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2010-2015 Microchip Technology Inc. DS20002234D-page 1
MCP1640/B/C/D
Features
• Up to 96% Typical Efficiency
• 800 mA Typical Peak Input Current Limit:
-I
OUT > 100 mA @ 1.2V VIN, 3.3V VOUT
-I
OUT > 350 mA @ 2.4V VIN, 3.3V VOUT
-I
OUT > 350 mA @ 3.3V VIN, 5.0V VOUT
• Low Start-Up Voltage: 0.65V, typical 3.3V VOUT
@ 1 mA
• Low Operating Input Voltage: 0.35V, typical
3.3VOUT @ 1 mA
• Adjustable Output Voltage Range: 2.0V to 5.5V
• Maximum Input Voltage VOUT < 5.5V
• Automatic PFM/PWM Operation (MCP1640/C):
- PFM Operation Disabled (MCP1640B/D)
- PWM Operation: 500 kHz
• Low Device Quiescent Current: 19 µA, typical
PFM Mode (not switching)
• Internal Synchronous Rectifier
• Internal Compensation
• Inrush Current Limiting and Internal Soft Start
• Selectable, Logic Controlled Shutdown States:
- True Load Disconnect Option (MCP1640/B)
- Input to Output Bypass Option (MCP1640C/D)
• Shutdown Current (All States): < 1 µA
• Low Noise, Anti-Ringing Control
• Overtemperature Protection
• Available Packages:
- 6-Lead SOT-23
- 8-Lead 2 x 3 mm DFN
Applications
• One, Two and Three Cell Alkaline and NiMH/NiCd
Portable Products
• Single-Cell Li-Ion to 5V Converters
• Li Coin Cell Powered Devices
• Personal Medical Products
• Wireless Sensors
• Handheld Instruments
• GPS Receivers
• Bluetooth Headsets
• +3.3V to +5.0V Distributed Power Supply
General Description
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, synchronous step-up DC-DC con-
verter. It provides an easy-to-use power supply solution
for applications powered by either single-cell, two-cell,
or three-cell alkaline, NiCd, NiMH, and single-cell Li-Ion
or Li-Polymer batteries.
Low-voltage technology allows the regulator to start-up
without high inrush current or output voltage overshoot
from a low 0.65V input. High efficiency is accomplished
by integrating the low resistance N-Channel Boost
switch and synchronous P-Channel switch. All
compensation and protection circuitry is integrated to
minimize the number of external components. For
standby applications, the MCP1640 consumes only
19 µA while operating at no load, and provides a true
disconnect from input to output while in Shutdown
(EN = GND). Additional device options are available by
operating in PWM-Only mode and connecting input to
output while the device is in Shutdown.
The “true” load disconnect mode provides input-to-out-
put isolation while the device is disabled by removing
the normal boost regulator diode path from input-to-
output. The Input-to-Output Bypass mode option con-
nects the input to the output using the integrated low
resistance P-Channel MOSFET, which provides a low
bias voltage for circuits operating in Deep Sleep mode.
Both options consume less than 1 µA of input current.
Output voltage is set by a small external resistor
divider. Two package options are available, 6-Lead
SOT-23 and 8-Lead 2 x 3 mm DFN.
Package Types
MCP1640
8-Lead 2 x 3 DFN*
PGND
SGND
EN
VOUTS
VOUTP
1
2
3
4
8
7
6
5SW
VIN
VFB
EP
9
4
1
2
3
6VIN
VFB
SW
GND
EN
5VOUT
MCP1640
6-Lead SOT-23
* Includes Exposed Thermal Pad (EP); see Table 3-1.
0.65V Start-Up Synchronous Boost Regulator
with True Output Disconnect or Input/Output Bypass Option
MCP1640/B/C/D
DS20002234D-page 2 2010-2015 Microchip Technology Inc.
Typical Application
Efficiency vs. IOUT for 3.3VOUT
40.0
60.0
80.0
100.0
0.1 1.0 10.0 100.0 1000.0
Output Current (mA)
Efficiency (%)
VIN = 0.8V VIN = 1.2V
VIN = 2.5V
VIN
GND
VFB
SW
VIN
0.9V to 1.7V
VOUT
3.3V @ 100 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUT
+
-
976 k
562 k
ALKALINE
VIN
PGND
VFB
SW
VIN
3.0V to 4.2V
VOUT
5.0V @ 300 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUTS
+
-
976 k
309 k
VOUTP
SGND
LI-ION
EN
EN
IN
Vom
VFE
VEN VFB
2010-2015 Microchip Technology Inc. DS20002234D-page 3
MCP1640/B/C/D
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
EN, VFB, VIN, VSW, VOUT - GND .........................+6.5V
EN, VFB ....<maximum of VOUT or VIN > (GND – 0.3V)
Output Short-Circuit Current ...................... Continuous
Output Current Bypass Mode...........................400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65°C to +150°C
Ambient Temp. with Power Applied......-40°C to +85°C
Operating Junction Temperature........-40°C to +125°C
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM.........................................................300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V,
IOUT =15mA, T
A = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Characteristics
Minimum Start-Up Voltage VIN —0.650.8 VNote 1
Minimum Input Voltage After
Start-Up VIN —0.35 — VNote 1
Output Voltage Adjust Range VOUT 2.0 5.5 VV
OUT VIN; Note 2
Maximum Output Current IOUT — 150 — mA 1.2V VIN, 2.0V VOUT
— 150 — mA 1.5V VIN, 3.3V VOUT
— 350 — mA 3.3V VIN, 5.0V VOUT
Feedback Voltage VFB 1.175 1.21 1.245 V
Feedback Input Bias Current IVFB —10 — pA
Quiescent Current – PFM
Mode IQPFM — 19 30 µA Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – PWM
Mode IQPWM — 220 — µA Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – Shutdown IQSHDN —0.72.3 µAV
OUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage INLK —0.3 — µAV
IN = VSW = 5V;
VOUT = 5.5V
VEN = VFB = GND
PMOS Switch Leakage IPLK —0.05 — µAV
IN = VSW = GND;
VOUT = 5.5V
Note 1: 3.3 k resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQOUT is measured at VOUT; VOUT is externally supplied with a voltage higher than the nominal 3.3V output
(device is not switching); no load; VIN quiescent current will vary with boost ratio. VIN quiescent current
can be estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: Peak current limit determined by characterization, not production tested.
