DG449 Datasheet by Vishay Siliconix

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— VISHAY. V a. m RoHS cuwmm SOTZfl-B NC 2 : 3 V, I GND 3 L-Q—e ‘N Top V‘ew Davina Markm G9 x
Vishay Siliconix
DG449
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
www.vishay.com
1
High Voltage Single SPDT Analog Switch in SOT23-8
FEATURES
• ± 15 V analog signal range
• On-resistance - RDS(on): 38 max.
•V
L logic supply not required
• TTL CMOS input compatible
• Rail to rail signal handling
• Dual or single supply operation
BENEFITS
• Wide dynamic range
• Low signal errors and distortion
• Break-before-make switching action
• Simple interfacing
• Small SOT23-8ld package; reduced board space
• Improved reliability
APPLICATIONS
• Precision test equipment
• Precision instrumentation
• Communications systems
• PBX, PABX systems
• Audio equipment
• Redundant systems
• PC multimedia boards
• Hard disc drives
DESCRIPTION
The DG449 is a dual supply single-pole/double-throw
(SPDT
) switches. On resistance is 38
and flatness is 2.6
max over the specified analog signal range. These analog
switches were designed to provide high speed, low error
switching of precision analog signals. The primary
application areas are in the routing and switching in
telecommunications and test equipment. Combining low
power, low leakages, low on-resistance and small physical
size, the DG449 is also ideally suited for portable and battery
powered industrial and military equipment.
The DG449 operates either from a single + 7 V to 36 V
supply or from dual ± 4.5 V to ± 20 V supplies. It is offered in
the very popular, small SOT23-8 package.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
DG449
TRUTH TABLE
Logic NC NO
0 ON OFF
1OFFON
VISHAYn
Vishay Siliconix
DG449
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
Notes:
a. Signals on NO, NC, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 8.4 mW/°C above 70 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 to 85 °C 8-Pin SOT23 DG449DS-T1-E3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter (Voltages Referenced to V-) Symbol Limit Unit
V+ 44
V
GND 25
Digital Inputsa, Vno/nc, VCOM
(V-) - 2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Current , (Any Terminal) Continuous 30 mA
Current (NO, NC or COM) Pulsed at 1 ms, 10 % duty cycle 100
Storage Temperature - 65 to 150 °C
Power Dissipation (Package)b 8-Pin SOT-23c675 mW
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
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Vishay Siliconix
DG449
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 VfTemp.b
D Suffix
- 40 °C to 85 °C
Unit Min.d Typ.cMax.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 V
On-Resistance RON Ino/nc = 1 mA, VCOM = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
38 45
57
On Resistance MATCH RON
Room
Full
5
6
On-Resistance Flatness RON
Flatness
Ino/nc = 1 mA, VCOM = ± 5 V, 0 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
2.6 7
8
Switch Off Leakage Current
Ino/nc(off) V+ = 16.5, V- = - 16.5 V
VCOM = ± 15.5 V
Vno/nc = -/+ 15.5 V
Room
Full
- 1
- 10
- 0.1 1
10
nAICOM(off)
Room
Full
- 1
- 10
- 0.1 1
10
Channel On Leakage Current ICOM(on)
V+ = 16.5 V, V- = - 16.5
VCOM = Vno/nc = ± 15.5 V
Room
Full
- 2
- 20
- 0.1 2
20
Digital Control
Input, High Voltage IINH Full 2.4 V
Input, Low Voltage IINL Full 0.8
Input CapacitanceeCIN Room 4 pF
Input Current VIN High or Low IIN VIN = 0 or 5 V - 1 1 µA
Dynamic Characteristics
Tu r n - On T im e t ON RL = 300 , CL = 35 pF
Vno/nc = ± 10 V
Room
Full
107 146
155 ns
Turn-Off Time tOFF
Room
Full
69 104
116
Charge InjectioneQCL = 1 nF, Vgen = 0 V, Rgen = 0 Room 5 pC
Off-IsolationeOIRR RL = 50 , CL= 5 pF, f = 1 MHz Room - 69 dB
CrosstalkeXTA L K RL = 50 , CL= 5 pF, f = 1 MHz - 80
Source NO, NC Off CapacitanceeCno/nc(off) f = 1 MHz Room 8pF
