SiC Power Devices Catalog Datasheet by Rohm Semiconductor

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SiC Power Devices
vol.3
of November, 2013.
No.56P6733E 11.2013 1500SG
The Industry's First Mass-Produced
"Full SiC" Power Modules
ROHM now offers SiC power devices featuring a number of characteristics,
including: high breakdown voltage, low power consumption,
and high-speed switching operation not provided by conventional silicon devices.
In response to the growing demand for SiC products,
ROHM has implemented the world's first full-scale,
mass production of next-generation SiC components.
Full SiC Power Module
d (MV/C m) Y (W/Cm'C) 3.0 3.2 4.9 ! 2mm 2m 2m 2m3 2am 1m 2m 2m 1m me me Market breast (or M power dewces Source Yoke Développement
SiC Power Devices
03 SiC Power Devices 04
■long - term market forecast for SiC devices
 in various power applications
900
800
700
600
500
400
300
200
100
0
2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020
market size(M$)
Market forecast for SiC power devices Source: Yole Développement
R&D / High T°/ Others
Ships & Vessels
Smart Grid Power
Rail traction
PV inverters
Wind Turbine
Motor AC Drive
UPS
EV / HEV
PFC
+26%/year
+39%/year
The demand for power is increasing on a global scale every year while
fossil fuels continue to be depleted and global warming is growing at an alarming rate.
This requires better solutions and more
effective use of power and resources.
ROHM provides Eco Devices designed for lower power consumption
and high efficiency operation. These include highly integrated circuits
utilizing sophisticated, low power ICs, passive components,
opto electronics and modules that save energy and reduce CO₂ emissions. Included are
next-generation SiC devices that promise even lower
power consumption and higher efficiency.
SiC - the next generation of compact,
energy-saving Eco Devices
Lower power loss and
high temperature operation in
a smaller form factor
 
In the power device field for power conversion
and control, SiC (Silicon Carbide) is garnering
increased attention as a next-generation
semiconductor material due to its superior
characteristics compared with silicon, including
lower ON-resistance, faster switching speeds,
and higher temperature operation.
Implementing SiC devices in a
variety of fields, including the
power, automotive,
railway, industrial,
and consumer sectors
 
SiC devices allow for smaller products with lower
power consumption that make mounting possible
even in tight spaces. Additional advantages
include high voltage and high temperature
operation, enabling stable operation under harsh
conditions
̶
impossible with silicon-based products.
In hybrid vehicles and EVs SiC power solutions
contribute to increased fuel economy and a
larger cabin area, while in solar power generation
applications they improve power loss by
approximately 50%, contributing to reduced
global warming.
■Performance Comparison: SiC vs. Si
Breakdown
Electric Field (MV/cm)
Bandgap (eV)
Thermal
Conductivity (W/cm℃)
Si 0.3 / SiC 3.0 Si 1.1 / SiC 3.2 Si 1.5 / SiC 4.9
■Power Loss Comparison
Si(IGBT+FRD)
900
800
700
600
500
400
300
200
100
0
(W)
SiC(MOSFET+SBD)
Conduction
Loss
［w］
Turn off loss
［w］
Turn on loss
［w］
Power loss reduced by 47%,
Switching loss decreased by 85%
Measurement Conditions
Tj=125℃
600V
100A
Power Loss per Arm
High voltage
Low ON-resistance
High-speed switching
・Higher voltages & currents
・Low conduction loss
・Reduced switching loss
・Smaller cooling systems
・Higher power density
・System miniaturization
High temperature
operation (over 250ºC)
High heat
dissipation
Reduce power loss
Power transmission
systems
Reduce inverter size
and weight
Railway
Reduce cooling system size,
decrease weight,
and increase fuel economy
EV (i.e. hybrid/electric vehicles)
Increase power
conditioner efficiency
Photovoltaics
Reduce data center
power consumption by
minimizing server power loss
Servers
Energy-saving air
conditioners and IH cooktops
Consumer electronics
Reduces power loss
and size
Industrial equipment
SiC MOSFET I Internal Circuit Diagram I Lineup E E --— I I my my - W? “a? ‘i ‘
SiC Power Devices
05 SiC Power Devices 06
SiC MOSFET
Mass Produced
Mass Produced
Turn OFF Characteristics (Compared with 1200V-Class Products)
ON-Resistance Temperature Characteristics (Compared with 650V-Class Products)
The industry's first mass-produced SiC makes
the previously impossible ''possible''
SiC Power Device
Low switching
loss makes SiC the
ideal replacement
■ Ideal replacement for Si IGBT modules
Features (BSM120D12P2C005)
Full SiC Power Module
Current (A)
Time (nsec)
50 100 150 200 250 300 350 400 4500
Vdd=400V
Rg=5.6Ω
25
20
15
10
5
0
-5
Switching loss reduced
by 90% (max.)