5: 220 resistive load, 3.3VOUT (15 mA).
MCP1640/B/C/D
DS20002234D-page 4 2010-2015 Microchip Technology Inc.
NMOS Switch On Resistance RDS(ON)N —0.6 — VIN = 3.3V, ISW = 100 mA
PMOS Switch On Resistance RDS(ON)P —0.9 — VIN = 3.3V, ISW = 100 mA
NMOS Peak Switch Current
Limit IN(MAX) 600 850 — mA Note 4
VOUT Accuracy VOUT%-3 —+3 % Includes Line and Load
Regulation; VIN = 1.5V
Line Regulation VOUT/VOUT)
/VIN|-1 0.01 1%/V VIN = 1.5V to 3V
IOUT = 25 mA
Load Regulation VOUT/VOUT|-1 0.01 1%I
OUT = 25 mA to 100 mA;
VIN = 1.5V
Maximum Duty Cycle DCMAX 88 90 — %
Switching Frequency fSW 425 500 575 kHz
EN Input Logic High VIH 90 ——%of V
IN IOUT = 1 mA
EN Input Logic Low VIL ——20 %of VIN IOUT = 1 mA
EN Input Leakage Current IENLK —0.005 — µAV
EN = 5V
Soft-Start Time tSS — 750 — µS EN Low-to-High,
90% of VOUT; Note 5
Thermal Shutdown Die
Temperature TSD — 150 — C
Die Temperature Hysteresis TSDHYS —10 — C
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT =15mA.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Junction Temperature
Range TJ-40 — +125 °C Steady State
Storage Temperature Range TA-65 — +150 °C
Maximum Junction Temperature TJ— — +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 6LD-SOT-23 JA —190.5 — °C/W
Thermal Resistance, 8LD-2x3 DFN JA —75 —°C/W
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V,
IOUT =15mA, T
A = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: 3.3 k resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQOUT is measured at VOUT; VOUT is externally supplied with a voltage higher than the nominal 3.3V output
(device is not switching); no load; VIN quiescent current will vary with boost ratio. VIN quiescent current
can be estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: Peak current limit determined by characterization, not production tested.
5: 220 resistive load, 3.3VOUT (15 mA).
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2010-2015 Microchip Technology Inc. DS20002234D-page 5
MCP1640/B/C/D
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10µF, L
=4.7µH, V
OUT =3.3V, I
LOAD =15mA, T
A=+25°C.
FIGURE 2-1: VOUT IQ vs. Ambient
Temperature in PFM Mode.
FIGURE 2-2: VOUT IQ vs. Ambient
Temperature in PWM Mode.
FIGURE 2-3: Maximum IOUT vs. VIN After
Start-Up, VOUT 10% Below Regulation Point.
FIGURE 2-4: 2.0V VOUT PFM/PWM Mode
Efficiency vs. IOUT.
FIGURE 2-5: 3.3V VOUT PFM/PWM Mode
Efficiency vs. IOUT.
FIGURE 2-6: 5.0V VOUT PFM/PWM Mode
Efficiency vs. IOUT.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
-40 -25 -10 5 20 35 50 65 80
IQ PFM Mode (µA)
Ambient Temperature (°C)
VOUT = 2.0V
VOUT = 5.0V
VOUT = 3.3V
VIN = 1.2V
150
175
200
225
250
275
300
-40 -25 -10 5 20 35 50 65 80
I
Q
PWM Mode (µA)
Ambient Temperature (°C)
VOUT = 3.3V
VOUT = 5.0V
VIN = 1.2V
0
100
200
300
400
500
600
00.511.522.533.544.55
I
OUT
(mA)
VIN (V)
VOUT = 3.3V
VOUT = 2.0V
VOUT = 5.0V
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10 100 1000
Efficiency (%)
IOUT (mA)
VOUT = 2.0V
VIN = 0.8V
VIN = 1.2V
VIN = 1.6V
PWM / PFM
PWM Only
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10 100 1000
Efficiency (%)
IOUT (mA)
VOUT = 3.3V
VIN = 0.8V
VIN = 1.2V
VIN = 2.5V
PWM / PFM
PWM Only
0
10
20
30
40
50
60
70
80
90
100
0.01 0.1 1 10 100
1000
Efficiency (%)
IOUT (mA)
VOUT = 5.0V
VIN = 1.2V VIN = 1.8V
VIN = 3.6V
PWM / PFM
PWM Only
MCP1640/B/C/D
DS20002234D-page 6 2010-2015 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10µF, L
=4.7µH, V
OUT =3.3V, I
LOAD =15mA, T
A= +25°C.
FIGURE 2-7: 3.3V VOUT vs. Ambient
Temperature.
FIGURE 2-8: 3.3V VOUT vs. Ambient
Temperature.
FIGURE 2-9: 3.3V VOUT vs. VIN.
FIGURE 2-10: Minimum Start-Up and
Shutdown VIN into Resistive Load vs. IOUT.
FIGURE 2-11: FOSC vs. Ambient
Temperature.
FIGURE 2-12: PWM Pulse-Skipping Mode
Threshold vs. IOUT.
3.285
3.29
3.295
3.3
3.305
3.31
3.315
3.32
3.325
3.33
-40 -25 -10 5 20 35 50 65 80
V
OUT
(V)
Ambient Temperature (°C)
IOUT = 15 mA
VIN = 0.8V
VIN = 1.8V
VIN = 1.2V
3.26
3.28
3.30
3.32
3.34
3.36
3.38
-40 -25 -10 5 20 35 50 65 80
V
OUT
(V)
Ambient Temperature (°C)
IOUT = 15 mA
VIN = 1.5V
IOUT = 50 mA
IOUT = 5 mA
3.20
3.24
3.28
3.32
3.36
3.40
0.8 1.2 1.6 2 2.4 2.8
V
OUT
(V)
VIN (V)
TA= -40°C
IOUT = 5 mA
TA= +25°C
TA= +85°C
0.25
0.40
0.55
0.70
0.85
1.00
0 20406080100
V
IN
(V)
IOUT (mA)
Startup
Shutdown
VOUT = 3.3V
480
485
490
495
500
505
510
515
520
525
-40 -25 -10 5 20 35 50 65 80
Switching Frequency (kHz)
Ambient Temperature (°C)
VOUT = 3.3V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
012345678910
V
IN
(V)
IOUT (mA)
VOUT = 3.3V
VOUT = 5.0V
VOUT = 2.0V
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2010-2015 Microchip Technology Inc. DS20002234D-page 7
MCP1640/B/C/D
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10µF, L
=4.7µH, V
OUT =3.3V, I
LOAD =15mA, T
A=+25°C.
