NM27C256 Datasheet by ON Semiconductor

— FAIRGHILD — sEMthNDuc‘rDRrM NM27CZ56 July 1998 262,144-Bit (32K x 8) High Performance CMOS EPROM General Description The NM270256 is a 256K Eiectrrcaiiy Programmable Read Only Memory it is manufactured in Fairchlid's latest CMOS spilt gate EPROM technology which enables it to operate at speeds as last as 90 ns aocess time over the run operating range The NM27czss provides microprocessor-based systems exlerl- slve storage tapacily tor large portions ot operating system and application software its 90 ns access time provides high speed operation wilh high-periormance CFUs. The NM27c255 otters a single chip solution tor the code storage requiremenls oi 100% ﬁrmware-based equipment Frequently-used soitware routines are quickly executed lrom EPROM storage greatly enhancing system utility The NM270256 is contigured in the standard EPROM pinoui which provides an easy upgrade path tor systems whlch are currently using standard EPROM: The NM270256 is one member ofa high density EPROM Family which range In densilies up to 4 Mb. Features I High pertormanoe cmos 790 ns access lime I JEDEC standard pin ooniiguration — 23pm PDIP package — 32pm chip carrier —28»piri CERDIP package I Drop-in replacement ior 27c255 or 27256 I Manuiaiciuiei’s rdentiiicaiion code Block Diagram Dara Outpure o.) 01 Vcc 0—» f—/% GND 0—» VPP 0—» E —. Output Enabie _ and chrp Enable iogrc Oulpui CFJPGM —’ Bullen —> —> _. YDeooder —> —> —> VGellng —> A0414 Address —> inpuu _. —> —’ xDecoder —> —> —> —> —> —> Dsotosss-t a; ma Feirdrrtld semioonductor corporation wwwlaird1ildssmi.eom WOHdS SOWO eoueuuoued “5m (9 X )IZS) “8-1717 L‘ZQZ QSZOLZWN

Connection Diagrams 27003) new 270020 270010 2705” DIP 27051! 271mm 27cm 27cm 27”“ A19 xxvap XX/VPP XX/va NM270256 vg KL Vcc Vcc A15 A16 A16 A16 k.) XX/PGM XX/PGM A15 A15 A15 A15 A15 A15 A15 VPPEI 21; j V00 V01: XX A17 A17 A17 A12 A12 A12 A12 A12 A12E 2 27 3 A14 A14 A14 A14 A14 A14 A7 A7 A7 A7 A7 A7E 3 26 3 A13 A13 A13 A13 A13 A13 A5 A3 A5 A5 A5 As E 4 25 3 A8 A3 A3 A5 A5 A13 A5 A5 A5 A5 A5 A5 E 5 24 3 A9 A9 A9 A9 A9 A9 A4 A4 A4 A4 A4 AAE 6 23 3 A711 A11 A11 A11 A11 A11 A3 A3 A3 A3 A3 A3E 7 22 3 0E GEVPP (i (TE (WE (TE/VPP A2 A2 A2 A2 A2 A2E 8 21 3 A10 A10 A10 A10 A10 A10 A1 A1 A1 A1 A1 A11 9 2n 1 (TE/FEW GTE/m 5E CT; Em ﬁ/ﬁn A0 A0 A0 A0 A0 AuE 10 19 j 07 07 07 07 07 07 00 00 00 00 00 00E 11 18 j 06 06 Os 05 06 06 01 01 01 01 01 01E 12 17 j 05 05 05 05 05 05 02 oz 02 02 02 02: 1s 1s 3 0.. 04 04 04 04 04 GND GND GND GND GND GNDF 14 15 1 03 05 03 03 05 03 um comm spasm pm comiguvaiions are shown 11.11: mm adpcenl .0 1m A11/12702559111; 050155352 Commercial Temp. Range (0°C to +70°c) Pin Names _ 0 Va: ' 5" :10 A Symbol Description Parameter/Order Number Access Time (ns) AH“, Adams; “”2792“ 0‘ N. V90 9° CE/PGM cmp Enable/Program NM27C256 Q, N, v 100 100 CE Outpul Enable NM270256 Q,N,v120 120 00-07 Outputs NM27°255 01N1V15° ‘50 xx Don‘t Care 1111111119 Read) NM27C256 Q, N, v 200 200 Extended Temp. Range (40°C to +85°C) vcc = 5v :1 0% Parameter/Order Number Access Time (ns) NM270255 QE NE, VE 120 120 NM270256 QE NE, VE 150 150 NM270255 QE NE, VE 200 200 um: