I Analog LO input, Negative, ac coupled internally
9 VDD I Power DC bias for LO Buffer +5 V
10 VDD I Power DC bias for IF circuit +5 V
Not connected for normal operation. Internal bias for IF circuitry Normal voltage at this pin11 IFB
is 2.8 to 3.0 V. Do not ground this pin or connect.
Analog/P13 IFON O IF output, negative, and dc bias for IF amplifier. Apply +5 V through bias network.ower
Analog/P14 IFOP O IF output, Positive, and dc bias for IF amplifier. Apply +5 V through bias network.ower
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*9 TEXAS INSTRUMENTS www.ll.com 0 Noise Figure — an 0 2300 2350 2400 2450 2500 2550 2600 2650 270 I» Frequency — MH1 Gum 2300 2350 2400 2450 2500 2550 2600 2650 270 l— Frequency » MHz Gnu:
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TYPICAL CHARACTERISTICS
TYPICAL DATA
f − Frequency − MHz
0
5
10
15
20
25
2300 2350 2400 2450 2500 2550 2600 2650 2700
Gain at Vc = 0 V
Gain − dB
G001
Gain at Vc = 0.5 V
Gain at Vc = 1 V
Gain at Vc = 1.5 V
f − Frequency − MHz
0
1
2
3
4
5
6
7
2300 2350 2400 2450 2500 2550 2600 2650 2700
NF with Vc = 0 V
Noise Figure − dB
G002
NF with Vc = 1.5 V
NF with Vc = 0.5 V
NF with Vc = 1 V
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
TERMINAL FUNCTIONS (continued)
TERMINAL
I/O TYPE DESCRIPTIONNO. NAME
Input voltage for gain control:V
C
= 0 to 1.5 V16 RFAGC I Analog
Maximum gain at V
C
= 0 VMinimum gain at V
C
= 1.5 V
Not connected for normal operation. Internal bias for mixer circuitry. Normal voltage at this17 MXRPB
pin is 1.8 V to 2.5 V. Do not ground this pin or connect to any other pin.
18 MXRI I Analog Input to RF mixer, ac coupled, 50
20 RXI I Analog RF input, ac coupled, 50
Back GND Back of package has metal base that must be grounded for thermal and RF performance.
GAIN NOISE FIGUREvs vsFREQUENCY AND CONTROL VOLTAGE AT 25 °C FREQUENCY AND CONTROL VOLTAGE AT 25°C
Figure 3. Figure 4.
4
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f − Frequency − MHz
−15
−10
5
0
5
10
2300 2350 2400 2450 2500 2550 2600 2650 2700
Input P−12dB − dBm
G003
Input P−1dB at Vc = 1.5 V
Input P−1dB at Vc = 1 V
Input P−1dB at Vc = 0 V
Input P−1dB at Vc = 0.5 V
f − Frequency − MHz
−15
−10
5
0
5
10
2300 2350 2400 2450 2500 2550 2600 2650 2700
Input IP3 − dBm
G004
Input IP3 at Vc = 0.5 V
Input IP3 at Vc = 1.5 V
Input IP3 at Vc = 1 V
Input IP3 at Vc = 0 V
f − Frequency − MHz
−40
−35
−30
−25
−20
−15
−10
−5
0
2.31 2.36 2.41 2.46 2.51 2.56 2.61 2.66 2.71
LO Return Loss
Return Loss − dB
G005
RF Return Loss
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS (continued)
INPUT P-1dB INPUT IP3vs vsFREQUENCY AND CONTROL VOLTAGE AT 25°C FREQUENCY AND CONTROL VOLTAGE AT 25°C
Figure 5. Figure 6.
RF AND LO RETURN LOSS AT 25 °C
Figure 7.
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RECOMMENDED PCB LAYOUT
M0022-04
0.25TYP
Notes:9ViaHoles,Each0.38mm.
SolderMask.NoSolderMaskUnderChip,OnLeadPadsorOnGroundConnections.
DIMENSIONSinmm
DIA 0.38TYP
0.50TYP
0.60TYP
0.20TYP
2.80
2.80
2.00
2.00
PIN1
1.00TYP
1.00TYP
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
A. Four layer Board, Starting material: two: 10 mil core FR4 with 1 oz copper, both sides, pressed with 8 mil thick
prepreg. Via plating ½ oz copper plate, final plate White immersion tin. Final thickness: 0.033” to 0.037” thick.
6
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APPLICATION SCHEMATIC
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
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APPLICATION INFORMATION
TRF1115
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
Figure 8. Package Outline: 4 mm x 4 mm LPCC 20-Pin Leadless Package
8
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TRF1115IRGPR ACTIVE QFN RGP 20 TBD Call TI Call TI TRF
1115
TRF1115IRGPRG3 ACTIVE QFN RGP 20 TBD Call TI Call TI TRF
1115
TRF1115IRGPT ACTIVE QFN RGP 20 250 Green (RoHS
& no Sb/Br)
CU SN Level-3-260C-168 HR TRF
1115
TRF1115IRGPTG3 ACTIVE QFN RGP 20 250 Green (RoHS
& no Sb/Br)
CU SN Level-3-260C-168 HR TRF
1115
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “K0 '«m» Reel Diame|er AD Dimension deswgned to accommodate the componem wwdlh E0 Dimension desxgned to accommodate the componenl \ength KO Dimenslun deswgned to accommodate the componem thickness 7 w OveraH wwdm loe earner cape i p1 Pitch between successwe cavuy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O Sprockemoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TRF1115IRGPR QFN RGP 20 2500 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2
TRF1115IRGPT QFN RGP 20 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 1
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*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TRF1115IRGPR QFN RGP 20 2500 338.1 338.1 20.6
TRF1115IRGPT QFN RGP 20 250 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 2
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