FIGURE 2-13: Input No Load Current vs.
VIN.
FIGURE 2-14: N-Channel and P-Channel
RDSON vs. > of VIN or VOUT.
FIGURE 2-15: Average of PFM/PWM
Threshold Current vs. VIN.
FIGURE 2-16: MCP1640 3.3V VOUT PFM
Mode Waveforms.
FIGURE 2-17: MCP1640B 3.3V VOUT
PWM Mode Waveforms.
FIGURE 2-18: MCP1640/B High Load
Waveforms.
10
100
1000
10000
0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5
I
IN
(µA)
VIN (V)
VOUT = 3.3V VOUT = 5.0V
VOUT = 2.0V
VOUT = 2.0V VOUT = 3.3V
VOUT = 5.0V
PWM / PFM
PWM Only
0
1
2
3
4
5
11.522.533.544.55
Switch Resistance (Ohms)
> VIN or VOUT
P - Channel
N - Channel
0
10
20
30
40
50
60
00.511.522.533.544.55
IOUT (mA)
VIN (V)
VOUT = 2.0V
VOUT = 3.3V VOUT = 5.0V
IOUT = 1 mA
1 µs/DIV
VOUT
20 mV/DIV
AC
Coupled
VSW
2V/DIV
IL
0.05 mA/DIV
W W W
/ ””1,” J
W WM
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WWW M/ W
MCP1640/B/C/D
DS20002234D-page 8 2010-2015 Microchip Technology Inc.
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT =C
IN =10µF, L
=4.7µH, V
OUT =3.3V, I
LOAD =15mA, T
A= +25°C.
FIGURE 2-19: 3.3V Start-Up After Enable.
FIGURE 2-20: 3.3V Start-Up when
VIN =V
ENABLE.
FIGURE 2-21: MCP1640 3.3V VOUT Load
Transient Waveforms.
FIGURE 2-22: MCP1640B 3.3V VOUT Load
Transient Waveforms.
FIGURE 2-23: MCP1640B 2.0V VOUT Load
Transient Waveforms.
FIGURE 2-24: 3.3V VOUT Line Transient
Waveforms.
VOUT
1V/DIV
VIN
1V/DIV
VEN
1V/DIV
500 µs/DIV
VOUT
1V/DIV
VIN
1V/DIV
VEN
1V/DIV
500 µs/DIV
PFM
MODE
PWM
MODE
ISTEP = 1 mA to 75 mA
VOUT
100 mV/DIV
AC
Coupled
IOUT
50 mA/DIV
100 µs/DIV
MCP1640B PWM
Mode Only
VOUT
100 mV/DIV
AC
Coupled
IOUT
50 mA/DIV
100 µs/DIV
ISTEP = 1 mA to 75 mA
MCP1640B PWM
Mode Only
100 µs/DIV
VOUT
50 mV/DIV
AC
Coupled
IOUT
50 mA/DIV
ISTEP = 1 mA to 50 mA
VSTEP from
1V to 2.5V
200 µs/DIV
VOUT
50 mV/DIV
AC
Coupled
VIN
1V/DIV
2010-2015 Microchip Technology Inc. DS20002234D-page 9
MCP1640/B/C/D
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
3.1 Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. Feedback voltage will be
1.21V typical with the output voltage in regulation.
3.2 Signal Ground Pin (SGND)
The signal ground pin is used as a return for the
integrated VREF and error amplifier. In the 2x3 DFN
package, the SGND and power ground (PGND) pins are
connected externally.
3.3 Power Ground Pin (PGND)
The power ground pin is used as a return for the
high-current N-Channel switch. In the 2x3 DFN
package, the PGND and SGND pins are connected
externally.
3.4 Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching and lower quiescent current
while disabled. A logic high (>90% of VIN) will enable
the regulator output. A logic low (<20% of VIN) will
ensure that the regulator is disabled.
3.5 Switch Node Pin (SW)
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current and can be as
high as 800 mA peak. The integrated N-Channel switch
drain and integrated P-Channel switch source are
internally connected at the SW node.
3.6 Output Voltage Power Pin (VOUTP)
The output voltage power pin connects the output
voltage to the switch node. High current flows through
the integrated P-Channel and out of this pin to the
output capacitor and the output. In the 2x3 DFN
package, VOUTP and VOUTS are connected externally.
3.7 Output Voltage Sense Pin (VOUTS)
The output voltage sense pin connects the regulated
output voltage to the internal bias circuits. In the
2x3 DFN package, the VOUTS and output voltage
power (VOUTP) pins are connected externally.
3.8 Power Supply Input Voltage Pin (V
IN
)
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a 4.7 µF
minimum capacitor.
3.9 Exposed Thermal Pad (EP)
There is no internal electrical connection between the
Exposed Thermal Pad (EP) and the SGND and PGND
pins. They must be connected to the same potential on
the Printed Circuit Board (PCB).
3.10 Ground Pin (GND)
The ground or return pin is used for circuit ground
connection. Length of trace from input cap return,
output cap return, and GND pin should be made as
short as possible to minimize noise on the GND pin. In
the SOT-23-6 package, a single ground pin is used.
3.11 Output Voltage Pin (VOUT)
The output voltage pin connects the integrated
P-Channel MOSFET to the output capacitor. The FB
voltage divider is also connected to the VOUT pin for
voltage regulation.
TABLE 3-1: PIN FUNCTION TABLE
MCP1640/B/C/D
2x3 DFN MCP1640/B/C/D
SOT-23 Symbol Description
14V
FB Feedback Voltage Pin
2—S
GND Signal Ground Pin
3—P
GND Power Ground Pin
4 3 EN Enable Control Input Pin
5 1 SW Switch Node, Boost Inductor Input Pin
6—V
OUTP Output Voltage Power Pin
7—V
OUTS Output Voltage Sense Pin
86V
IN Input Voltage Pin
9 — EP Exposed Thermal Pad (EP); must be connected to VSS
— 2 GND Ground Pin
—5V
OUT Output Voltage Pin
MCP1640/B/C/D
DS20002234D-page 10 2010-2015 Microchip Technology Inc.