Sunaee mount PLCC paaage Mime is. commercial and exlended 1empaaime 15111155 only Package Types: NM27C256 Q, N, V XXX 0 = Guam-Windowed Ceramic DIF' N = Plasllc OTP DiP V = Surface-Mount PLCC ~ All Packages con1orm 1o1ne JEDEC standard. ~ All 191519": are guaranteed Ia iuncuon forslower speeds 9????5’2’3’3’ PLCC 1~§&x 811’ ((>><>< 4="" 3="" 21323130="" 29="" 28="" 27="" 26="" 25="" 24="" 23="" 22="" 21="" 14151617181920="" 68§§566="" 0="" top="" —="" a10="" 0501012333="" www="" la1rd11ldsem1.eom="" wohds="" sowo="" 9°u9w10h9d="" 115m="" (9="" x="" )izs)="" “8-1717="" l‘zqz="" qszolzwn="">

Absolute Maximum Ratings (Note 1) E50 Probation > 200W storage Temperature -65“C lo +150°C A" 0“le VD'laws Wilh Respect to Ground voc s 1 av to GND 4) av All input Voilages excepl A9 with Respect to Graund Dev to +7v Operating Range v” and A9 with Respect to Ground -uv7v to “AV Range Temperature V01? V00 Supply Voﬂage mm Comm i one la +70%: +5v :1 W. Respect to Ground asv to +7v Induslrlal «we lo +a§~c +sv :1 0% Read Operation DC Electrical Characteristics Over Operating Range with VPP = VCC Symbol Parameter Test Conditions Min Max Units v1L input Low Level 4) 5 o a v V”. input High Level 2.0 vCC H v v0L Output Low Voltage I0L = 2 1 mA 0 A v v0H Output High Voltage lOH = »2 5 mA 3.5 v lse. vCC Standby Current cs = \/OC :0 av 1oo rut more 11) (most l5,32 vCC Slandby Current (TIL) CE = v.H 1 mA lcct Vcc Active Current a; a CT v.L l=5 MHz 35 mA ‘I'I'L inputs inputs a v1H or Vru l/O a 0 mA lpp var, Supply Current var, a VOC 10 uA v” v” Read Voltage vcc - o 7 vcc v i” input Load Current v1N = 5 5v or GND .1 1 uA lLo Output Leakage current vOUT = 55v or GND -10 1o pA AC Electrical Characteristics Over Operating Range with vPP = vCC Symbol Parameter 90 100 120 150 200 Units Min Max Min Max Min Max Min Max Min Max tACC Address to Output Delay 90 too 120 150 200 hs lCE 7:5 lo Output Delay 90 too 120 150 200 tDE BE lo Output Delay 35 so so so so l”F Output Disable to 30 30 35 45 45 [Nate 2) Output Float t0H Output Hold tram o o o o 0 (Nate 2) deresgs, OE or oral Whichever Occurred First Capacitance (Note 2) TA = +25‘C, Symbol Parameter Con Max Units cIN input Capacitance v1N a ov s 12 pF cBUT Output Capacltahee vOUT a UV 9 l2 pF 3 www laird1ildssmi.ecm WOHdS SOWO eoueuuoued “5m (9 X )IZS) l!8'1717L‘39?. QSZOLZWN

AC Test Conditions Output Load I 'ITL Gale and CL =100 pF(Noie 8) Inpul Rlse and Fall Tlmes s 5 ns lnpul Pu‘se Levels 0 45 to 2 4V Twrning Measurement Revevence Level (Note 10) Inputs 0.8V and zav Outputs 0 av and 2 DV AC Waveforms (Note 6) (Note 7) (Note 9) ADDRESSES :2; )1 ADDRESSES vmn ) ca Tm — m * .— see a -‘nee. OE W :1 m k ‘— ,— ouw :g; M meowm .M use: om-A Me I: soeeeee above lhose Hem unde- ‘Abso‘ule Max-mum Rahngs' may ause permuen: damwe (0 me dewne We ‘5 slress rahng omy and mmene: epeyemen a me aeme emeee m any me: condnluns shave "was Indicated mlhe upemlmnal seams mm: specmcahan e not Imp‘led Exposurem abw‘me maximum mung Dmdmuns m snendsd Demos may amea demos whammy m. 2: This par-melon .e emy sampled and :e nol «meme Me 1: He may be delayed up :0 :Am 4.; meme lang eageeuae wunem mm :m Mme 4. me no, m «C, mmpave ueve: .e delermmed ls mlnws mgr: to TW-STME‘, we measured vM Lucy -o wv, Low |o musnTE: we measured vo‘. 