Switching Loss Comparison
1
Gate resistance Rg（Ω）
60
50
40
30
20
10
0
Esw（mJ）
10 100
Reference values evaluated under the same conditions
Vds=600V
Id=100A
Vg（on）=18V
Vg（off）=0V
Tj=125℃
Inductive load
Si IGBT Module
(Competitor)
Full SiC Power Module
ON-Resistance（Ω）
Temperature（℃）
Si MOSFET
Si-Super Junction
MOSFET
SiC MOSFET
0
0 50 100 150 200
2
4
6
8
10
12
0.22 to 0.24 ohms
even at 120°C
Si IGBT
SiC MOSFET
*Compared with conventional Si IGBT modules
250% less volume*
1
Switching loss reduced by 85% (max.)*
3
High-speed switching
4
1200V rated voltage / 120A rated current
50% less
volume
45.6mm
122mm
21mm
ROHM SiC power modules reduce switching loss considerably, making them
ideal for replacing Si IGBT modules (depending on the operating conditions).
Reduced 85% (max.)
High speed switching with low ON- resistance
 
SiC enables simultaneous high speed switching with low
ON-resistance ‒ normally impossible with silicone-based
products. Additional features include superior electric
characteristics at high temperatures and significantly lower
switching loss, allowing smaller peripheral components to
be used.
Switching loss reduced by 85% (max.)
 
ROHM has developed low-surge-noise power modules
integrating SiC devices produced in-house, maximizing
high-speed performance. The result is significantly reduced
switching loss compared with conventional Si IGBTs.
Full SiC Power Module (120A)
Si IGBT (200A to 400A)
（BSM120D12P2C005）
■ Internal Circuit Diagram (Half Bridge Circuit)
■ Lineup
BSM120D12P2C005
1200V
ID120A
Package
Module
BVDSS
180A
BSM120D12P2C005 BSM180D12P2C101
BSM180D12P2C101
TO-247［3pin］
TO-220AB［3pin］
■ Internal Circuit Diagram ■ Lineup
Package
TO-220AB
［3pin］
SCH2080KE
SCT2080KE
TO-247
［3pin］
1200V650V
BVDSS
400V
RDS (on）
120mΩ 80mΩ 160mΩ 280mΩ 450mΩ120mΩ
̶ ̶
̶ ̶ ̶ ̶
SCT2160KE SCT2280KE SCT2450KE
SCTMU001F SCT2120AF
Drain
Gate
Source
MOSFET
SCT Series SCH Series
Drain
Gate
Source
MOSFET SBD
SiC SiF ma m 1500 ; f 400 New WW New W W W W W W 552m scszosA scszmA 552m SCSZISA scszzaA
■ Lineup
■ IPM Operating Waveforms (BM6101FV-C)
Parameter
Input Supply Voltage
Output Supply Voltage
Output VEE Voltage
Operating Temperature Range
VCC1
VCC2
VEE2
Ta
4.5
14
-12
-40
5.5
24
0
125
V
V
V
℃
Symbol Min. Max. Unit
〈Conditions〉 ROHM SiC IPM  VCC1＝5.0 VCC2＝18V VEE２＝-5V VPN＝800V Ta=25℃ 
2μs/div.
IN（10V/div.）
SiC FET Gate（20V/div.）
Id（500A/div.）
V
A
SiC FET Drain（500V/div.）
Gate
Driver
IN g
d
s
P
N
SiC MOSFET
SiC SBD
800V
18V
5V
5V
ROHM’s unique IC technology maximizes
SiC characteristics
DRIVER
SiC Power Devices 08
SiC Power Devices
07
Switching Waveforms (SCS110AG)
12
10
8
6
4
2
0
-2
-4
-6 100
Time (nsec)
200
SiC SBD
Si FRD
Switching loss
reduced by 60%
Mass Produced
SiC SBD (Schottky Barrier Diodes)
Under Development
Isolated Gate Driver
・
High-speed operation with a max. I/O delay time of 150ns
・Core-less transformer utilized for 2,500Vrms isolation
・Original noise cancelling technology results in high
CMR (Common Mode Rejection).