NOTES:
2010-2015 Microchip Technology Inc. DS20002234D-page 11
MCP1640/B/C/D
4.0 DETAILED DESCRIPTION
4.1 Device Option Overview
The MCP1640/B/C/D family of devices is capable of
low start-up voltage and delivers high efficiency over a
wide load range for single-cell, two-cell, or three-cell
alkaline, NiCd, NiMH and single-cell Li-Ion battery
inputs. A high level of integration lowers total system
cost, eases implementation and reduces board area.
The devices feature low start-up voltage, adjustable
output voltage, PWM/PFM mode operation, low IQ,
integrated synchronous switch, internal compensation,
low noise anti-ring control, inrush current limit, and soft
start.
There are two options for the MCP1640/B/C/D family:
• PWM/PFM mode or PWM-Only mode
• “True Output Disconnect” mode or Input-to-Output
Bypass mode
4.1.1 PWM/PFM MODE OPTION
The MCP1640/C devices use an automatic switchover
from PWM to PFM mode for light load conditions to
maximize efficiency over a wide range of output
current. During PFM mode, higher peak current is used
to pump the output up to the threshold limit. While
operating in PFM or PWM mode, the P-Channel switch
is used as a synchronous rectifier, turning off when the
inductor current reaches 0 mA to maximize efficiency.
In PFM mode, a comparator is used to terminate
switching when the output voltage reaches the upper
threshold limit. Once switching has terminated, the
output voltage will decay or coast down. During this
period, very low IQ is consumed from the device and
input source, which keeps power efficiency high at light
load.
The disadvantages of PWM/PFM mode are higher out-
put ripple voltage and variable PFM mode frequency.
The PFM mode frequency is a function of input voltage,
output voltage and load. While in PFM mode, the boost
converter pumps the output up at a switching frequency
of 500 kHz.
4.1.2 PWM-ONLY MODE OPTION
The MCP1640B/D devices disable PFM mode
switching, and operate only in PWM mode over the
entire load range. During periods of light load opera-
tion, the MCP1640B/D continues to operate at a con-
stant 500 kHz switching frequency, keeping the output
ripple voltage lower than PFM mode.
During PWM-Only mode, the MCP1640B/D P-Channel
switch acts as a synchronous rectifier by turning off (to
prevent reverse current flow from the output cap back
to the input) in order to keep efficiency high.
For noise immunity, the N-Channel MOSFET current
sense is blanked for approximately 100 ns. With a typ-
ical minimum duty cycle of 100 ns, the MCP1640B/D
continues to switch at a constant frequency under light
load conditions. Figure 2-12 represents the input volt-
age versus load current for the pulse skipping threshold
in PWM-Only mode. At lighter loads, the MCP1640B/D
devices begin to skip pulses.
4.1.3 TRUE OUTPUT DISCONNECT
MODE OPTION
The MCP1640/B devices incorporate a true output
disconnect feature. With the EN pin pulled low, the
output of the MCP1640/B is isolated or disconnected
from the input by turning off the integrated P-Channel
switch and removing the switch bulk diode connection.
This removes the DC path that is typical in boost con-
verters, which allows the output to be disconnected
from the input. During this mode, less than 1 µA of cur-
rent is consumed from the input (battery). True output
disconnect does not discharge the output; the output
voltage is held up by the external COUT capacitance.
4.1.4 INPUT BYPASS MODE OPTION
The MCP1640C/D devices incorporate the Input
Bypass shutdown option. With the EN input pulled low,
the output is connected to the input using the internal
P-Channel MOSFET. In this mode, the current draw
from the input (battery) is less than 1 µA with no load.
Input Bypass mode is used when the input voltage
range is high enough for the load to operate in Sleep or
Low IQ mode. When a higher regulated output voltage
is necessary to operate the application, the EN input is
pulled high, enabling the boost converter.
TABLE 4-1: PART NUMBER SELECTION
Part
Number PWM/
PFM PWM
-Only True
Disconnect
Input
-to-
Output
Bypass
MCP1640 X X
MCP1640B X X
MCP1640C X X
MCP1640D X X
MCP1640/B/C/D
DS20002234D-page 12 2010-2015 Microchip Technology Inc.
4.2 Functional Description
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, step-up DC-DC converter that
provides an easy-to-use power supply solution for
applications powered by either single-cell, two-cell, or
three-cell alkaline, NiCd, NiMH, and single-cell Li-Ion or
Li-Polymer batteries.
Figure 4-1 depicts the functional block diagram of the
MCP1640/B/C/D.
FIGURE 4-1: MCP1640/B/C/D Block Diagram.
4.2.1 LOW-VOLTAGE START-UP
The MCP1640/B/C/D is capable of starting from a low
input voltage. Start-up voltage is typically 0.65V for a
3.3V output and 1 mA resistive load.
When enabled, the internal start-up logic turns the
rectifying P-Channel switch on until the output
capacitor is charged to a value close to the input
voltage. The rectifying switch is current-limited to
approximately 100 mA during this time. This will affect
the start-up under higher load currents, and the device
may not start to the nominal value. After charging the
output capacitor to the input voltage, the device starts
switching. If the input voltage is below 1.6V, the device
runs open-loop with a fixed duty cycle of 70% until the
output reaches 1.6V. During this time, the boost switch
current is limited to 50% of its nominal value. Once the
output voltage reaches 1.6V, normal closed-loop PWM
operation is initiated.
The MCP1640/B/C/D charges an internal capacitor
with a very weak current source. The voltage on this
capacitor, in turn, slowly ramps the current limit of the
boost switch to its nominal value. The soft-start
capacitor is completely discharged in the event of a
commanded shutdown or a thermal shutdown.
There is no undervoltage lockout feature for the
MCP1640/B/C/D. The device will start-up at the lowest
possible voltage and run down to the lowest possible
voltage. For typical battery applications, this may result
in “motor-boating” (emitting a low-frequency tone) for
deeply discharged batteries.