100» . 0 10V um. 5. meme may he enema new as e, 65 um a: The powerswncmng mmmemmx a: swam vequve cemmaemee decouplmg u :s mcummended ma: a: Iran a n : uF ceramic capacmov be used on mly dawn: bemeen vcc and GND Me 7: The empms me: be resin-ﬂed lo vCC . 1 uvm mm ‘Nchrup and aevxoe damage Note a: WLGme :0: . u 5 m, w . Ann gm 0. e we pF muuaenmn cwaenenoe Note 9: VW maybe eemeaea |o vDC excep| during programming um 1n: \npms and empms um “Manhunt m 2 av cm 20 ns Max um memos mpm V. = GND :o :«v: v“: VE: to 3v Programming Characteris ics (Note 12) (Note 13) (Note 14) (Note 15) Symbol Parameter Conditlons Mln Typ Max Units 4 www lavmwldssmwcm WOHdS SOWO 9°U9W10H9d WM (9 X )IZS) “8-1717 L‘ZQZ QSZOLZWN

Programming Characteris ics (Note 12) (Note 13) (Note 14) (Note 15) (Continued) Symbol Parameter Condlllons Mln Typ Max Units tAS Address Setup Tlme 1 pa t0E5 OE Setup Time 1 pa tvps vPP Setup llme 1 us tvcs vcc Setup Tune 1 p5 IDS Dala Setup Tlme 1 pa tAH Address Hold Time 0 [Ls tDH Data Hold Tlme 1 pa lBF Output Enable to Oulpm CE = \/IL 0 60 ns Float Delay tPW Program Pulse wtotrr 45 so 105 us t0E Data Valld lrom 05 CE = vIL 100 ns loo vPP Supply Current c: = vIL 30 mA during Programming Pulse lcc vcc Supply Current so rrlA 1A Temperature Ambient 20 25 an °c vcc Power Supply Voltage 625 s 5 675 v vFF Programming Supply Voltage 125 12 75 110 v 1m lnput RISe, Fall Tlme 5 n5 vIL Inpul Low Voltage 0 0 0,45 v vyH lnput l-llgr. Voltage 2 4 A n V IN lnput Timing Helerertce Voltage 018 210 v tom Output Tlrnlng Heterenee Voltage 018 210 v Programming Waveforms (Note 14) mew Pﬁggw ADDRESSES 2‘“ ADDRESS" H X 08V {I _. a, «— mm L om lN SYABLE __"53mt our mo— _ troy .oou L“ .oou _ 1m 1 r r -‘cr vcc 52 ' hm. tr yPF 12 rev I ‘W tr _ 211 CE new \1 , \1 l but (E 5?; _r ,— oaotooeea Mete1zrrmromtaa Standard proaua warranty aopttee to £1:le programmed to apeamoatrora dmvlbed nerem Mot-1mm must be applled stmutomeeusly or more v”, and removed etmultaneously or alter V» "to EPRDM must not be tnsettea Imo or removed tront a poem wllh vollage appllet to V» or vcc Mote umre maxlmum absoltﬂe allowaole voluge rttmon may oe applled to toe vw oln ourmg programmlng ls 14v care mus| oe Lake" wnen swltenlng tne Voo Supply to Prevenl any werenwtlrom exueedmulhls 1w maxlmum speerlroetron At least a o 1 NF capaerlor rs requrreo across v» vaa to GND to strapless spurroue vottapettanerents wnen may damage tne oeyloe Me1§:Dtmng power to tne PGM otn must oe orougnt nlgn {2 V») etttter oomoloent wltn or oetore power a apolrett to v” wwwlalrd1lldssml.oom WOHdS SOWO eoueuuoued “5m (9 X )IZS) l!8'1717l‘39?. QSZOLZWN

Turbo Programming Algorithm Flow Chart um: vcc = 6.5V V» = 12.75v n: 0 ADDRESS = FIRST LOCATION V PROGRAM ONE Eons PULSE INCREMENT n V DEV‘CE vEs m VEFUFY FAILED BYTE Pass INCREMENT ADDRESS n :0 V > VER‘FV m BYTE INCHEMENT PASS PROGRAM ONE 50 us ADDRESS V PULSE CHECK ALL EYTES 1ST: vCC = v7? = e,ov 2ND: vCE _ pp: 4.3V The sundam Natmna‘ Smlmndumm a‘gumhm may also be used but n wnl have \ohger programming «me FIGURE 1. 0501 08115 www lavamussmmm WOHdS SOWO 9°U9W10H9d WM (9 X )IZS) “8-1717 L‘ZQZ QSZOLZWN

