UG4(A,B,C,D) Datasheet by Vishay General Semiconductor - Diodes Division

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UG4A, UG4B, UG4C, UG4D
www.vishay.com Vishay General Semiconductor
Revision: 06-Aug-2018 1Document Number: 88763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV) 4.0 A
VRRM 50 V, 100 V, 150 V, 200 V
IFSM 150 A
trr 20 ns
VF0.95 V
TJ max. 150 °C
Package DO-201AD
Circuit configuration Single
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL UG4A UG4B UG4C UG4D UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200
VMaximum RMS voltage VRMS 35 70 105 140
Maximum DC blocking voltage VDC 50 100 150 200
Maximum average forward rectified current (fig. 1) IF(AV) 4.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 150
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage IF = 4.0 A VF (1) 0.95 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C IR
5.0 μA
TA = 100 °C 300
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20
ns
Typical reverse recovery time IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,
Irr = 10 % IRM
TJ = 25 °C trr
30
TJ = 100 °C 50
Typical stored charge IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,
Irr = 10 % IRM
TJ = 25 °C Qrr
15 nC
TJ = 100 °C 30
Typical junction capacitance 4.0 V, 1 MHz CJ20 pF
VISHAY. DwodesAmencas©wshay£om DwodesAswa@wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
UG4A, UG4B, UG4C, UG4D
www.vishay.com Vishay General Semiconductor
Revision: 06-Aug-2018 2Document Number: 88763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(2) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curves
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL UG4A UG4B UG4C UG4D UNIT
Typical thermal resistance RJA (1) 25 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
UG4D-E3/54 1.138 54 1400 13" diameter paper tape and reel
UG4D-E3/73 1.138 73 1000 Ammo pack packaging
UG4D-M3/54 1.138 54 1400 13" diameter paper tape and reel
UG4D-M3/73 1.138 73 1000 Ammo pack packaging
025 50 75 100 125 150 175
0
1.0
2.0
3.0
4.0
5.0
6.0
Average Forward Rectified Current (A)
Temperature (°C)
TA, Ambient Temperature
P.C.B. Mounted
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
TL Lead Temperature
110 100
10
100
1000
1
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
L
= 75 °C
8.3 ms Single Half Sine-Wave
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
T
J
= 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
020 40 60 80 100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
TJ = 25 °C
TJ = 100 °C
VISHAY. DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEuvogemushauom www.v\shay.com/doc?91000
UG4A, UG4B, UG4C, UG4D
www.vishay.com Vishay General Semiconductor
Revision: 06-Aug-2018 3Document Number: 88763
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Reverse Switching Characteristics Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
025 50 75 100 125 150 175
0
10
20
30
40
50
60
Junction Temperature (°C)
Recovered Stored Change/Reverse
Recovery Time, nC/ns
IF = 4.0 A
VR = 30 V dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
trr
Qrr
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
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