Gate Drive
and
Shutdown
Control
Logic
VIN
EN
VOUT
GND
ISENSE
IZERO
ILIMIT
.3V
0V
Soft Start
Direction
Control
Oscillator Slope
Comp. S
PWM/PFM
Logic
1.21V
Internal
Bias
SW
FB
EA
2010-2015 Microchip Technology Inc. DS20002234D-page 13
MCP1640/B/C/D
4.2.2 PWM-ONLY MODE OPERATION
In normal PWM operation, the MCP1640/B/C/D
operates as a fixed frequency, synchronous boost
converter. The switching frequency is internally
maintained with a precision oscillator typically set to
500 kHz. The MCP1640B/D devices will operate in
PWM-Only mode even during periods of light load
operation. By operating in PWM-Only mode, the output
ripple remains low and the frequency is constant.
Operating in fixed PWM mode results in lower
efficiency during light load operation (when compared
to PFM mode (MCP1640/C)).
Lossless current sensing converts the peak current sig-
nal to a voltage to sum with the internal slope compen-
sation. This summed signal is compared to the voltage
error amplifier output to provide a peak current control
command for the PWM signal. The slope
compensation is adaptive to the input and output
voltage. Therefore, the converter provides the proper
amount of slope compensation to ensure stability, but is
not excessive, which causes a loss of phase margin.
The peak current limit is set to 800 mA typical.
4.2.3 PFM MODE OPERATION
The MCP1640/C devices are capable of operating in
normal PWM mode and PFM mode to maintain high
efficiency at all loads. In PFM mode, the output ripple
has a variable frequency component that changes with
the input voltage and output current. The value of the
output capacitor changes the low-frequency compo-
nent ripple. Output ripple peak-to-peak values are not
affected by the output capacitor. With no load, the qui-
escent current draw from the output is typically 19 µA.
This is not a switching current and is not dependent on
the input and output parameters. The no-load input cur-
rent drawn from the battery depends on the above
parameters. Its variation is shown in Figure 2-13. The
PFM mode can be disabled in selected device options.
PFM operation is initiated if the output load current falls
below an internally programmed threshold. The output
voltage is continuously monitored. When the output
voltage drops below its nominal value, PFM operation
pulses one or several times to bring the output back
into regulation. If the output load current rises above
the upper threshold, the MCP1640/C transitions
smoothly into PWM mode.
4.2.4 ADJUSTABLE OUTPUT VOLTAGE
The MCP1640/B/C/D output voltage is adjustable with
a resistor divider over a 2.0V minimum to 5.5V
maximum range. High-value resistors can be used to
minimize quiescent current to keep efficiency high at
light loads.
4.2.5 ENABLE PIN
The enable pin is used to turn the boost converter on
and off. The enable threshold voltage varies with input
voltage. To enable the boost converter, the EN voltage
level must be greater than 90% of the VIN voltage. To
disable the boost converter, the EN voltage must be
less than 20% of the VIN voltage.
4.2.6 INTERNAL BIAS
The MCP1640/B/C/D gets its start-up bias from VIN.
Once the output exceeds the input, bias comes from
the output. Therefore, once started, operation is
completely independent of VIN. Operation is only
limited by the output power level and the input source
series resistance. When started, the output will remain
in regulation down to 0.35V typical with 1 mA output
current for low source impedance inputs.
4.2.7 INTERNAL COMPENSATION
The error amplifier, with its associated compensation
network, completes the closed-loop system by
comparing the output voltage to a reference at the
input of the error amplifier, and feeding the amplified
and inverted signal to the control input of the inner
current loop. The compensation network provides
phase leads and lags at appropriate frequencies to
cancel excessive phase lags and leads of the power
circuit. All necessary compensation components and
slope compensation are integrated.
4.2.8 SHORT CIRCUIT PROTECTION
Unlike most boost converters, the MCP1640/B/C/D
allows its output to be shorted during normal operation.
The internal current limit and overtemperature
protection limit excessive stress and protect the device
during periods of short circuit, overcurrent and over-
temperature. While operating in Bypass mode, the
P-Channel current limit is inhibited to minimize
quiescent current.
4.2.9 LOW NOISE OPERATION
The MCP1640/B/C/D integrates a low noise anti-ring
switch that damps the oscillations typically observed at
the switch node of a boost converter when operating in
the Discontinuous Inductor Current mode. This
removes the high-frequency radiated noise.
4.2.10 OVERTEMPERATURE
PROTECTION
Overtemperature protection circuitry is integrated into
the MCP1640/B/C/D. This circuitry monitors the device
junction temperature and shuts the device off if the
junction temperature exceeds the typical +150°C
threshold. If this threshold is exceeded, the device will
automatically restart when the junction temperature
drops by 10°C. The soft start is reset during an
overtemperature condition.
MCP1640/B/C/D
DS20002234D-page 14 2010-2015 Microchip Technology Inc.
NOTES:
2010-2015 Microchip Technology Inc. DS20002234D-page 15
MCP1640/B/C/D
5.0 APPLICATION INFORMATION
5.1 Typical Applications
The MCP1640/B/C/D synchronous boost regulator
operates over a wide input and output voltage range.
The power efficiency is high for several decades of load
range. Output current capability increases with input
voltage and decreases with increasing output voltage.
The maximum output current is based on the
N-Channel peak current limit. Typical characterization
curves in this data sheet are presented to display the
typical output current capability.
5.2 Adjustable Output Voltage
Calculations and
Maximum Output Current
To calculate the resistor divider values for the
MCP1640/B/C/D, the following equation can be used,
where RTOP is connected to VOUT, RBOT is connected
to GND and both are connected to the FB input pin.
EQUATION 5-1:
EXAMPLE 1:
EXAMPLE 2:
The internal error amplifier is of transconductance type; its
gain is not related to the resistors' value. There are some
potential issues with higher-value resistors. For small
surface-mount resistors, environment contamination can
create leakage paths that significantly change the resistor
divider ratio and modify the output voltage tolerance.
Smaller feedback resistor values will increase the
current drained from the battery by a few µA, but will
result in good regulation over the entire temperature
range and environment conditions. The feedback input
leakage current can also impact the divider and change
the output voltage tolerance.
For boost converters, the removal of the feedback
resistors during operation must be avoided. In this
case, the output voltage will increase above the
absolute maximum output limits of the MCP1640/B/C/D
and damage the device.