Functional Description DEVICE OPERATION The six modes otoperaiion otihe EPROM are listed in Table 1 it should be notedihat all inputs iorthe slx modes are aiTrL levels, The power supplies required are vCC and vpe, The vPP power supply must be at 12,75V during the three programming modes, and must be at 5v inihe otherthree modes. The vCC power supply must be at 6.5V during the three programming modes, and at 5v In the other three modes, Read Mode The EPROM has two control iunctions, both oi which must be iogdcﬂ active in orderto obtain data at the outputs. Chip Enable (CE/PGM) is the power control and should be used ior device selection. Output Enable (oTEi is the output control and should be used to gate data to the output pins. independent oi device selection. Assuming that addresses agstabie. address access time (two) is equal to the delay irom CE to output (leg), Data is availibleﬂis outputs tOE atterthe tailing edge of OE, assuming that CE/PGM has been low and addresses have been stable ior at least I‘m 405 Standby Mode The EPROM has asiandby mode which reduces the active power dissipation by over 99% irom ass mWio o 55 mw. The EPROM is plaiecmhe siandby mode by applying a was high signal to the CE/PGM inpui. When In standby modiLthe outputs are In a high impedance slate, independent oi the OE input Output Disable The EPROM is placed in output disable by applying a ‘I'I'L high signal to the SE inpui. When in output disable all circuitry is enabled except the outputs are in a high impedance state (TRI- STATE) Output OR-Typlng Because the EPROM is usually used in larger memory arrays, Fairohiid has provided a 2-iine control iunoiion that accommo- dates this use oi muiiipie memory connections The 2-iine control iunction allows Ior: i the lowest possible memory power dissipation, and 2 complete assurance ihai output bus contention will not occur To most etticlenily usethese two control lines, it is recommended that (TE/m be decoded and used as the primary device select- lng funcllon, while (E be made a common connecllon to all devices In the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are In thelrlovv power standby modes and that the ouipui pins are adlve oniyvvhen data is desired from apartlcuiar memory device Programmlng CAUTION' Exceeding tAVonplni IVPalwllldamagetheEPROM initially, and aitereach erasure, all bits otihe EPROM are In the “1‘s” state Data is introduced by selectively programming “0‘s" into the desired bit locations. Although only “0'5" will be pro- grammed, both “1‘s” and “0‘s” can be presented in the data word. The only way to change a “o" ioa “I " is by ultraviolet light erasure The EPHOM is in the programming mode when the \/,,F power supply is at 12 75v and 07E is at V“, it is required that at least a 0.1 pi: capacitor be placed across vac, vcc to ground to suppress spurious voltage transiems which may damage the device. The data to be programmed is applied a bite in parallel to the data output pins The levels required ior the address and data