DMC2020USD Datasheet by Diodes Incorporated

a ZHEX Lug...“ mm CEO :Cl CE :CI 3.. CE :CI \~ . ‘ CE :CI 7 E E1 E1 3:: 311 D I] CI I] DMC2020USD 10111 Document number 0532121 Rev 472 www.diodes.com

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20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device V(BR)DSS RDS(on) max

ID Max

TA = 25°C

(Notes 3 & 5)

Q1 20V

20mΩ @ VGS = 4.5V 8.5A

28mΩ @ VGS = 2.5V 7.2A

Q2 -20V

33mΩ @ VGS = -4.5V -6.8A

45mΩ @ VGS = -2.5V -5.8A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Motor control

• DC-DC Converters

• Power management functions

• Notebook Computers and Printers

Features and Benefits

• Reduced footprint with two discretes in a single SO8

• Low gate drive

• Low input capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected up to 2kV

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 1)

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMC2020USD-13 C2020UD 13 12 2,500

Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.

Marking Information

SO-8

Top View Top View

D1S1

G1

S2

G2

D1

D2

Equivalent Circuit

C2020UD

YY WW

= Manufacturer’s Marking

C2020UD = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week (01 - 53)

ESD PROTECTED TO 2kV

Q1 N-Channel Q2 P-Channel

Source

Gate

Drain

Body

Diode

Gate

Protection

Diode Source

Gate

Drain

Body

Diode

Gate

Protection

Diode

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Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units

Drain-Source Voltage VDSS 20 -20 V

Gate-Source Voltage VGSS ±10 ±10

Continuous Drain Current VGS = 4.5V

(Notes 3 & 5)

ID

8.5 -6.8

A

TA = 70°C (Notes 3 & 5) 6.8 -5.4

(Notes 2 & 5) 6.5 -5.2

(Notes 2 & 6) 7.8 -6.3

Pulsed Drain Current VGS = 4.5V (Notes 4 & 5) IDM 33.6 -26.8

Continuous Source Current (Body diode) (Notes 3 & 5) IS 4.0 -4.0

Pulsed Source Current (Body diode) (Notes 4 & 5) ISM 33.6 -26.8

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit

Power Dissipation

Linear Derating Factor

(Notes 2 & 5)

PD

1.25

10

W

mW/°C

(Notes 2 & 6) 1.8

14.3

(Notes 3 & 5) 2.14

17.2

Thermal Resistance, Junction to Ambient

(Notes 2 & 5)

RθJA

100

°C/W

(Notes 2 & 6) 70

(Notes 3 & 5) 58

Thermal Resistance, Junction to Lead (Notes 5 & 7) RθJL 51

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t ≤ 10 sec.

4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.

5. For a dual device with one active die.

6. For a device with two active die running at equal power.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

5-ODES P'°“”°‘”""°‘ a zmx Febmary 21m a; Dmdes \ncuvpmaled

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Thermal Characteristics

0.1 1 10

10m

100m

1

10

0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

100µ 1m 10m 100m 1 10 100 1k

1

10

100

0.1 1 10

10m

100m

1

10

25 mm x 25 mm

1oz FR4

25 mm x 25 mm

1oz FR4

25 mm x 25 mm

1oz FR4

One active die

100us

100ms

1s

RDS(ON)

Limited

1ms

N-channel Safe Operating Area

Single Pulse

Tamb= 25°C

One active die

DC

10ms

ID Drain Current (A)

VDS Drain-Source Voltage (V)

One active die

Two active die

Derating Curve

Max Power Dissipation (W)

Temperature (°C)

D=0.2

D=0.5

D=0.1

Transient Thermal Impedance

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

Tamb= 25°C

One active die

Pulse Power Dissipation

Maximum Power (W)

Pulse Width (s)

Single Pulse

Tamb= 25°C

One active die

1s

DC

100ms

RDS(ON)

Limited

P-channel Safe Operating Area

-VDS Drain-Source Voltage (V)

-ID Drain Current (A)

10ms 1ms 100us

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Electrical Characteristics – Q1 N-CHANNEL @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS 20 - - V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current IDSS - - 1.0