Channel On CapacitanceeCCOM(on) f = 1 MHz Room 18
Power Supplies
Positive Supply Current I+ V+ = 16.5 V, V- = - 16.5 V
VIN = 0, 5 V or, V+
Room
Full
420
30 µA
Negative Supply Current I- Room
Full
- 1
- 3
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DG449
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 VfTemp.b
D Suffix
- 40 °C to 85 °C
Unit Min.d Typ.cMax.d
Analog Switch
Analog Signal RangeeVANALOG Full 0 12 V
On-Resistance RON Ino/nc = 1 mA, VCOM = 3, 8 V
V+ = 10.8 V
Room
Full
67 85
96
On-Resistance MATCH RON
Room
Full
4
5
On-Resistance Flatness RON
Flatness
Ino/nc = 1 mA, VCOM = 2, 6, 10 V
V+ = 10.8 V
Room
Full
17 25
31
Dynamic Characteristics
Tur n -On Ti m e tON
VNO, NC = 10 V, RL = 300 , CL = 35 pF
Room
Full
133 168
192 nS
Turn-Off Time tOFF
Room
Full
58 92
96
Charge InjectioneQCL = 1 nF, Vgen = 0 V, Rgen = 0 Room 6 pC
Power Supplies
Positive Supply Current I+ V+ = 13.2 V, VIN = 0 V, 5 V or V+ Room
Full
320
30 µA
VI SHAY; V n u
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
www.vishay.com
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Vishay Siliconix
DG449
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
RON vs. VCOM and Dual Supply Voltage
On Resistance vs. VCOM and Temperature
Leakage Current vs. Analog Voltage
5
15
25
35
45
55
65
75
85
95
105
- 20 - 15 - 10 - 5 0 5 10 15 20
(Ω) ecnatsiseR-nO –rON
V - Analog Voltage (V)
COM
I or I = 1 mA
NONC
T = 25 °C
A
± 4.5 V
± 8 V
± 20 V
± 15 V
± 10 V
± 12 V± 12 V
± 13.5 V
e (Ω)cnatsiseR-nO –rON
5
15
25
35
45
55
65
- 15 - 10 - 5 0 5 10 15
V - Analog Voltage (V)
COM
V+ = + 15 V
V- = - 15 V
I or I = 1 mA
NONC
+ 85 °C
+ 25 °C
- 40 °C
- 250
- 200
- 150
- 100
- 50
0
50
100
150
200
250
- 20 - 15 - 10 - 5 0 5 10 15 20
VCOM - Drain-Source Voltage
)Ap( tnerruC egaka
e
L
II , DS
V+ = + 16.5 V
V- = - 16.5 V
I
COM(on)
I
COM(off)
T = 25 °C
I
NO(off)
/I
NC(off)
,V , V
NO NC
On Resistance vs. VCOM and Single Supply Voltage
On Resistance vs. VCOM and Temperature
Leakage Current vs. Temperature
0
20
40
60
80
100
120
140
04812 16 20 24 2832 36
(Ω) ecnatsiseR-nO –rON
V - Analog Voltage (V)
COM
I or I = 1 mA
NONC
T = 25 °C
A
V+ = 7 V
V+ = 9 V
V+ = 10.8 V
V+ = 12 V
V+ = 20 V
V+ = 24 V
V+ = 36 V
(Ω) ecnatsiseR-nO –r
ON
5
15
25
35
45
55
65
75
85
95
105
0246810 12
V - Analog Voltage (V)
COM
V+ = + 12 V
V- = 0 V
I or I = 1 mA
NONC
+ 85 °C
+ 25 °C
- 40 °C
1
10
100
1000
10000
100000
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperature (°C)
Leakage Current (pA)
I /I
NO(off) NC(off)
I
COM(on)
I
COM(off) V+ = + 16.5 V
V- = - 16.5 V
VISHAYn 1A0
Vishay Siliconix
DG449
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
Switching Time vs. Temperature and Single Supply Voltage
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Te mpe r ature (°C)
Supply Current (µA)
V+ = + 15 V
V- = - 15 V
I
GND
I-
I+
10 n
100 n
1 µ
10 µ
Supply Current (A)
Supply Voltage (V)
100K
10K1K
10010
10 m
1 m
100 µ
10M
1M
I+
I-
IGND
V+ = + 15 V
V- = - 15 V
0
40
120
160
Temperature (°C)
25
5- 15
- 35- 55 65
45
80
280
240
200
t , t (ns)
ONOFF
12510585
t V = + 12 V
OFF
t V = + 12 V
ON
Supply Current vs. Input Voltage
Switching Time vs. Temperature and Single Supply Voltage
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
1
10
Supply Current (µA)
Vin Input Voltage (V)
4
3 2
1 0 5
100
6 7 8 9 10 11 12 13 14 15
V+ = 12 V
V- = 0 V
V+ = 15 V
V- = - 15 V
+ 25 °C
- 110
- 100
- 80
- 70
Frequency (Hz)
1G
100M10M
1M100K
- 90
- 40
- 50
- 60
- 30
Loss, OIRR, X (dB)
- 20
- 10
0
10
OIRR
V± = + 15 V
LOSS
XTALK
V- = - 15 V
R = 50 Ω
L
TA LK
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
www.vishay.com
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Vishay Siliconix
DG449
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
TEST CIRCUITS
VO is the steady state output with the switch on.
