CC1190 Datasheet by Texas Instruments

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I TEXAS INSTRUMENTS é é é E )/ M E $% \7 F 42—. \K gm
LNA_OUT
PA_IN
PA_OUT
HGM
BIAS
PA_EN
LNA_EN
PREAMP
ENEN
LNA
EN
LOGIC
BIAS
LNA_IN
VDD_PA1VDD_LNA
TR_SW
PA
VDD_PA2
CC1190
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SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
850 – 950 MHz RF Front End
Check for Samples: CC1190
1FEATURES APPLICATIONS
• 850 - 950 MHz ISM Bands Wireless Systems
• Seamless Interface to Sub-1 GHz Low Power
RF Devices from Texas Instruments • Wireless Sensor Networks
• Wireless Industrial Systems
• Up to 27 dBm (0.5 W) Output Power • IEEE 802.15.4 Systems
• 6 dB Typical Sensitivity Improvement with • Wireless Consumer Systems
CC11xx and CC430
• Wireless Metering (AMR/AMI) Systems
• Few External Components • Smart Grid Wireless Networks
– Integrated PA
– Integrated LNA DESCRIPTION
– Integrated Switches CC1190 is a cost-effective and high-performance RF
– Integrated Matching Network Front End for low-power and low-voltage wireless
– Integrated Inductors applications at 850 - 950 MHz.
• Digital Control of LNA and PA Gain by HGM CC1190 is a range extender for the sub-1 GHz
Pin low-power RF transceivers, transmitters, and
• 50-nA in Power Down (LNA_EN = PA_EN = 0) System-on-Chip devices from Texas Instruments.
• High Transmit Power Efficiency CC1190 integrates a power amplifier (PA), a
– PAE = 50% at 26 dBm Output Power low-noise amplifier (LNA), switches, and RF matching
for the design of a high-performance wireless
• Low Receive Current Consumption systems.
– 3 mA for High Gain Mode CC1190 increases the link budget by providing a
– 26 µA for Low Gain Mode power amplifier for increased output power, and an
• 2.9 dB LNA Noise Figure, Including Switch and LNA with low noise figure for improved receiver
External Antenna Match sensitivity.
• RoHS Compliant 4-mm × 4-mm QFN-16 CC1190 provides an efficient and easy-to-use range
Package extender in a compact 4-mm × 4-mm QFN-16
• 2 V to 3.7 V Operation package.
CC1190 BLOCK DIAGRAM
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
l TEXAS INSTRUMENTS
CC1190
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
DEVICE TEMPERATURE PACKAGE(1) TRANSPORTION MEDIA
CC1190RGVR Tape and Reel, 2500
-40°C to 85°C QFN (RVG) 16
CC1190RGVT Tape and Reel, 250
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values
may cause permanent damage to the device.
VALUE UNIT
Supply voltage, VDD All supply pins must have the same voltage –0.3 to 3.8 V
Voltage on any digital pin –0.3 to VDD + 0.3, max 3.8 V
Input RF level 10 dBm
Storage temperature range –50 to 150 °C
Human-body model, non RF pins 2000 V
Human-body model, RF pins: PA_IN, PA_OUT, TR_SW,
ESD 1500 V
LNA_IN, LNA_OUT
Charged device model 1000 V
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
Ambient temperature range –40 85 °C
Operating supply voltage 2 3.7 V
Operating frequency range 850 950 MHz
ELECTRICAL CHARACTERISTICS
TC= 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external
matching components optimized for 915 MHz operation.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PIN = -40 dBm, HGM = 1 3 mA
Receive current PIN = -40 dBm, HGM = 0 26 µA
PIN = 5 dBm, POUT = 26.5 dBm, HGM = 1 302
Transmit current No input signal, HGM = 1 56 mA
No input signal, HGM = 0 29
Power down current LNA_EN = PA_EN = 0 50 200 nA