・
Supporting high VGS/negative voltage power supplies*
・Compact package (6.5×8.1×2.01 mm)
*BM6101FV-C,
BM6104FV-C
■ Recommended Operating Range (BM6101FV-C)
Current (A)
VR=400V
di/dt=350A/μsec
Stable operation
ensured up to
800V/400A output
High-speed operation supports SiCSignificantly lower switching loss
 
SBDs were developed utilizing SiC, making them ideal for PFC circuits and
inverters. Ultra-small reverse recovery time (impossible to achieve with silicon FRDs)
enables high-speed switching. This minimizes reverse recovery charge (Qrr)
,
reducing switching loss considerably and contributes to end-product miniaturization.
TO-220AC［2pin］
TO-220FM［2pin］
LPTL［4pin］
TO-247［3pin］
Dual-Chip
■ Lineup
2nd Generation
Package 6A 8A 10A 12A 15A 20A 30A 40A 5A 10A 15A 20A 30A 40A
650V 1200V
TO-220AC［2pin］
SCS206AG SCS208AG SCS210AG SCS212AG
SCS215AG
SCS220AG
̶ ̶
SCS205KG SCS210KG SCS215KG SCS220KG
̶ ̶
TO-220FM［2pin］
SCS206AM SCS208AM SCS210AM SCS212AM
SCS215AM
SCS220AM
̶ ̶ ̶ ̶ ̶ ̶ ̶ ̶
TO-247［3pin］
̶ ̶ ̶ ̶ ̶
SCS220AE2
SCS230AE2
SCS240AE2
̶
SCS210KE2
̶
SCS220KE2
SCS230KE2 SCS240KE2
LPTL［4pin］
SCS206AJ SCS208AJ SCS210AJ SCS212AJ SCS215AJ SCS220AJ
̶ ̶ ̶ ̶ ̶ ̶ ̶ ̶
SSOP-B20W
Part No.
BM6101FV-C
BM6102FV-C
BM6104FV-C
3.0A
3.0A
3.0A
2,500Vrms
2,500Vrms
2,500Vrms
○
̶
○
350ns
200ns
150ns
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Features
DESAT
Rated Output
Current (Peak)
Isolation
Voltage
Negative Power
Supply Compatibility
I/O Delay
Time
Over current
Detection
Mirror Clamp
Function
Soft Turn OFF
Function
Error Status
Output
SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe,
became a member of the ROHM Group in 2009.
SiCrystal was established in 1997 in Germany based on a SiC
monocrystal growth technology development project launched in 1994.
Mass production and supply of SiC wafers began in 2001.
In 2012, SiCrystal relocated to a new plant in Nüremberg to increase production capacity.
With the corporate philosophy "Stable Quality", SiCrystal has adopted
an integrated wafer production system from raw SiC material to crystal growth,
wafer processing, and inspection, and in 1999 was granted ISO9001 certification.
■ Manufactured Product: SiC Wafers
150mm
（6inch）
Preparing for mass production
2inch 3inch
100mm
（4inch）
Mass Production
4. Slicing 5. Sanding /
Edge polishing /
Cleaning
Nürnberg
SiC Wafer
1. Crystal
growth
Advanced Crystallization Technology
For SiC: For Si:
2. External polishing 3. Flat
formation
Acquired ISO9001 Certification
Temperature:
2,000 to 2,400°C
Principle:
Temperature: 1,230 to 1,260°C
Principle:
■ SiC Wafer Production
SiC ingots are produced via a crystal growth process utilizing a sublimation method called "Rayleigh's method" that sublimates SiC powder and
recrystallizes it under cold temperatures. Compared with conventional Si ingots which are crystalized in the liquid phase from Si melt, the growth
rate using the sublimation method is slow, making crystal defects likely to occur, and therefore requires precision technology for crystal control.
SiCrystal utilizes advanced crystallization technology to produce stable quality wafers.
Transports sublimated gas to the
surface of the seed crystal by a
heat gradient in order to recrystallize
it.
Crystal control is difficult and the
growth rate is slow compared with
liquid phase growth.
Insulating
Material
Water-Cooled
Coils Crucible
Seed
Crystal
Liquid-phase growth during which Si
melt is solidified on the seed crystal.