The maximum device output current is dependent upon
the input and output voltage. For example, to ensure a
100 mA load current for VOUT = 3.3V, a minimum of
1.0-1.1V input voltage is necessary. If an application is
powered by one Li-Ion battery (VIN from 3.0V to 4.2V),
the minimum load current the MCP1640/B/C/D can
deliver is close to 300 mA at 5.0V output and a
maximum of 500 mA (Figure 2-3).
5.2.1 VIN >V
OUT SITUATION
For VIN >V
OUT, the output voltage will not remain in
regulation. VIN >V
OUT is an unusual situation for a
boost converter, and there is a common issue when
two Alkaline cells (2 x 1.6V typical) are used to boost to
3.0V output. The Input-to-Output Bypass option is
recommended to be used in this situation until the
batteries’ voltages go down to a safe headroom. A
minimum headroom of approximately 150 to 200 mV
between VOUT and VIN must be ensured, unless a low-
frequency, high-amplitude output ripple on VOUT is
expected. The ripple and its frequency is VIN and load
dependent. The higher the VIN, the higher the ripple
and the lower its frequency.
5.3 Input Capacitor Selection
The boost input current is smoothed by the boost induc-
tor reducing the amount of filtering necessary at the
input. Some capacitance is recommended to provide
decoupling from the source. Low ESR X5R or X7R are
well suited since they have a low temperature coefficient
and small size. For most applications, 4.7 µF of capaci-
tance is sufficient at the input. For high-power applica-
tions that have high source impedance or long leads,
connecting the battery to the input 10 µF of capacitance
is recommended. Additional input capacitance can be
added to provide a stable input voltage.
Table 5-1 contains the recommended range for the
input capacitor value.
5.4 Output Capacitor Selection
The output capacitor helps provide a stable output
voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this appli-
cation. Using other capacitor types (aluminum or tanta-
lum) with large ESR has an impact on the converter's
efficiency and maximum output power (see AN1337).
VOUT =3.3V
VFB =1.21V
RBOT = 309 k
RTOP = 533.7 k (Standard Value = 536 k)
VOUT =5.0V
VFB = 1.21V
RBOT =309k
RTOP =967.9k (Standard Value = 976 k)
RTOP RBOT
VOUT
VFB
---------------- 1–
=
MCP1640/B/C/D
DS20002234D-page 16 2010-2015 Microchip Technology Inc.
The MCP1640/B/C/D is internally compensated, so
output capacitance range is limited (see Table 5-1 for
the recommended output capacitor range). An output
capacitance higher than 10 µF adds a better load-step
response and high-frequency noise attenuation, espe-
cially while stepping from light current loads (PFM
mode) to heavy current loads (PWM mode). Over-
shoots and undershoots during pulse load application
are reduced by adding a zero in the compensation
loop. A small capacitance (for example 100 pF) in par-
allel with an upper feedback resistor will reduce output
spikes, especially in PFM mode.
While the N-Channel switch is on, the output current is
supplied by the output capacitor COUT. The amount of
output capacitance and equivalent series resistance
will have a significant effect on the output ripple
voltage. While COUT provides load current, a voltage
drop also appears across its internal ESR that results
in ripple voltage.
EQUATION 5-2:
Table 5-1 contains the recommended range for the
input and output capacitor value.
5.5 Inductor Selection
The MCP1640/B/C/D is designed to be used with small
surface-mount inductors; the inductance value can
range from 2.2 µH to 10 µH. An inductance value of
4.7 µH is recommended to achieve a good balance
between inductor size, converter load transient
response and minimized noise.
Several parameters are used to select the correct
inductor: maximum rated current, saturation current
and copper resistance (ESR). For boost converters, the
inductor current is much higher than the output current;
the average of the inductor current is equal to the input
current drawn from the input. The lower the inductor
ESR, the higher the efficiency of the converter. This is
a common trade-off in size versus efficiency.
Peak current is the maximum or the limit, and
saturation current typically specifies a point at which
the inductance has rolled off a percentage of the rated
value. This can range from a 20% to 40% reduction in
inductance. As inductance rolls off, the inductor ripple
current increases; as does the peak switch current. It is
important to keep the inductance from rolling off too
much, causing switch current to reach the peak limit.
TABLE 5-1: CAPACITOR VALUE RANGE
CIN COUT
Min. 4.7 µF 10 µF
Max. — 100 µF
IOUT COUT dV
dt
-------
=
Where:
dV = ripple voltage
dt = On time of the N-Channel switch
(D x 1/FSW)
TABLE 5-2: MCP1640/B/C/D
RECOMMENDED INDUCTORS
Part Number
Value
(µH)
DCR
(typ.)
ISAT
(A)
Size
WxLxH
(mm)
Coilcraft
EPL2014-472 4.7 0.23 1.06 2.0x2.0x1.4
EPL3012-472 4.7 0.165 1.1 3.0x3.0x1.3
MSS4020-472 4.7 0.115 1.5 4.0x4.0x2.0
LPS6225-472 4.7 0.065 3.2 6.0x6.0x2.4
Coiltronics®
SD3110 4.7 0.285 0.68 3.1x3.1x1.0
SD3112 4.7 0.246 0.80 3.1x3.1x1.2
SD3114 4.7 0.251 1.14 3.1x3.1x1.4
SD3118 4.7 0.162 1.31 3.8x3.8x1.2
SD3812 4.7 0.256 1.13 3.8x3.8x1.2
SD25 4.7 0.0467 1.83 5.0x5.0x2.5
Würth Elektronik®
WE-TPC Type TH 4.7 0.200 0.8 2.8x2.8x1.35
WE-TPC Type S 4.7 0.105 0.90 3.8x3.8x1.65
WE-TPC Type M 4.7 0.082 1.65 4.8x4.8x1.8
WE-TPC Type X 4.7 0.046 2.00 6.8x6.8x2.3
Sumida Corporation
CMH23 4.7 0.537 0.70 2.3x2.3x1.0
CMD4D06 4.7 0.216 0.75 3.5x4.3x0.8
CDRH4D 4.7 0.09 0.800 4.6x4.6x1.5
TDK-EPCOS
B82462A2472M000 4.7 0.084 2.00 6.0x6.0x2.5
B82462G4472M 4.7 0.04 1.8 6.3x6.3x3.0
2010-2015 Microchip Technology Inc. DS20002234D-page 17
MCP1640/B/C/D
5.6 Thermal Calculations
The MCP1640/B/C/D is available in two different
packages: 6-Lead SOT-23 and 8-Lead 2 x 3 DFN. The
junction temperature is estimated by calculating the
power dissipation and applying the package thermal
resistance (JA). The maximum continuous junction
temperature rating for the MCP1640/B/C/D is +125°C.