inputs are TrL. Whentheaddress and gears stable anactive low, TTL program pulse ls applied to the cam input A program pulse musl be applied at each address location to be programmed. The EPROM is programmed with the Turbo Programming Algorithm shown in Figure 1. Each Address is programmed with a series oi 50 us pulses until it veriﬁes good up to a maximum oi 10 pulses. Most memory cells will program with a single 50 ps pulse. (The standard National Semiconductor Algorithm may also be used but it will have longer programming time.) The EPRQM must not be programmed with a DC signal applied to the GE/F'GM inpui. Programming muiiipie EPFIOM in parallel with the same data can be easily accomplished due to the simplicity oi the programming requirmenis, Like lnpuis oriheparaiiei EPROM may be connected together when they are programmid M the same data A low level i-rL pulse applied to the CE/FGM inpui programs the paralleled EPROM. Program lnhl it Programming muiiipie EPHOMS in paialﬁlmdlﬂereni data is also easily accomplished. Except tor CE/PGM, all like inputs (including (TE) oi the paraliel EPROMS may be common A ‘I'I’L low level program puise applied to an EPHOM‘S CE/PGM mm]! m vsF aliZJSlellprogram that EPROM.ATTLhighievel CE/ PGM input inhibits the other EPROMs irom being programmed Program Verliy Averiiy should be periormed on the programmed bits to determine whether they were correctly programmed. The verity may be periormed with vPP at 12.75v. vPP must be at V“, except during programming and program veriiy. AFTER PROGRAMMING Opaque labels should be placed over the EPROM window to prevent unintentional erasure Covering the window will also prevent iempoiarytunctionai iaiiuredue to the generation oiphoio currents, MANUFACTURER’S IDENTIFICATION CODE The EPROM has a manuiacturer's identiﬁcation code to aid in programming. When the device is inserted In an EPROM Free grammer socket, ihe programmer reads the code and then automatically calls up the speciﬁc programming algorithm ior the part, This automatic programming ooniroi is only possible with programmers which have the capability oi reading the code. The Manuiacturer's ideniiiicaiion code, shown in Tabiez speclﬁ- caliy identities the manutaeiuier and device type The code ior NM270256 is “BFOA” where “8F” designates that ii is made by Ealrchiid Semiconductor, and m" designaies a 255K part. The code is accessed by applying 12v :0 5v to address pin A9 Addresses Ai—As, Aiu—Ai s, and all control pins are held at v.,. Address pin A0 is held at W iorihe manuiacturei’s code, and held at v.H iorihe device code. The code is readon the eight data pins, on —07 Proper code access is only guaranteed at zsbc to 15’0. wwwlalrd1lldssml.eom WOHdS SOWO 9°U9W10H9d lIBIH (9 X )IZS) “8-1717 L‘ZQZ QSZOLZWN