High input level (control pins) HGM, LNA_EN, PA_EN 1.3 VDD V
Low input level (control pins) HGM, LNA_EN, PA_EN 0.3 V
Power down →Receive mode, switching 300 ns
time
Power down →Transmit mode, switching 600 ns
time
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SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
ELECTRICAL CHARACTERISTICS (continued)
TC= 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external
matching components optimized for 915 MHz operation.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RF Receive
PIN = -40 dBm, HGM = 1 11.6
Gain dB
PIN = -40 dBm, HGM = 0 -6
Gain variation over frequency 850–950 MHz, PIN = -40 dBm, HGM = 1 1.2 dB
Gain variation over power supply 2 – 3.7 V, PIN = -40 dBm, HGM = 1 1 dB
HGM = 1, including internal switch and external 2.9 dB
antenna match
Noise figure HGM = 0, including internal switch and external 6.2 dBm
antenna match
HGM = 1 -12.3
Input 1 dB compression dBm
HGM = 0 11.2
Input IP3, High Gain Mode HGM = 1 -5 dBm
Input reflection coefficient, S11, High HGM = 1, measured at antenna port, depends -11.5 dB
Gain Mode on external antenna and LNA match
RF Transmit
PIN = -20 dBm, HGM = 1 27.9
Gain dB
PIN = -20 dBm, HGM = 0 24.6
Maximum Output Power PIN = 5 dBm, HGM = 1, VDD = 3.7 V 27.7 dBm
PIN = 5 dBm, HGM = 1 26.5
Output power, POUT PIN = 0 dBm, HGM = 1 25.5 dBm
PIN = -6 dBm, HGM = 1 22
Power Added Efficiency, PAE PIN = 5 dBm, HGM = 1 48%
HGM = 1 24
Output 1 dB compression dBm
HGM = 0 23.7
Output power variation over frequency 850 – 950 MHz, PIN = 5 dBm, HGM = 1 1.7 dB
Output power variation over power supply 2 V – 3.7 V, PIN = 5 dBm, HGM = 1 4.5 dB
Output power variation over temperature -40°C – 85°C, PIN = 5 dBm, HGM = 1 1 dB
2nd harmonic power HGM = 1, PIN = 5 dBm 2.5
See application note AN001 (SWRA090) for dBm
3rd harmonic power -37
regulatory requirements.
HGM = 1, measured at SMA connector on
Input reflection coefficient, S11 -10 dB
PA_IN/LNA_OUT (TX active)
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‘5‘ TEXAS INSTRUMENTS
GND
PA_IN
LNA_OUT
GND
LNA_IN
HGM
LNA_EN
PA_EN
GND
PA_OUT
GND
TR_SW
VDD_PA2
BIAS
VDD_LNA
1
2
3
4
12
11
10
9
5 6 7 8
16 15 14 13
4x4QFN-16
VDD_PA1
CC1190
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
www.ti.com
DEVICE INFORMATION
QFN-16 PACKAGE
TOP VIEW
NOTE
The exposed die attach pad must be connected to a solid ground plane as this is the
primary ground connection for the chip. Inductance in vias to the pad should be
minimized. Following the CC1190EM reference layout is recommended. Changes will alter
the performance. Also see the PCB land pattern information in this data sheet.
PIN FUNCTIONS
PIN I/O DESCRIPTION
NO. NAME
The exposed die attach pad must be connected to a solid ground plane. See CC1190EM
- GND Ground (SWRR064) reference design for recommended layout.
1 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
2 PA_OUT RF Output of PA.
3 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
4 TR_SW RF RXTX switch pin.
5 LAN_IN RF Input of LNA.
Digital control pin.
6 HGM Digital Input HGM = 1 →Device in High Gain Mode.
HGM = 0 →Device in Low Gain Mode.
7 LNA_EN Digital Input Digital control pin. See Table 2 and Table 3 for details.
8 PA_EN Digital Input Digital control pin. See Table 2 and Table 3 for details.
9 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
10 LNA_OUT RF Output of LNA.
11 PA_IN RF Input of PA.
12 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer.