To quickly estimate the internal power dissipation for
the switching boost regulator, an empirical calculation
using measured efficiency can be used. Given the
measured efficiency, the internal power dissipation is
estimated by Equation 5-3.
EQUATION 5-3:
The difference between the first term – input power,
and the second term – power delivered, is the internal
MCP1640/B/C/D power dissipation. This is an
estimate, assuming that most of the power lost is
internal to the MCP1640/B/C/D and not CIN, COUT and
the inductor. There is some percentage of power lost in
the boost inductor, with very little loss in the input and
output capacitors. For a more accurate estimation of
internal power dissipation, subtract the IINRMS2xL
ESR
power dissipation.
5.7 PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry, and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors be placed as close as possible to
the MCP1640/B/C/D to minimize the loop area.
The feedback resistors and feedback signal should be
routed away from the switching node and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
FIGURE 5-1: MCP1640/B/C/D SOT-23-6 Recommended Layout.
VOUT IOUT
Efficiency
-------------------------------------
VOUT IOUT
–PDis
=
COUT
LCIN
+VIN
GND
GND
+VOUT
Via to GND Plane
MCP1640
Via for Enable
RTOP
RBOT
1
\\\\\\\\\\\\
\
MCP1640/B/C/D
DS20002234D-page 18 2010-2015 Microchip Technology Inc.
FIGURE 5-2: MCP1640/B/C/D DFN-8 Recommended Layout.
COUT
L
CIN
+VIN
GND
+VOUT
MCP1640
Enable
RTOP
RBOT
GND
Wired on Bottom
Plane
1
2010-2015 Microchip Technology Inc. DS20002234D-page 19
MCP1640/B/C/D
6.0 TYPICAL APPLICATION CIRCUITS
FIGURE 6-1: Manganese Lithium Coin Cell Application Using Bypass Mode.
FIGURE 6-2: USB On-The-Go Powered by Li-Ion.
VIN
GND
VFB
SW
VOUT
5.0V @ 5 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUT
976 k
309 k
EN
Manganese Lithium
Dioxide Button Cell
2.0V to 3.2V +
-
From PIC® MCU I/O
Note: For applications that can operate directly from the battery input voltage during Sleep mode and
require a higher voltage during Normal Run mode, the MCP1640C device provides Input to
Output Bypass when disabled. The PIC® microcontroller is powered by the output of the
MCP1640C. One of its I/O pins is used to enable and disable the MCP1640C. While operating
in Sleep mode, the MCP1640C input quiescent current is typically less than 1 µA.
VIN
PGND
VFB
SW
VIN
3.3V To 4.2V
VOUT
5.0V @ 350 mA
COUT
10 µF
CIN
10 µF
L1
10 µH
VOUTS
+
-
976 k
309 k
VOUTP
SGND
LI-ION
EN
MCP1640/B/C/D
DS20002234D-page 20 2010-2015 Microchip Technology Inc.
NOTES:
Man 1
NNN
2010-2015 Microchip Technology Inc. DS20002234D-page 21
MCP1640/B/C/D
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
Example
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
6-Lead SOT-23 Example
8-Lead DFN
Part Number Code
MCP1640T-I/CHY BZNN
MCP1640BT-I/CHY BWNN
MCP1640CT-I/CHY BXNN
MCP1640DT-I/CHY BYNN
BZ25
Part Number Code
MCP1640-I/MC AHM
MCP1640T-I/MC AHM
MCP1640B-I/MC AHP
MCP1640BT-I/MC AHP
MCP1640C-I/MC AHQ
MCP1640CT-I/MC AHQ
MCP1640D-I/MC AHR
MCP1640DT-I/MC AHR
AHM
340
25
}
LE
j I
[L
f
¢ 4
MCP1640/B/C/D
DS20002234D-page 22 2010-2015 Microchip Technology Inc.
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 6
Pitch e 0.95 BSC
Outside Lead Pitch e1 1.90 BSC
Overall Height A 0.90 – 1.45
Molded Package Thickness A2 0.89 – 1.30
Standoff A1 0.00 – 0.15
Overall Width E 2.20 – 3.20
Molded Package Width E1 1.30 – 1.80
Overall Length D 2.70 – 3.10
Foot Length L 0.10 – 0.60
Footprint L1 0.35 – 0.80
Foot Angle I0° – 30°
Lead Thickness c 0.08 – 0.26
Lead Width b 0.20 – 0.51
b
E
4
N
E1
PIN 1 ID BY
LASER MARK
D
123
e
e1
A
A1
A2 c
L
L1
φ
Microchip Technology Drawing C04-028B
S‘LKg
SCREEN
——m————-<—— gx="" e="" recommended="" land="" pattern="" units="" m‘llimeters="" dimensmn="" meils="" nhn="" \="" nom="" \="" max="" comact="" pi|ch="" e="" 0.95="" 550="" camact="" pad="" spacing="" c="" 2.50="" contact="" pad="" wid1h(=""><6) x="" o="" 60="" cumam="" pad="" length="" (x6)="" v="" 1.10="" sttance="" between="" pads="" g="" 1="" 70="" dwstance="" between="" pads="" ex="" 0="" 35="" overal‘="" wldlh="" z="" 3="" 90="" notes="" 1.="" dwmenswomng="" and="" mlerancmg="" perasme="" y14.5m="" bsc:="" baswc="" dwmension.="" theareticahy="" exact="" va‘ue="" shown="" without="" tolerances.="" chrochlp="" tecnnmogy="" drawing="" no="" c0472028a=""> 2010-2015 Microchip Technology Inc. DS20002234D-page 23
MCP1640/B/C/D
6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
N1234
MCP1640/B/C/D
DS20002234D-page 24 2010-2015 Microchip Technology Inc.