Functional Description (Continued) ERASURE CHARACTERISTICS The erasure characteristics oi the device are such that erasure begins to occurwhen exposed to light with wavelengths shorter than approximately 4000 Ahgsirorns (A), It should be noted that sunlight and certain lypes oliluorescenilarnps have wavelengths In the «nook—4000A range The recommended erasure procedure tor the EPROM is expo» sure to short wave ultraviolet lighl which has a wavelength oi 2537A The integrated dose(i e , UV intensity x exposure lime) for erasure should be a minimum oi isw-sec/cmz. The EPROM should be placed wllhin l lrich Ol “16 lamp tubes dunng erasure. Some lamps have a ﬁller on lrlelr tubes whlcri should be Vernal/ed belove erasure Art erasure system should be callbraled periodically. Thedlstsnce ironr iampto device should be maintained alone inch Theerasure time increases as the square oi the distance from the lamp (ll distance is doubled the erasure time increases by iactor oi A) Lamps lose intensity as they age. When a lamp is changed the distance has changed orthe lamp has aged the system should Mode Selection be checked to make cenain lull erasure is occurring. incomplete erasure will cause symptoms that can be misleading. Program- mers, components, and even system designs have been errone- ously suspected when incomplete erasure was the problem. SYSTEM CONSIDERATION The power switching characteristics oi EPROM: requlre careiul decoupling oi the devices, The supply currenL lacy has three segments that are oi Interest to the system designer: the standby current level, the active current level, and the transient current peaks that are produced by voltage transitions on input pins. The magnitude oi these lranslanl curreni peaks is dependent oi the output capacitance loading oi the device The associated vac transient voltage peaks can be suppressed by properly selected decoupling capacitors, it is recommended that at least a 01 pF ceramic capacitor be used on every device between vCC and GND. This should be a high lrequency capacitor oi low inherent inductance In addition at leasiaAJpF bulk electrolytic capacitor shouidbe used between vCC and GND ior each eight devices The bulk capacitor should be located near where the power supply is connected to the array The purpose oi the bulk capacitor is to overcome the voltage drop caused by the inductive eiiects oi the PC board traces The modes oi operation oi NM27c256 listed in Table 1. A single 5v power supply is required in the read mode, All inputs are TTL levels except ior v”, and A9 ior device signature TABLE 1. Modes Selection Pins CE/PGM OE v", vw Outputs Mode Head v(L v(L vCC 5.0V noUT Output Disable x vM vCC 5.0V ngri-Z (Note is) Standby VH x vCC 5.0V High-z Programming v(L th 12,75v s 25v DIN Program Verity v(H v(L 12 75v 5 25v DOUT Program inhibit v(H v(H 12.75v s 25v High-z re... ib-Xan s. v( arvm TABLE 2. Manulamurer‘s Identification Code Pins A0 A9 07 06 05 04 03 02 01 00 Hex (1o) (24) (19) (1s) (17) (1e) (15) (13) (12) (11) Data Manuiacturer Code l4L 12v 1 o o o 1 1 1 1 at: Device Code viH 12v 0 o o o o 1 o o 04 8 wwwlalrd1lldssml.eom WOHdS SOWO 9°U9W10H9d “5m (9 X )IZS) lr!8'1717L‘39?. QSZOLZWN

