2N5086, 2N5087, MMBT5087 Datasheet by ON Semiconductor

I=AIRCHILDW ON Semiconductor®

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

— FAIRCHILD — SEMCDNDUCTDRK

2N5086/2N5087/MMBT5087

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta=25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage -50 V

VCBO Collector-Base Voltage -50 V

VEBO Emitter-Base Voltage -3.0 V

ICCollector current - Continuous -100 mA

TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V

V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V

ICEO Collector Cutoff Current VCB = -10V, IE = 0

VCB = -35V, IE = 0

-10

-50

ICBO Emitter Cutoff Current VEB = -3.0V, IC = 0 -50 nA

On Characteristics

hFE DC Current Gain IC = -100µA, VCE = -5.0V

IC = -1.0mA, VCE = -5.0V

IC = -10mA, VCE = -5.0V

5086

5087

5086

5087

5086

5087

150

250

150

250

150

250

500

800

VCE(sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA -0.3 V

VBE(on) Base-Emitter On Voltage IC = -1.0mA, VCE = -5.0V -0.85 V

Small Signal Characteristics

fTCurrent Gain Bandwidth Product IC = -500µA, VCE = -5.0V, f = 20MHz 40 MHz

Ccb Collector-Base Capacitance VCB = -5.0V, IE = 0, f = 100KHz 4.0 pF

hfe Small-Signal Current Gain IC = -1.0mA, VCE = -5.0V,

f = 1.0KHz

5086

5087

150

250

600

900

NF Noise Figure IC = -100µA, VCE = -5.0V

RS = 3.0kΩ, f = 1.0KHz

IC = -20µA, VCE = -5.0V

RS = 10kΩ

f = 10Hz to 15.7KHz

5086

5087

5086

5087

3.0

2.0

3.0

2.0

2N5086/2N5087/MMBT5087

PNP General Purpose Amplifier

• This device is designed for low level, high gain, low

noise general purpose amplifier applications at

collector currents to 50mA.

SOT-23

1. Base 2. Emitter 3. Collector

Mark: 2Q

TO-92

1. Emitter 2. Base 3. Collector

2N5086/2N5087/MMBT5087

Thermal Characteristics Ta=25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."

Symbol Parameter

Max.

Units

2N5086

2N5087 *MMBT5087

PDTotal Device Dissipation

Derate above 25°C

625

5.0

350

2.8

mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

2N5086/2N5087/MMBT5087

Typical Characteristics

Figure 1. Typical Pulsed Current Gain

vs Collector Current Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current

Figure 3. Base-Emitter Saturation Voltage

vs Collector Current Figure 4. Base-Emitter On Voltage

vs Collector Current

Figure 5. Collector Cutoff Current

vs Ambient Temperature Figure 6. Input and Output Capacitance

vs Reverse Voltag

0.01 0.03 0.1 0.3 1 3 10 30 100

10 0

15 0

20 0

25 0

30 0

35 0

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

V = 5V

0.1 1 1 0

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLECTOR CURRENT (mA)

V - COLLECTOR EM ITTER VOLTAGE (V)

CESAT

β= 10

- 40

125

0.1 1 10 50

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTE R VOLTAGE (V)

BESAT

25 °C

- 40 °C

125 °C

β= 10

0.1 1 10 25

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER ON VOLTAGE (V)

BEON

V = 5V

25 °C

- 40 °C

125 °C

25 50 75 100 125

0.01

0.1

100

T - A MBIE NT TEMP ER ATURE ( C)

I - COLLECTOR CURRENT (nA)

CBO

V = 40V

048121620

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz

Cobo

ibo

2N5086/2N5087/MMBT5087

Typical Characteristics(Continuce)

Figure 7. Gain Bandwidth Product

vs Collector Current Figure 8. Noise Figure vs Frequency

Figure 9. Wideband Noise Frequency

vs Source Resistance Figure 10. Power Dissipation vs

Ambient Temperature

Figure 11. Equivalent Input Noise Current

vs Collector Current Figure 12. Equivalent Input Noise Voltage

vs Collector Current

0.1 1 10 100

100

150

200

250

300

350

I - COLLECTOR CURRENT (mA)

f - GAIN BANDWIDTH PRODUCT (MHz)

V = 5V

µΩ

Ω

√

100 1000 10000 1000000

f - FREQUENCY (Hz)

NF - NOISE FIGURE (dB)

