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SI2333DS-T1-E3 P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
35 944 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,59000 0,59 €
10 0,51700 5,17 €
25 0,48640 12,16 €
100 0,35290 35,29 €
250 0,34028 85,07 €
500 0,29480 147,40 €
1 000 0,25089 250,89 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI2333DS-T1-E3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 33 000 - Immediate
  • Unit Price: 0,23521 €
  • Digi-Reel®  : SI2333DS-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 35 944 - Immediate
  • Unit Price: Digi-Reel®

SI2333DS-T1-E3

Datasheet
Digi-Key Part Number SI2333DS-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI2333DS-T1-E3
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Description MOSFET P-CH 12V 4.1A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2333DS
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4,5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 6V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2333DS-T1-E3CT