Physical Dimensions inches (millimeters) unless otherwise noted wan men 4» m 2. 15 Rams I [W] \ am 0520ng \ [M |Isu1m5| mx as, X l / i ”K m L to 2301mm) anowaoss numzs] in 75. i wi wwwnow m , +ammoen ”W w. ”W m W575] , . DZESIMXWP an"; J_L ‘ i i , , i 3;” i i \H i i mm WWW # v i , « , , - , 3W w m [mm + m mmmmmvn omsn 021 ”P L “as .anzs J WP WP WP oaso [iuojfg UV Window Cavity Dual-ln-Line CerDlP Package (0) Order Number NM27025GQXXX Package Number J28AQ {82726252923222} 2mg m] is «5 new WWW‘. nsmrnszn (i523 i575) M «A (1255:0127)+ «t‘ \\ V \\¢cooxoms PM" {231 5 67' s 9' ioi’tiziai¢ i ’4 Wm. W ”,3...” MS (3515 1507) “052570015 .0535 m (Wm ) «Tm 0053 0059 Typ 0‘250‘55 0 (“6-3 753’ * .7 I 3 mm. 020 W W. v f “1:? n, m .nus 0050:0015‘ mm, 11 210 «i am ms ,a uni Zia-Lead Plastlc One-TIme-Programmable Dual-In—Llne Package Order Number NM210256NXXX Package Number N283 9 www laird1ildssmi.ecm WOHdS SOWO 9°U9W10H9d “5m (9 X )IZS) “8-1717 L‘ZQZ QSZOLZWN

Physical Dimensions inches (millimeters) unless otherwise noted [Wm i . “manna 75“” a- mm. < mm="" mm="" [mm="" mm,="" mm="" mmmmsiainss="" .i="" .m="" ,="" umnnmn="" \="" l="" “wow?="" 5="" 1="" mm="" mmuiomnm="" n="" a="" ‘n‘="" 1:)="" ‘="" 05410545="" manned]="" a="" 29="" 054m552="" ,="" “3941406!="" el="" 1:="" ,="" \="" 7="" “ww="" \="" ﬁg?="" nun-um!="" liusmil="" .="" ,mmm="" ma="" 9mm;="" :1="" +u|mlulﬂi$4="" e="" um“)="" i'="" inmsnm="" manna="" mm="" m:="" same:="" :2="" ”mm:="" 0mm="" ﬂmm="" ﬂ—m—m="" ,omulozsugi="" s="" .="" mag,="" mw="" a="" mix="" 0042="" i)="" mi="" '0“!="" ’="" "mm="" {35,="" 700mm)?!="" ammo»="" w="" wm.="" ..="" 0065mm="" mm.="" 7mm="" mm.="" vacuum="" unmnmz="" .mm="" mm="" mm="" 7mm.="" vv="" mm,="" +="" 441001015="" in="" de‘fgfs/="" seamus-b="" "dwai="" 32-lead="" plastlc="" leaded="" chlp="" carrler="" (plcc)="" order="" number="" nm270256vxxx="" package="" number="" va32a="" 1|]="" www="" laird1ildssmi.ecm="" wohds="" sowo="" 9°u9w10h9d="" “5m="" (9="" x="" )izs)="" “8-1717="" l‘zqz="" qszolzwn="">

Life Support Policy Feirchiio-s producis ere nci euihorizeo ior use as ciiiicei coinponenis in me suppoii devlces or sysieins wiihcui ihe express wrihen epprevei loe Presideni oi Falrchlld Semiconductor Corporeiion. As used herein 1 Liie suppcri oeiiices oi sysieins ere devices or sysienis which, (a)are|nlendedlorsurgli2l impianiinieihe body‘ or (ii) supporl or susiein iiie, and whcse reiiure ic pericrrn‘ when properiy used In ancordanoe Wm’l Inslrucllons for use plovlded In "19 labellng ran be reasonably expected lo resuii in a slgnlﬁcanl iniuryio ihe user. 2 A criiicei componeni is any componeni of e me suppori device or sysiein whose iaiiure ie perioiin can be reasonably ex- peeiecie muse ihe iaiiure ciihe iiie suppcri devlcs or sysiein, or in allec1 Its safety or eﬁecilveness Flimhlln alumna“ ammo Slmlcmﬂumx um“. sun». cum MW can» in .ii ioi incomes m i nan-5225372 Damon M .nini cinema Ennien m .u mi incomes rims m .3: iii, 1.583038% llaiuna m dim] 2.2mm i nimm wlwmuaar Nana mu NF. Roam we. Empire cenire ﬂMndy mu remorsui zen Kmiam mom.” m. «2212mm m «was»: ammo Scmcmﬂudu no... no, AF Maisilnemag 2.15—5.Viigiima Mayo-m my. "ammo-i n1 eieoeieeuo m ei Jana—aw rem-e am noi mm.- a», vupov‘ablily icr inn oi .ni tire-Airy owe» no eiioiii paicni mm er. imam sic him-id Mme in. 7|th .i any in. Mimi none. W chain. and eroiiin and specimens 1| www laird1ildssmi.ecm WOHdS SOWO 9°U9W10H9d “5m (9 X )IZS) “8-1717 L‘ZQZ QSZOLZWN