13 VDD_LNA Power 2 – 3.7 V Supply Voltage.
14 BIAS Analog Biasing input. Resistor between this node and ground sets bias current.
15 VDD_PA2 Power 2 – 3.7 V Supply Voltage.
16 VDD_PA1 Power 2 – 3.7 V Supply Voltage.
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‘5‘ TEXAS INSTRUMENTS 0 y:@ i6 O 4%
PA_EN
LNA_EN
CC1190
PA_EN
LNA_EN
HGM
BIAS
VDD
TR_SW
LNA_OUT
PA_OUT
PA_IN
LNA_IN
VDD_LNA
VDD_PA1
VDD_PA2
SMA
SMA
HGM
L21
C21
L22
C24
C25
L23L24
C101
C111
R141
C22
C51
VDD
C28
CC1190
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SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
CC1190EM Evaluation Module
Figure 1. CC1190EM Evaluation Module
Table 1. List of Materials Optimized for 915 MHz Operation
(See the CC1190EM Reference Design, SWRR064)
DEVICE FUNCTION VALUE
L21 PA load inductor 10 nH, LQW18AN10NG10 from Murata
L22 RXTX switch and LNA match 7.5 nH, LQW15AN7N5G00 from Murata
L23 Part of antenna match 2.2 nH, LQW15AN2N2C10D from Murata
L24 Part of antenna match 3.9 nH, LQW15AN3N9C00 from Murata
C21 DC block 47 pF, GRM1555C1H470JZ01D from Murata
C22 RXTX switch and LNA match 12 pF, GRM1555C1H120JZ01D from Murata
C24 Part of antenna match 3.3 pF: GRM1555C1H3R3CZ01D from Murata
C25 Part of antenna match 8.2 pF: GRM1555C1H8R2CZ01D from Murata
C28 Part of antenna match 0.5 pF, GRM1555C1HR50CZ01D from Murata
C51 Part of LNA match 12 pF, GRM1555C1H120JZ01D from Murata
C101 DC block 47 pF: GRM1555C1H470JZ01D from Murata
C111 DC block 47 pF: GRM1555C1H470JZ01D from Murata
R141 Bias resistor 3.3 kΩ, RK73H1ETTP3301F from Koa
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‘5‘ TEXAS INSTRUMENTS mu. £5 20.. mu . so: :_ 55 «2.. /T'\\_/‘ monk” ’ * H mum :zo-co 31-“ 51min mi m... 55 Eu; «E. EEG «E . .525 Pin >dEm
Frequency-MHz
11.5
10.9
10.5
10.7
870
NoiseFigureinHGM-dB
LNA GaininHGM-dB
NF
11.7
11.3
11.1
3.05
2.90
2.80
2.85
3.10
3.00
2.95
850 880 910860 890 930900 940 950920
GAIN
Temperature- C
o
-5.2
-5.8
-6.6
-6
-20
HGMGain -dB
LGMGain-dB
-5
-5.4
-5.6
12.0
10.5
12.5
11.5
11.0
-40 -10 20-30 0 6010 80 9050
-6.2
-6.4
30 40 70
HGMGAIN
LGMGAIN
SupplyVoltage-V
HGMGain -dB
LGMGain-dB
2 2.4 2.82.2 2.6 3.63.23 3.4
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
12.0
-6.2
-6.15
-6.1
-6.05
-6
-5.95
-5.9
-5.85
-5.8
HGMGAIN
LGMGAIN
Frequency(850MHzto950MHz)
S(1,1)
-20
-10
0
10
20
30
40
50
60
-40 -35 -30 -25 -20 -15 -10 -5 0 5
Pin-dBm
PAE-%,P -dBm
OUT
0
50
100
150
200
250
300
350
400
Current-mA
POUT
PAE
I_VDD
20
25
30
35
40
45
50
55
60
850 860 870 880 890 900 910 920 930 950
Frequency-MHz
PAE-%,P -dBm
OUT
200
220
240
260
280
300
320
340
360
Current-mA
PAE
940
I_VDD
POUT
CC1190
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
www.ti.com
TYPICAL CHARACTERISTICS
TC= 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external
matching components optimized for 915 MHz operation.
Figure 2. LNA Gain and Noise Figure vs Operating Frequency Figure 3. LNA Gain vs Temperature
SPACER
Figure 4. LNA Gain vs Supply Voltage Figure 5. Input Impedance of LNA Measured from Antenna Port
on CC1190EM (RX Active)
Figure 6. PA Output Power, PAE and Current Consumption Figure 7. PA Output Power, PAE and Current Consumption
vs Input Power vs Operating Frequency at 5 dBm Input Power
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l TEXAS INSTRUMENTS Current . mA Cunem . mA
20
25
30
35
40
45
50
55
60
-40 -30 -20 -10 0 30 40 50 70 80
Temperature- C
o
PAE-%,P -dBm
OUT
200
220
240
260
280
300
320
340
360
Current-mA
10 20 60
I_VDD
PAE
POUT
20
25
30
35
40
45
50
55
2 2.2 2.4 3 3.2 3.4 3.6
SupplyVoltage-V
PAE-%,P -dBm
OUT
175
200
225
250
275
300
325
350
Current-mA
2.6 2.8
POUT
PAE
I_VDD
CC1190
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SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
TYPICAL CHARACTERISTICS (continued)
TC= 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external
matching components optimized for 915 MHz operation.