Switching Threshold vs. Supply Voltage
0
1.0
1.5
V - Switching Threshold (V)
Supply Voltage (V)
20
1510
50 25
0.5
3.0
2.5
2.0
30
T
Charge Injection vs. Analog Voltage
- 50
- 40
- 30
- 20
- 10
0
Q - Charge Injection (pC)
V , V - Analog Voltage (V)
- 3
- 6
- 9
- 12- 15 03
50
40
30
20
10
151296
NONC
V+ = + 12 V
V ± = ± 15 V
Figure 1. Switching Time
CL (includes fixture and stray capacitance)
RL
RL + rON
VO = Vi
V-
IN
NO or NC COM
CL
35 pF
-15 V
GND
VO
Vi
V+
RL
300
+ 15 V
0 V
Logic
Input
Switch
Input
Switch
Output
3 V
50 %
0 V
VO
VS
tr < 20 ns
tf < 20 ns
tOFF
tON
90 %
Note: Logic input waveform is inverted for switches that have the
opposite logic sense.
Figure 2. Charge Injection
CL
1 nF
COM
Rgen
VO
V+
NO or NC
V-
3 V
IN
- 15 V
GND
+ 15 V
OFFONOFF
VO
VO
IN
Q = VO x CL
Vgen
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Vishay Siliconix
DG449
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73897.
V+
NO or NC
Rg = 50
COM
- 15 V
VS
GND -V– C
RL
IN
VO
0V, 2.4 V
Off Isolation = 20 log
VCOM
VNO/NC
+ 15 V
C
Figure 3. Off Isolation
Figure 4. Insertion Loss
NO or NC
V
S
V
O
0V
, 2.4 V IN R
L
COM
R
g
= 50
- 15 V
GND V- C
+ 15 V
V+
C
Figure 5. Channel ON/OFF Capacitances
IN
V+
- 15 V
V- C
,
Meter
HP4192A
Impedance
Analyzer
or Equivalent
+ 15 V
C
IN
COM
NO or NC
f = 1 MHz
GND C
0 V 2.4 V
C
e1
D
E1 E
eb
CL
CL
CLCL
A1
A2A
-A-
-A-0.10
E1
C0.20
DATUM A
NOTES:
1. All dimensions are in millimeters.
2. Foot length measured at intercept point between Datum A and
lead surface.
3. Package outline exclusive of mold flash and metal burr.
4. Package outline inclusive of solder plating.
5. No molding flash allowed on the top and bottom lead surface.
2
T
L
Package Information
Vishay Siliconix
Document Number: 72207
09-Apr-03 www.vishay.com
1
SOT−23 : 8−LEAD
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A0.90 1.27 1.45 0.035 0.05 0.057
A1 0.00 0.0762 0.15 0.000 0.003 0.006
A2 0.90 1.20 1.30 0.035 0.047 0.051
b0.22 0.30 0.38 0.009 0.012 0.015
C0.09 0.152 0.20 0.004 0.006 0.008
D2.80 2.9 3.00 0.11 0.114 0.118
E2.60 2.8 23.00 0.102 0.11 0.118
E1 1.50 1.65 1.75 0.059 0.065 0.069
e0.65 REF 0.026 REF
e1 1.95 REF 0.077 REF
L0.35 0.45 0.55 0.014 0.018 0.022
T0_4_8_0_4_8_
ECN: C-03085—Rev. A, 07-Apr-03
DWG: 5895
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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