μA VDS = 20V, VGS = 0V

Gate-Source Leakage IGSS - - ±10

μA VGS = ±10V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage VGS

(

th

)

0.5 1.1 1.5 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance (Note 8) RDS (ON) - 13 20 mΩ VGS = 4.5V, ID = 7A

18 28 VGS = 2.5V, ID = 3A

Forward Transfer Admittance (Notes 8 & 9) |Yfs| - 16 - S

VDS = 5V, ID = 9.4A

Diode Forward Voltage (Note 8) VSD - 0.7 1.2 V

VGS = 0V, IS = 1.3A

Continuous Source Current IS - - 1.8 A -

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance Ciss - 1149 -

pF VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 157 -

Reverse Transfer Capacitance Crss - 142 -

Gate Resistance R

g

- 1.51 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (Note 10) Q

g

- 6.0 -

nC

VGS = 2.5V

VDS = 10V

ID = 9.4A

Total Gate Charge (Note 10) Q

g

- 11.6 -

VGS = 4.5V

Gate-Source Charge (Note 10) Q

g

s - 2.7 -

Gate-Drain Charge (Note 10) Q

g

d - 3.4 -

Turn-On Delay Time (Note 10) tD

(

on

)

- 11.67 -

Turn-On Rise Time (Note 10) t

r

- 12.49 -

ns VGS = 4.5V, VDS = 10V,

RG = 6Ω , ID = 1A

Turn-Off Delay Time (Note 10) tD

(

off

)

- 35.89 -

Turn-Off Fall Time (Note 10) tf - 12.33 -

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.

10. Switching characteristics are independent of operating junction temperatures.

Typical Characteristics – Q1 N-CHANNEL

0

5

10

15

20

25

30

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.8V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 3.5V

GS

V = 4.0V

GS

V = 4.5V

GS

V = 10V

GS

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

0

5

10

15

20

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

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0

0.01

0.02

0.03

0.04

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

GS

V = 2.5V

GS

0 5 10 15 20

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

0

0.01

0.02

0.03

0.04

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

V = 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 2.5V

I = 5A

GS

D

V = 4.5V

I = 10A

GS

D

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0

0.01

0.02

0.03

0.04

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

V = 4.5V

I = 10A

GS

D

V = 2.5V

I = 5A

GS

D

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

I, S

O

U

R

C

E

C

U

R

E

N

T

(A)

S

T = 25°C

A

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100

1,000

10,000

048121620

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

C

iss

C

oss

C

rss

0 5 10 15 20

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

100,000

I, D

R

AI

N

-S

O

U

R

C

E LEAKA

G

E

C

U

R

E

N

T

(nA)

DSS

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0 5 10 15 20 25

Q , OTAL GATE CHARGE (nC)

Fig. 11 Gate-Source Voltage vs. Total Gate Charge

g

T

0

2

4

6

8

10

V, A

T

E-S

O

U

R

C

E V

O

L

T

A

G

E(V)

GS

G

V = 10V

I = 9.4A

DS

D

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Electrical Characteristics – Q2 P-CHANNEL @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS -20 - - V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current IDSS - - -1.0

μA VDS = -20V, VGS = 0V

Gate-Source Leakage IGSS - - ±10

μA VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

th

)

-0.4 -0.7 -1.0 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance (Note 11) RDS (ON) - 26 33 mΩ VGS = -4.5V, ID = -6A

33 45 VGS = -2.5V, ID = -3A

Forward Transfer Admittance (Note 11 & 12) |Yfs| - 14 - S

VDS = -5V, ID = -4A

Diode Forward Voltage (Note 11) VSD - -0.7 -1.0 V

VGS = 0V, IS = -1A

Continuous Source Current IS - - -1.8 A -

DYNAMIC CHARACTERISTICS (Note 12)

Input Capacitance Ciss - 1610 -

pF VDS = -10V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 157 -

Reverse Transfer Capacitance Crss - 145 -

Gate Resistance R

g

- 9.45 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (Note 13) Q

g

- 8.0 -

nC

VGS = -2.5V

VDS = -10V

ID = -4A

Total Gate Charge (Note 13) Q

g

- 15.4 -

VGS = -4.5V

Gate-Source Charge (Note 13) Q

g

s - 2.5 -

Gate-Drain Charge (Note 13) Q

g

d - 3.3 -

Turn-On Delay Time (Note 13) tD

(

on

)