V = 5V

I = - 250 µA, R = 5.0 kΩ

C S

I = - 500 µA, R = 1.0 kΩ

I = - 20 µA, R = 10 kΩ

Ω

√

µΩ

1,000 2,000 5,000 10,000 20,000 50,000 100,000

R - SOURCE RESISTANCE ( )

NF - NOISE FIGURE (dB)

V = 5V

BANDWIDTH = 15.7 kHz

I = 10 µA

I = 100 µA

SΩ

√

µΩ

Ω

√

0 25 50 75 100 125 150

125

250

375

500

625

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

TO-92

SOT-23

µΩ

Ω

0.001 0.01 0.1 1

0.1

0.2

0.5

I - COLLECTOR CURRENT (mA)

i - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)

V = - 5.0V

i , f = 100 Hz

√

i , f = 1.0 kHz

i , f = 10 kHz

√

µΩ

Ω

√

0.001 0.01 0.1 1

0.001

0.002

0.005

0.01

0.02

0.05

0.1

I - COLLECTOR CURRENT (mA)

e - EQUIVALENT INPUT NOISE VOLTAGE ( V/ Hz)

V = - 5.0V

e , f = 100 Hz

e , f = 1.0 kHz

ne , f = 10 kHz

√

2N5086/2N5087/MMBT5087

Typical Characteristics (Continuce)

Figure 13. Contours of Constanct

Narrow Band Noise Figure Figure 14. Contours of Constanct

Narrow Band Noise Figure

Figure 15. BContours of Constant

Narrow Band Noise Figure Figure 16. Contours of Constant

Narrow Band Noisd Figure

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - COLLECTOR CURRENT (mA)

R - SOURCE RESISTANCE ( )

BANDWIDTH = 1.5 kHz

10 dB

Ω

6.0 dB

4.0 dB

10 dB

6.0 dB

4.0 dB

2.0 dB

V = - 5V

f = 10 kHz

1.0 dB

Ω

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - COLLECTOR CURRENT (mA)

R - SOURCE RESISTANCE ( )

12 dB

Ω

8.0 dB

5.0 dB

3.0 dB

V = - 5V

f = 100 Hz

BANDWIDTH = 15 Hz

12 dB

8.0 dB

5.0 dB

Ω

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - COLLECTOR CURRENT (mA)

R - SOURCE RESISTANCE ( )

10 dB

Ω

6.0 dB

4.0 dB

V = - 5V

f = 1.0 kHz

BANDWIDTH = 150 Hz

10 dB

6.0 dB

4.0 dB

Ω

0.01 0.1 1 10

100

200

500

1,000

2,000

5,000

10,000

I - COLLECTOR CURRENT (mA)

R - SOURCE RESISTANCE ( )

Ω

6.0 dB

4.0 dB

V = - 5V

f = 10 MHz

BANDWIDTH

= - 2 kHz

6.0 dB

4.0 dB

2.0 dB

2N5086/2N5087/MMBT5087

Typical Common Emitter Characteristics (f = 1.0KHz)

Typical Common Emitter Characteristics Typical Common Emitter Characteristics

Typical Common Emitter Characteristics

-25-20-15-10-50

0.4

0.6

0.8

1.2

1.4

1.6

V - COLLECTOR-EMITTER VOLTAGE (V)

HARACTERISTICS REL. TO VALUE, V =-5.0V

T = -25 C

I = 1.0 mA

hoe

h and h

fe ie

f = 1.0 kHz

0.1 0.2 0. 5 1 2 5 1 0

0.01

0.1

10 0

I - COLLECTOR CURRENT (mA)

HARACTERISTICS REL. TO VALUE, I =1.0mA

T = -25 C

V = -5.0V

hie

f = 1.0 kHz

hfe

hoe

-60 -40 -20 0 20 40 60 80 100

0.4

0.6

0.8

1.2

1.4

1.6

1.8

T - AMBIENT TEMPERATURE ( C)

CHARACTERISTICS REL. TO VALUE, T = 25 C

V = -5.0V

f = 1.0 kHz

I = 1.0 mA

h and h

fe oe

Package Dimensions

2N5086/2N5087/MMBT5087

Dimensions in Millimeters

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25) 4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

2N5086/2N5087/MMBT5087

Package Dimensions (Continued)

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

0.97REF 1.30

±0.10

0.45~0.60

2.40

±0.10

+0.05

–0.023

0.20 MIN

0.40 ±0.03

SOT-23

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

FACT Quiet Series™

FAST®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UltraFET®

VCX™

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

Across the board. Around the world.™

The Power Franchise™

Programmable Active Droop™

a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www mm cumrsuerguwaxem Mavkmg gm

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA