TDA7294S Datasheet by STMicroelectronics

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TDA7294S
February 2005
1 Features
■VERY HIGH OPERATING VOLTAGE RANGE
(± 45V)
■MULTIPOWER BCD TECHNOLOGY
■DMOS POWER STAGE
■HIGH OUTPUT POWER (100W @ THD = 10%,
R
L
= 8Ω, V
S
= ±40V (MUSIC POWER)
■MUTING/STAND-BY FUNCTIONS
■NO SWITCH ON/OFF NOISE
■VERY LOW DISTORTION
■VERY LOW NOISE
■SHORT CIRCUIT PROTECTED (WITH NO
INPUT SIGNAL APPLIED)
■THERMAL SHUTDOWN
■CLIP DETECTOR
■MODULARITY (MORE DEVICES CAN BE
EASILY CONNECTED IN PARALLEL TO
DRIVE VERY LOW IMPEDANCES)
2 Description
The TDA7294S is a monolithic integrated circuit in
Multiwatt15 package, intended for use as audio
class AB amplifier in Hi-Fi field applications (Home
Stereo, self powered loudspeakers, Top class
TV). Thanks to the wide voltage range and to the
high out current capability it is able to supply the
highest power into both 4Ω and 8Ω loads. The built
in muting function with turn on delay simplifies the
remote operation avoiding switching on-off noises.
Parallel mode is made possible by connecting
more device through of pin11. High output power
can be delivered to very low impedance loads, so
optimizing the thermal dissipation of the system.
100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
Figure 2. Typical Application and Test Circuit
IN- 2
R2
680Ω
C2
22µF
C1 470nF IN+
R1 22K
3
R3 22K
-
+
MUTE
STBY
4
VMUTE
VSTBY
10
9
SGND
MUTE
STBY
R4 22K
THERMAL
SHUTDOWN
S/C
PROTECTION
R5 10K
C3 10µF C4 10µF
1
STBY-GND
C5
22µF
713
14
6
158
-Vs -PWVs
BOOTSTRAP
OUT
+PWVs+Vs
C9 100nF C8 1000µF
-Vs
D97AU805A
+Vs
C7 100nF C6 1000µF
BUFFER DRIVER
11
BOOT
LOADER
12
5VCLIP
CLIP DET
(*)
(*) see Application note
(**) for SLAVE function
(**)
Fi
gure 1.
P
ac
k
age
Table 1. Order Codes
Part Number Package
TDA7294S Multiwatt15 (Vertical)
Multiwatt15 (Vertical)
Rev. 2
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Figure 3. Pin Connection (Top view)
Table 2. Quick Reference Data
Table 3. Thermal Data
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
S
Supply Voltage Operating ±12 ±45 V
G
LOOP
Closed Loop Gain 26 45 dB
P
tot
Output Power V
S
= ± 40V; R
L
= 8Ω; THD = 10% 100 W
V
S
= ± 40V; R
L
= 8Ω; THD = 10% 100 W
SVR Supply Voltage Rejection 75 dB
Symbol Parameter Typ Max Unit
R
th j-case
Thermal Resistance Junction-case 1 1.5 °C/W
1
2
3
4
5
6
7
9
10
11
8
BUFFER DRIVER
MUTE
STAND-BY
-VS (SIGNAL)
+VS (SIGNAL)
BOOTSTRAP
CLIP AND SHORT CIRCUIT DETECTOR
SIGNAL GROUND
NON INVERTING INPUT
INVERTING INPUT
STAND-BY GND
TAB CONNECTED TO PIN 8
13
14
15
12
-VS (POWER)
OUT
+VS (POWER)
BOOTSTRAP LOADER
D97AU806
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TDA7294S
Table 4. Absolute Maximum Ratings
Symbol Parameter Value Unit
V
S
Supply Voltage (No Signal) ±50 V
V
1
V
STAND-BY
GND Voltage Referred to -V
S
(pin 8) 90 V
V
2
Input Voltage (inverting) Referred to -V
S
90 V
V
2
- V
3
Maximum Differential Inputs ±30 V
V
3
Input Voltage (non inverting) Referred to -V
S
90 V
V
4
Signal GND Voltage Referred to -V
S
90 V
V
5
Clip Detector Voltage Referred to -V
S
100 V
V
6
Bootstrap Voltage Referred to -V
S
100 V
V
9
Stand-by Voltage Referred to -V
S
100 V
V
10
Mute Voltage Referred to -V
S
100 V
V
11
Buffer Voltage Referred to -V
S
100 V
V
12
Bootstrap Loader Voltage Referred to -V
S
90 V
I
O
Output Peak Current 10 A
P
tot
Power Dissipation T
case
= 70°C 50 W
T
op
Operating Ambient Temperature Range 0 to 70 °C
T
stg
, T
j
Storage and Junction Temperature 150 °C
Table 5. Electrical Characteristcs
(Refer to the Test Circuit V
S
= ±35V, R
L
= 8Ω, G
V
= 30dB; R
g
= 50Ω; T
amb
= 25°C, f = 1kHz; unless
otherwise specified).
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
S
Operating Supply Range ±12 ±45 V
I
q
Quiescent Current 20 30 65 mA
I
b
Input Bias Current 500 nA
V
OS
Input Offset Voltage ±10 mV
I
OS
Input Offset Current ±100 nA
P
O
RMS Continuous Output Power d = 0.5%:
V
S
= ± 35V, R
L
= 8Ω
V
S
= ± 32V, R
L
= 6Ω
V
S
= ± 28V, R
L
= 4Ω
60
60
60
70
70
70
W
W
W
Music Power (RMS) (*)
∆t = 1s
d = 0.5%:
V
S
= ± 40V, R
L
= 8Ω
V
S
= ± 35V, R
L
= 6Ω
V
S
= ± 30V, R
L
= 4Ω (***)
100
100
100
W
W
W
d Total Harmonic Distortion (**) P
O
= 5W; f = 1kHz
P
O
= 0.1 to 20W; f = 20Hz to 20kHz
0.005
0.1
%
%
V
S
= ± 28V, R
L
= 4Ω:
P
O
= 5W; f = 1kHz
P
O
= 0.1 to 20W; f = 20Hz to 20kHz
0.01
0.1
%
%
I
MAX
Overcurrent Protection Threshold V
S
≤ ± 40V 6.5 A
SR Slew Rate 7 10 V/µs
G
V
Open Loop Voltage Gain 80 dB
G
V
Closed Loop Voltage Gain 26 30 45 dB
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Note (*):
MUSIC POWER CONCEPT
MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non lin-
earity) 1 sec after the application of a sinusoidal input signal of frequency 1KHz.
Note (**): Tested with optimized Application Board (see fig. 3)
Note (***): Limited by the max. allowable current.
Note (***): For supply voltage ≥35V, The device could be demaged in short circuit conditions when the input signal is applied
e
N
Total Input Noise A = curve
f = 20Hz to 20kHz
1µV
25µV
f
L
, f
H
Frequency Response (-3dB) P
O
= 1W 20Hz to 20kHz
R
i
Input Resistance 100 kΩ
SVR Supply Voltage Rejection f = 100Hz; V
ripple
= 0.5Vrms 60 75 dB
T
S
Thermal Shutdown 150 °C
STAND-BY FUNCTION (Ref: -V
S
or GND)
V
ST on
Stand-by on Threshold 1.5 V
V
ST off
Stand-by off Threshold 3.5 V
AT T
st-by
Stand-by Attenuation 70 90 dB
I
q st-by
Quiescent Current @ Stand-by 1 3 mA
MUTE FUNCTION (Ref: -V
S
or GND)
V
Mon
Mute on Threshold 1.5 V
V
Moff
Mute off Threshold 3.5 V
A
TTmute
Mute Attenuation 60 80 dB
CLIP DETECTOR
Duty Duty Cycle ( pin 5) THD = 1%; R
L
= 10KΩ to 5V 10 %
THD = 10%; R
L
= 10KΩ to 5V 30 40 50 %
I
CLEAK
P
O
= 50W 3 µA
Table 5. Electrical Characteristcs (continued)
(Refer to the Test Circuit V
S
= ±35V, R
L
= 8Ω, G
V
= 30dB; R
g
= 50Ω; T
amb
= 25°C, f = 1kHz; unless
otherwise specified).
Symbol Parameter Test Condition Min. Typ. Max. Unit
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TDA7294S
Figure 4. Typical Application P.C. Board and Component Layout (scale 1:1)
3 Application Suggestions (see Test and Application Circuits of the Fig. 2)
The recommended values of the external components are those shown on the application circuit of Figure
2. Different values can be used; the following table can help the designer.
Table 6. Application Suggestions
COMPONENTS SUGGESTED
VALUE PURPOSE LARGER THAN
SUGGESTED
SMALLER THAN
SUGGESTED
R1 (*) 22k INPUT RESISTANCE INCREASE INPUT
IMPEDANCE
DECREASE INPUT
IMPEDANCE
R2 680ΩCLOSED LOOP GAIN
SET TO 30dB (**)
DECREASE OF GAIN INCREASE OF GAIN
R3 (*) 22k INCREASE OF GAIN DECREASE OF GAIN
R4 22k ST-BY TIME
CONSTANT
LARGER ST-BY
ON/OFF TIME
SMALLER ST-BY ON/
ON/OFF TIME;
POP NOISE
R5 10k MUTE TIME
CONSTANT
LARGER MUTE
ON/OFF TIME
SMALLER MUTE
ON/OFF TIME
C1 0.47µF INPUT DC
DECOUPLING
HIGHER LOW
FREQUENCY
CUTOFF
C2 22µF FEEDBACK DC
DECOUPLING
HIGHER LOW
FREQUENCY
CUTOFF
C3 10µFMUTE TIME
CONSTANT
LARGER MUTE
ON/OFF TIME
SMALLER MUTE
ON/OFF TIME
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(*) R1 = R3 for pop optimization
(**) Closed Loop Gain has to be ≥ 26dB
(***) Multiply this value for the number of modular part connected
Figure 5. Slave function: pin 4 (Ref to pin 8 -V
S
)
Note:
If in the application, the speakers are connected via long wires, it is a good rule to add between the output
and GND, a Boucherot Cell, in order to avoid dangerous spurious oscillations when the speakers terminal
are shorted. The suggested Boucherot Resistor is 3.9Ω/2W and the capacitor is 1µF.
4 Introduction
In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers
able to match, with a low cost, the performance obtained from the best discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made extremely dif-
ficult by the occurence of 2
nd
breakdown phoenomenon. It limits the safe operating area (SOA) of the pow-
er devices, and, as a consequence, the maximum attainable output power, especially in presence of highly
reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and
layout complexity due to the need of sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are immune from sec-
ondary breakdown is highly desirable. The device described has therefore been developed in a mixed bi-
polar-MOS high voltage technology called BCDII 100.
4.1 Output Stage
The main design task in developping a power operational amplifier, independently of the technology used,
is that of realization of the output stage. The solution shown as a principle shematic by Fig.5 represents
the DMOS unity - gain output buffer of the TDA7294S.
COMPONENTS SUGGESTED
VALUE PURPOSE LARGER THAN
SUGGESTED
SMALLER THAN
SUGGESTED
C4 10µFST-BY TIME
CONSTANT
LARGER ST-BY
ON/OFF TIME
SMALLER ST-BY ON/
ON/OFF TIME;
POP NOISE
C5 22µFXN (***) BOOTSTRAPPING SIGNAL
DEGRADATION AT
LOW FREQUENCY
C6, C8 1000µFSUPPLY VOLTAGE
BYPASS
C7, C9 0.1µFSUPPLY VOLTAGE
BYPASS
DANGER OF
OSCILLATION
Table 6. Application Suggestions (continued)
MASTER
UNDEFINED
SLAVE
-V
S
+3V
-V
S
+1V
-V
S
D98AU821
1*:
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TDA7294S
This large-signal, high-power buffer must be capable of handling extremely high current and voltage levels
while maintaining acceptably low harmonic distortion and good behaviour over frequency response; more-
over, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above requirements,
allowing a simple and effective quiescent current setting.
Proper biasing of the power output transistors alone is however not enough to guarantee the absence of
crossover distortion.
While a linearization of the DC transfer characteristic of the stage is obtained, the dynamic be-haviour of
the system must be taken into account. A significant aid in keeping the distortion contributed by the final
stage as low as possible is provided by the compensation scheme, which exploits the direct connection of
the Miller capacitor at the amplifier’s output to introduce a local AC feedback path enclosing the output
stage itself.