This method is characterized by fast
crystal growth.
SiC
Powder
Diodes Transistors
DISCRETE
SiC Power Devices
09 SiC Power Devices 10
100% in-house production system
High quality ensured through
a consistent production system
Quality First is ROHM’s official corporate policy. In this regard
a consistent production system was established for SiC
production. The acquisition of SiCrystal (Germany) in 2009
has allowed ROHM to perform the entire manufacturing
process, from wafer processing to package manufacturing,
in-house. This not only ensures stable production and
unmatched quality, but lowers cost competitiveness and
enables the development of new products.
In-house production equipment
ASSYLINE
High quality, high volume, and stable manufacturing
are guaranteed utilizing in-house production
equipment.
SiC processes
WAFER
PROCESS
High quality lines integrating SiC’s
unique processes are utilized.
Low inductance module
A low inductance module utilizing
SiC’s high-speed characteristics
was developed
Cutting-edge, self-sufficient
manufacturing facility
ONSITEPLANT
In addition to in-house power
generation, all materials required for
manufacturing, such as hydrogen,
oxygen, and nitrogen, are included
on site.
CAD
In-house photo masking
Enabling uniform quality control from
SiC chip design to photo masking
WAFER
SiC wafer manufacturing
ROHM acquired SiCrystal (a German SiC
substrate manufacturer), resulting in stable
supply of high-quality SiC substrates.
CHIPDESIGN
High quality design
Master engineers are on hand
to ensure high quality designs.
MODULES
ROHM is actively involved in partnerships with major universities in a variety of fields in order to share expertise,
cultivate new technologies, and collaborate on breakthrough R&D.
State-of-the-art industry-academia R&D collaboration
Development of
mass-produced SiC epitaxial
growth equipment
In 2007 ROHM, along with Kyoto
University and Tokyo Electron,
developed mass production SiC
epitaxial growth equipment that can
processes multiple SiC wafers in a
single operation. Fast development
was made possible by efficiently
sharing technologies. These new
equipment are currently used for
mass producing ROHM SiC devices.
3-institution technological
collaboration enables rapid
development of high-quality
SiC devices
Developed the industry’s first SiC
Trench MOSFET utilizing an
aluminum oxynitride (AION) layer
on the gate insulating film. The
result is 1.5x the breakdown
voltage and 90% lower leakage
current vs. conventional thermally
oxidized films (SiO2) for greater
reliability with lower loss. Expected
to find wide adoption in electric
vehicles, industrial equipment, and
trains in the near future.
Osaka University × Kyoto University × Tokyo Electron × ROHM
High performance SiC MOSFET with
High-k gate is currently under development
Characteristics improvement
based on new materials, 1.5
times the breakdown voltage,
90% lower leakage current
ROHM
Osaka University
University
Tokyo Electron
Company
Kyoto University
High performance
SiC MOSFET is
currently under
development
SiC Power Devices
11 SiC Power Devices 12
Research & Development
■ Future solutions for high temperature operation
High temperature operation,
high voltage IPM
(Intelligent Power Module)
High temperature, high voltage
devices manufactured in-house
combined with original high heat
resistant packaging technology.
Development of high temperature operation
(Tj=225°C) transfer mold modules
ROHM has developed SiC modules capable of operating at thigh temperatures for inverter driving in
automotive systems and industrial devices. These transfer mold modules are the first in the industry to ensure
stable operation up to 225℃ while maintaining the compact, low-cost package configurations commonly used
in current Si devices. This contributes to wide compatibility and ensures ready adoption. Modules
incorporating 6 devices and featuring 1200V/300A operation at temperatures up to 225℃ are available.
Gate drivers using SOI wafers are
currently under development. They are
expected to achieve higher speeds
with lower power consumption.
High temperature SiC gate drivers
Operation has been verified above
200ºC. Evaluating reliability at high
temperatures is the next step.
SiC high temperature devices
Devices featuring new materials and
designs are currently being developed
with higher temperature capability.
High temperature capacitors
Unique technology was used to
develop high temperature
packaging suitable for SiC devices.
High temperature
packaging technology
Compact
High
temperature
High
power
High
efficiency
Kyoto University × Tokyo Electron × ROHM
ROHM, in collaboration with major motor manufacturers, is focused on developing SiC modules for
next-generation vehicle motors that utilize a number of compact products developed in-house, from
gate driver ICs to transistors, diodes, and resistors.
