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SQ3427AEEV-T1_GE3 P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP
Price & Procurement
12 317 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,62000 0,62 €
10 0,54100 5,41 €
25 0,50800 12,70 €
100 0,36880 36,88 €
250 0,35572 88,93 €
500 0,30816 154,08 €
1 000 0,26227 262,27 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQ3427AEEV-T1_GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 12 000 - Immediate
  • Unit Price: 0,24586 €
  • Digi-Reel®  : SQ3427AEEV-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 12 317 - Immediate
  • Unit Price: Digi-Reel®

SQ3427AEEV-T1_GE3

Datasheet
Digi-Key Part Number SQ3427AEEV-T1_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQ3427AEEV-T1_GE3
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Description MOSFET P-CH 60V 6TSOP
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP

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Documents & Media
Datasheets SQ3427AEEV
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 30V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQ3427AEEV-T1_GE3CT