Figure 8. PA Output Power, PAE and Current Consumption Figure 9. PA Output Power, PAE and Current Consumption
vs Temperature at 5 dBm Input Power vs Supply Voltage at 5 dBm Input Power
Figure 10. Input Impedance Measured at SMA connector on PA_IN/LNA_OUT on CC1190EM (TX Active)
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CC102X
Connected to
VDD/GND/MCU
RF_OUT
PA_EN
LNA_EN
RF__IN
SAW
CC1190
VDD
PA_EN
LNA_EN
HGM
BIAS
TR_SW
LNA_OUT
PA_OUT
PA_IN
LNA_IN
VDD_LNA
VDD_PA1
VDD_PA2
CC1190
SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
www.ti.com
INTERFACE AND CONTROL
Controlling the Output Power from CC1190
The output power of CC1190 is controlled by controlling the input power. The CC1190 PA is designed to work in
compression (class AB), and the best efficiency is reached when a strong input signal is applied. The output
power can be reduced by setting the pin HGM low. If a reduced maximum output power is wanted, the
impedance seen by the PA should be increased, thus increasing the PA efficiency by changing the output
matching network.
Input Levels on Control Pins
The three digital control pins (PA_EN, LNA_EN, HGM) have built-in level-shifting functionality, meaning that if
CC1190 is operating from a 3.6 V supply voltage, the control pins will still sense 1.6 - 1.8 V signals as logical '1'.
An example of the above is that PA_EN is connected directly to the PA_EN pin on CC110x, but the global supply
voltage is 3.6 V. The PA_EN pin on CC110x will switch between 0 V (RX) and 1.8 V (TX), and this is still a high
enough voltage to control the operating mode of CC1190.
However, the input voltages should not have logical '1' level that is higher than the supply.
Connecting CC1190 to a CC102X Device
Table 2. Control Logic for Connecting CC1190 to a CC102X Device
PA_EN LNA_EN HGM Mode Of Operation
0 0 don't care Power Down
0 1 0 RX Low Gain Mode
0 1 1 RX High Gain Mode
1 0 0 TX Low Gain Mode
1 0 1 TX High Gain Mode
Figure 11. CC1190 + CC102X Application Circuit
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CC110X
Connectedto
VDD/GND/MCU
RF_P
PA_EN
RF_N
SAW
ConnectedtoMCU
VDD
CC1190
PA_EN
LNA_EN
HGM
BIAS
TR_SW
LNA_OUT
PA_OUT
PA_IN
LNA_IN
VDD_PA1
VDD_PA2
VDD_LNA
CC430/CC111X
Connectedto
VDD/GND/SoC
RF_P
LNA_EN
RF_N
SAW
VDD
CC1190
PA_EN
LNA_EN
HGM
BIAS
TR_SW
LNA_OUT
PA_OUT
PA_IN
LNA_IN
VDD_PA1
VDD_PA2
VDD_LNA
PA_EN
CC1190
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SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
Connecting CC1190 to a CC110X Device
Table 3. Control Logic for Connecting CC1190 to a CC110X Device
PA_EN LNA_EN HGM Mode Of Operation
0 0 don't care Power Down
0 1 0 RX Low Gain Mode
0 1 1 RX High Gain Mode
1 0 0 TX Low Gain Mode
1 0 1 TX High Gain Mode
Figure 12. CC1190 + CC110X Application Circuit
Connecting CC1190 to a CC430 or CC111X Device
Table 4. Control Logic for Connecting CC1190 to a CC430 or CC111X Device
PA_EN LNA_EN HGM Mode Of Operation
0 0 don't care Power Down
0 1 0 RX Low Gain Mode
0 1 1 RX High Gain Mode
1 0 0 TX Low Gain Mode
1 0 1 TX High Gain Mode
Figure 13. CC1190 + CC430/CC111X Application Circuit
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SWRS089 A –NOVEMBER 2009–REVISED FEBRUARY 2010
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REVISION HISTORY
Changes from Original (November 2009) to Revision A Page
• Changed the data sheet from Product Preview to Production ............................................................................................. 1
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PACKAGE OPTION ADDENDUM
www.ti.com 17-Jan-2016
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