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12
EXPOSED PAD
NOTE 1
21
D2
K
L
E2
N
e
b
A3 A1
A
NOTE 2
BOTTOM VIEW
TOP VIEW
* @;@
8-Lead Plastic Dual Flat, No Lead Package (MC) - 2x3x0.9mm Body [DFN]
01 T2
F,
!
-|
|_t
m
S
S
S
StLK SCREEN
RECOMMENDED LAND PATTERN
Umts MILLtMETERS
Dtmenslon Ltmtts MIN \ NOM \ MAX
Contact Pttcn E u 50 BSC
Opttonat Center Pad Wldlh W2 1 45
Opttonat Center Pad Lengtn T2 1 75
Contact Pad Spactng C1 2.90
Contact Pad Width (X8) X1 0 30
Contact Pad Lengtn (X3) Vt 0.75
Distance Between Pads G 0.20
Notes.
t Dimenstontng and tolerancing per ASME v14 SM
880 Basic Dtmenston. Theorettcatly exacl value shown wtthout mterances.
Microcntp Technology Drawtrtg No. (304721238
2010-2015 Microchip Technology Inc. DS20002234D-page 25
MCP1640/B/C/D
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
MCP1640/B/C/D
DS20002234D-page 26 2010-2015 Microchip Technology Inc.
NOTES:
2010-2015 Microchip Technology Inc. DS20002234D-page 27
MCP1640/B/C/D
APPENDIX A: REVISION HISTORY
Revision D (September 2015)
The following is the list of modifications:
1. Deleted maximum values for NMOS Switch
Leakage and PMOS Switch Leakage parame-
ters in DC Characteristics table.
2. Updated Figure 2-15 in Section 2.0 “Typical
Performance Curves”.
3. Minor typographical corrections.
Revision C (November 2014)
The following is the list of modifications:
1. Updated Features list.
2. Updated values in the DC Characteristics and
Temperature Specifications tables.
3. Updated Figures 2-6 and 2-15.
4. Updated Section 4.2.1 “Low-Voltage Start-
Up”.
5. Updated Section 5.2 “Adjustable Output
Voltage Calculations and Maximum Output
Current”.
6. Updated Section 5.4 “Output Capacitor
Selection”.
7. Updated markings and SOT-23 package specifi-
cation drawings for CHY designator in
Section 7.0 “Packaging Information”.
8. Minor editorial corrections.
Revision B (March 2011)
The following is the list of modifications:
1. Updated Table 5-2.
2. Added the package markings tables in
Section 7.0 “Packaging Information”.
Revision A (February 2010)
Original release of this document.
MCP1640/B/C/D
DS20002234D-page 28 2010-2015 Microchip Technology Inc.
NOTES:
PART NO.
Br]
IXX
2010-2015 Microchip Technology Inc. DS20002234D-page 29
MCP1640/B/C/D
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
a) MCP1640-I/MC: 0.65V, PWM/PFM
True Disconnect
Sync Reg.,
8LD-DFN pkg.
b) MCP1640T-I/MC: 0.65V, PWM/PFM
True Disconnect
Sync Reg.,
8LD-DFN pkg.
Tape and Reel
c) MCP1640B-I/MC: 0.65V, PWM-Only
True Disconnect
Sync Reg.,
8LD-DFN pkg.
d) MCP1640BT-I/MC: 0.65V, PWM-Only
True Disconnect
Sync Reg.,
8LD-DFN pkg.
Tape and Reel
e) MCP1640C-I/MC: 0.65V, PWM/PFM
Input-to-Output Bypass
Sync Reg.,
8LD-DFN pkg.
f) MCP1640CT-I/MC: 0.65V, PWM/PFM
Input-to-Output Bypass
Sync Reg.,
8LD-DFN pkg.
Tape and Reel
g) MCP1640D-I/MC: 0.65V, PWM-Only
Input-to-Output Bypass
Sync Reg.,
8LD-DFN pkg.
h) MCP1640DT-I/MC: 0.65V, PWM-Only
Input-to-Output Bypass
Sync Reg.,
8LD-DFN pkg.
Tape and Reel
i) MCP1640T-I/CHY: 0.65V, PWM/PFM
True Disconnect
Sync Reg.,
6LD SOT-23 pkg.
Tape and Reel
j) MCP1640BT-I/CHY: 0.65V, PWM-Only
True Disconnect
Sync Reg.,
6LD SOT-23 pkg.
Tape and Reel
k) MCP1640CT-I/CHY: 0.65V, PWM/PFM
Input-to-Output Bypass
Sync Reg.,
6LD SOT-23 pkg.
Tape and Reel
l) MCP1640DT-I/CHY: 0.65V, PWM-Only
Input-to-Output Bypass
Sync Reg.,
6LD SOT-23 pkg.
Tape and Reel
PART NO. X/XX
PackageTemperature
Range
Device
Device MCP1640: 0.65V, PWM/PFM True Disconnect,
Sync Boost Regulator
MCP1640B: 0.65V, PWM Only True Disconnect,
Sync Boost Regulator
MCP1640C: 0.65V, PWM/PFM Input to Output Bypass,
Sync Boost Regulator
MCP1640D: 0.65V, PWM Only Input to Output Bypass,
Sync Boost Regulator
Tape and Reel Option T = Tape and Reel (1)
blank = DFN only
Temperature Range I = -40C to +85C (Industrial)
Package CHY* =Plastic Small Outline Transistor (SOT-23), 6-lead
MC =Plastic Dual Flat, No Lead (2x3 DFN), 8-lead
*Y = Nickel palladium gold manufacturing designator.
[X](1)
Tape
and Reel
Note 1: Tape and Reel identifier only appears in the
catalog part number description. This identi-
fier is used for ordering purposes and is not
printed on the device package. Check with
your Microchip Sales Office for package
availability with the Tape and Reel option.
MCP1640/B/C/D
DS20002234D-page 30 2010-2015 Microchip Technology Inc.
NOTES:
YSTEM
2010-2015 Microchip Technology Inc. DS20002234D-page 31
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O,
Total Endurance, TSHARC, USBCheck, VariSense,
ViewSpan, WiperLock, Wireless DNA, and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2010-2015, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-63277-829-1
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
6‘
‘MICRDCHIP
DS20002234D-page 32 2010-2015 Microchip Technology Inc.
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