Previously, no electronic devices could be built into motors due to the extreme temperatures. However,
ROHM SiC module technology allows compact integration of electronic components within the motor,
making it possible to produce high efficiency motors with built-in inverters.
An ultra-compact large current SiC IPM has been realized by attaching a high-temperature-resistant
micro-mold-type SiC module directly to a cooler.
New
TOPICS
Proprietary technology makes it possible to
develop ultra-compact large current SiC IPMs.
SiC Power Module
SiC Power Module
Air Cooled System
1/10 th the volume of
conventional Si inverters
Si(IGBT)
Power Module
Water Cooled Heat Sink
Radiator
Reservoir Tank
Water Pump
Si(IGBT) Power Module
Water Cooled System
Conventional HEV
115mm
16mm
40mm
Air Cooled Heat Sink
Sig nif ica nt ly do w n sizing o f t h e in ver t er
Only this size of
Power module
can drive 60kW
class motor
SiC Power Devices
13
SiC power devices deliver superior energy savings.
ROHM is expanding its lineup of SiC power devices with
innovative new products that minimize power consumption in
order to reduce greenhouse gas emissions and lessen
environmental impact.
SiC Eco Devices
Reducing environmental load
ROHM has been focused on developing SiC for use as a material for next-generation power
devices for years, collaborating with universities and end-users in order to cultivate technological
know-how and expertise. This culminated in Japan's first mass-produced Schottky barrier diodes in
April 2010 and the industry’s first commercially available SiC transistors (MOSFET) in December.
And in March 2012 ROHM unveiled the industry's first mass production of Full SiC Power Modules.
SiC Technology Breakthroughs
Focusing on cutting-edge SiC technology
and leading the industry through innovative R&D
❹
20% Duty Cycle
Max Temp = 250.8℃
80% Duty Cycle
❷
❶
Begin preliminary experiments
with SiC MOSFETs
(Jun 2002)
Develop SiC MOSFET prototypes
(Dec 2004)
Ship SiC MOSFET samples
(Nov 2005)
Announce the development
of SiC MOSFETs with the
industry’s smallest ON-resistance
(3.1mΩcm²)
(Mar 2006)
ROHM, along with Kyoto
University and Tokyo Electron,
announce the development of
SiC epi film mass-production
technology
(Jun 2007)
Trial manufacture of large
current (300A) SiC MOSFETs
and SBDs (Schottky Barrier
Diodes)
(Dec 2007)
Develop a new type of SiC
diode with Nissan Motors
(Apr 2008)
Release trench-type MOSFETs
featuring the industry’s smallest
ON-resistance: 1.7mΩcm²
(Sep 2008)
Nissan Motors conducts a
driving experiment of a fuel-cell
vehicle equipped with an
inverter using ROHM's SiC diode
(Sep 2008)
Honda R&D Co., Ltd. and
ROHM test prototype SiC
power modules for hybrid
vehicles ❶
(Sep 2008)
ROHM tests prototype high
temperature operation power
modules that utilize SiC elements
and introduces a demo capable
of operation at 250 ºC
❷
(Oct 2008)
2002 2005 2007 2008
2009 2010 2011 2012
The ROHM Group acquires
SiCrystal, an SiC wafer
manufacturer ❸
(Jul 2009)
Develop the industry’s first
high current low resistance
SiC trench MOSFET
(Oct 2009)
Establish an integrated SiC
device production system.
Begin mass production of
SiC SBDs ❹
(Apr 2010)
Successfully develop the
industry's first SiC power
modules containing trench
MOSFETs and SBDs that can
be integrated into motors
(Oct 2010)
Begin mass production of
SiC MOSFETs
(Dec 2010)
Develop the industry's first
transfer mold SiC power modules
capable of high temperature
operation (up to 225°C) ❺
(Oct 2011)
APEI Inc. (Arkansas Power
Electronics International) and
ROHM develop high-speed,
high-current (1000A-class) SiC
trench MOS modules
(Oct 2011)
Launch the industry's first
mass production of ''Full SiC''
power modules with SiC
SBDs and SiC MOSFETs
❻
(Mar 2012)
Begin mass production of
SiC-MOS Module
(Dec 2012)
H i s t o r y
❺ ❻
❸
SiC Power Devices
vol.3
of November, 2013.
No.56P6733E 11.2013 1500SG