CC1190RGVR ACTIVE VQFN RGV 16 2500 Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1190
CC1190RGVT ACTIVE VQFN RGV 16 250 Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1190
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
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www.ti.com 17-Jan-2016
Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
MECHANICAL DATA YGV (Si'flmeim 13> 3‘ WSWC QUAD H A '/'\'3K K37 7/0 4 fl » \ V V 4 v V 4 v \ \ U U M ‘ A ‘ fl“ 3 P , 3 x ' H H H >4 NC‘LS A‘ hue/Jr mmenswons are m mflhmetem Dwmens amng C’vd (c‘erancv‘g per ASML W45N719§4 fimDOm) Tm: draw'flq ‘5 subject to change We“: rohce Quad F‘ut' , NW‘euds (ow) pucmge omngmum, The par, as warm pod r'ust be so‘deved to the board 101 (hevmu‘ and 'vvedvuvicn‘ peflorvnuuce See me uscwhoru‘ Ngme n we swam pm Sweet ‘01 salads 'eguvdvg he exucsed UVev'vvu‘ pod Vectmes and dwnens'w'vs Fm S w M 1 yEDEC M07220 {if TEXAS INSTRUMENTS www.1i.com
THERMAL PAD MECHANICAL DATA RGV ($7PVQFN7NTB) PLASTlC QUAD FLATPACK NoiLEAD THERMAL lNFORMATlON This package incorporates an exposed thermal pad that is designed to be attached directly to an external heatsink. The thermal pad rnust be soldered directly to the printed circuit board (PCB). After soldering, the PCB can be used as a heatsink. in addition. through the use of thermal vias. the thermal pad can be attached directly to the appropriate copper plane shown in the electrical schematic for the device. or alternatively. can be attached to a special heatsink structure designed into the PCB. This design optimizes the heat transfer from the integrated circuit (lC), For iniormation on the Quad Flatpack NoiLead (OFN) package and its advantages, refer to Application Report. OFN/SON PCB Attachment. Texas instruments Literature No. SLUA27l. This document is available at www,ticom, The exposed thermal pad dimensions (or this package are shown in the following illustration. Pin I indicator is electrically tied to the exposed thermal pad Pin I indicator metal require may not be present on some devices O,‘l6:t:0,05 (2 Places) — “5:035 (2 PM“) l 4 t U U U fiExpased Thermal Pad l 16 4 ‘/C5 2.16:0,10 D + C D C t ‘3 ‘5 C5 '1 {T {T r 12 9 2.1610,“) Bottom View Exposed Thermal Pad Dimensions 4206351—2/L 05/i3 NOTE: All linear dimensions are in millimeters {I} TEXAS INSTRUMENTS www.ti.cum
LAND PATTERN DATA &"V (S PVQ N \h) JLASHC QU/U LNPACK Ni) L,AD pm 1 txampie jourd Layout Exampie Stencii Design Va Keep on Area 0175mm s:enc’i rnickness 072er square (Nu-,5 E) - : 1i, » \ - is _ \ 69% Primed Soider Coverage Ce'iter 3nd ,uyoui Emmpte \ (Nuts D) * Snider Musk Opeiirig ' (Note F) 3nd Geo'riet'y (Nate 0) « NOTES. A, At "ieur d"rierisi'ur‘s are in rriit"rieters. in: drawing is subject ta :tidr‘ge wit'iuu: 'iut'ice PJbticut'dri tPCr7351 is recommended for atterriute cesig'is rnis Duckcge is d 'gned tn be sciderec to c ttierrridi pad on t'ie bocrc Re‘er to Appi'icdtiar Nate, arN Pacmqes‘ Texcs tr‘s. umerits Literature No SLUA271‘ c'id csa the Product Data St‘eets Jar specific thermut iriturr'iut'dri, via requirements, uric recommended bodrc tcyuut Tt‘ese cucumer‘ts are uvu'itubte at www ticom <'ittp. www="" ti.cum=""> E Laser cutti'ig coeriu'es witt‘ trupezuidut wcts arid atso rmrid'irq carriers w'iH o‘te' better pusie retease CJSTO'HEFS stimtd curitdct the'r :uurd cssemby site ‘or stencit desiqri recommendut'uris. Re‘er :0 WC 7525 for StE'iCit des'gri coris'derctioris, F Custcmers st‘oud :o'ituct their tmc'c fubr'catiori site for sutde' musk tuterurices 30:7 {i TEXAS INSTRUMENTS www.|i.ccm
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