- 16.8 -

ns VGS = -4.5V, VDS = -10V,

RG = 6Ω , ID = -1A

Turn-On Rise Time (Note 13) t

r

- 12.4 -

Turn-Off Delay Time (Note 13) tD

(

off

)

- 94.1 -

Turn-Off Fall Time (Note 13) tf - 42.4 -

Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%

12. For design aid only, not subject to production testing.

13. Switching characteristics are independent of operating junction temperatures.

Typical Characteristics – Q2 P-CHANNEL

0 0.5 1.0 1.5 2.0

Fig. 12 Typical Output Characteristics

-V , DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

30

-I , D

R

AI

N

C

U

R

E

N

T

(A)

D

20

25

V = -1.8V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -3.5V

GS

V = -4.0V

GS

V = -4.5V

GS

V = -10V

GS

0

5

10

15

20

-I , D

R

AI

N

C

U

R

E

N

T

(A)

D

0 0.5 1 1.5 2 2.5 3

Fig. 13 Typical Transfer Characteristics

-V , GATE SOURCE VOLTAGE (V)

GS

V = -5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

ZETEX Product Line of 025w, «.20 0350?: mm. : $.20 OIDOw. ID hzmmmDU OEDOW O Fwiw «TZOMOIDO ID 950w: mm. . m \ C(50) D OIw ETC. EKG Febmary 2011 a Dmdes \ncuvpmaleﬂ

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0

0.01

0.02

0.03

0.04

0.05

0.06

0 5 10 15 20 25 30

Fig. 14 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

D

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

-V = 2.5V

GS

-V = 4.5V

GS

0 5 10 15 20

-I , DRAIN CURRENT (A)

Fig. 15 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

0

0.01

0.02

0.03

0.04

0.05

0.06

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

V = 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 16 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

-V = 4.5V

-I = 10A

GS

D

-V = 2.5V

-I = 5A

GS

D

Fig. 17 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0

0.01

0.02

0.03

0.04

0.05

0.06

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

-V = 4.5V

-I = 10A

GS

D

-V = 2.5V

-I = 5A

GS

D

Fig. 18 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.2

0.4

0.6

0.8

1.0

1.

2

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

-I = 1mA

D

-I = 250µA

D

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 19 Diode Forward Voltage vs. Current

-I , S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

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100

1,000

10,000

048121620

Fig. 20 Typical Capacitance

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

f = 1MHz

C

iss

C

oss

C

rss

0 5 10 15 20

Fig. 21 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

-V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

100,000

-I , D

R

AIN-S

O

U

R

C

E LEAKA

G

E

C

U

R

EN

T

(nA)

DSS

10,000

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

2

4

6

8

10

0 5 10 15 20 25 30 35

Q , OTAL GATE CHARGE (nC)

Fig. 22 Gate-Source Voltage vs. Total Gate Charge

g

T

-V , ATE-SOURCE VOLTAGE (V)

GS

G

V = -10V

I = -4A

DS

D

a ZEIEX — — 7 Seating Plane 4 < tc="" ”dum—="" j1ee?="" [f="" mm="" dmc2020usd="" 10mm="" document="" number="" d532121="" rev="" 4="" ,="" 2="" www.di0des.com="">

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Package Outline Dimensions

DIM Inches Millimeters DIM Inches Millimeters

Min. Max. Min. Max. Min. Max. Min. Max.

A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC

A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51

D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25

H 0.228 0.244 5.80 6.20 θ0° 8° 0° 8°

E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50

L 0.016 0.050 0.40 1.27 - - - - -

Suggested Pad Layout

h x 45°

1.52

0.060

7.0

0.275

0.6

0

.024

1.27

0.050

4.0

0.155

mm

inches

ms Product Line of ‘ ZEIEX

DMC2020USD

Document number: DS32121 Rev. 4 - 2

11 of 11

www.diodes.com February 2011

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Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMC2020USD Datasheet by Diodes Incorporated

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