4.2 Protections
In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the
device from short circuit or overload conditions. Due to the absence of the 2
nd
breakdown phenomenon,
the SOA of the power DMOS transistors is delimited only by a maximum dissipation curve dependent on
the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this
device combines a conventional SOA protection circuit with a novel local temperature sensing technique
which " dynamically" controls the maximum dissipation.
Figure 6. Principle Schematic of a DMOS unity-gain buffer.
Iref
M1
M2
MR
Vi
Vo
-VSS
+VDD
+
-A
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Obsolete Product(s) - Obsolete Product(s)
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Figure 7. Turn ON/OFF Suggested Sequence
Figure 8. Single Signal ST-BY/MUTE Control Circuit
PLAY
OFF
ST-BY
MUTE MUTE
ST-BY OFF
D98AU817
5V
5V
+Vs
(V)
+40
-40
VMUTE
PIN #10
(V)
VST-BY
PIN #9
(V)
-Vs
VIN
(mV)
IQ
(mA)
VOUT
(V)
1N4148
10K 30K
20K
10µF10µF
MUTE STBY
D93AU014
MUTE/
ST-BY
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TDA7294S
In addition to the overload protection described above, the device features a thermal shutdown circuit
which initially puts the device into a muting state (@ T
j
= 150°C) and then into stand-by (@ T
j
= 160°C).
Full protection against electrostatic discharges on every pin is included.
4.3 Other Features
The device is provided with both stand-by and mute functions, independently driven by two CMOS logic
compatible input pins.
The circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid
any kind of uncontrolled audible transient at the output.
The sequence that we recommend during the ON/OFF transients is shown by Figure 7.
The application of figure 5 shows the possibility of using only one command for both st-by and mute func-
tions. On both the pins, the maximum applicable range corresponds to the operating supply voltage.
5 Application Information
5.1 HIGH-EFFICIENCY
Constraints of implementing high power solutions are the power dissipation and the size of the power sup-
ply. These are both due to the low efficiency of conventional AB class amplifier approaches.
Here below (figure 9) is described a circuit proposal for a high efficiency amplifier which can be adopted
for both HI-FI and CAR-RADIO applications.
The TDA7294S is a monolithic MOS power amplifier which can be operated at 90V supply voltage (100V
with no signal applied) while delivering output currents up to ±6.5 A.
This allows the use of this device as a very high power amplifier (up to 100W as peak power with
T.H.D.=10 % and Rl = 4 Ohm); the only drawback is the power dissipation, hardly manageable in the
above power range.
The typical junction-to-case thermal resistance of the TDA7294S is 1 °C/W (max= 1.5 °C/W). To avoid
that, in worst case conditions, the chip temperature exceedes 150°C, the thermal resistance of the heat-
sink must be 0.038 °C/W (@ max ambient temperature of 50 °C).
As the above value is pratically unreachable; a high efficiency system is needed in those cases where the
continuous RMS output power is higher than 50-60 W.
The TDA7294S was designed to work also in higher efficiency way.
For this reason there are four power supply pins: two intended for the signal part and two for the power
part.
T1 and T2 are two power transistors that only operate when the output power reaches a certain threshold
(e.g. 20 W). If the output power increases, these transistors are switched on during the portion of the signal
where more output voltage swing is needed, thus "bootstrapping" the power supply pins (#13 and #15).
The current generators formed by T4, T7, zener diodes Z1, Z2 and resistors R7,R8 define the minimum
drop across the power MOS transistors of the TDA7294S. L1, L2, L3 and the snubbers C9, R1 and C10,
R2 stabilize the loops formed by the "bootstrap" circuits and the output stage of the TDA7294S.
By considering again a maximum average output power (music signal) of 20W, in case of the high effi-
ciency application, the thermal resistance value needed from the heatsink is 2.2°C/W (V
s
= ±45V and Rl=
8Ohm).
All components (TDA7294S and power transistors T1 and T2) can be placed on a 1.5°C/W heatsink, with
the power darlingtons electrically insulated from the heatsink.
Since the total power dissipation is less than that of a usual class AB amplifier, additional cost savings can
be obtained while optimizing the power supply, even with a high heatsink .
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5.2 BRIDGE APPLICATION
Another application suggestion is the BRIDGE configuration, where two TDA7294S are used. In this ap-
plication, the value of the load must not be lower than 8Ohm for dissipation and current capability reasons.
A suitable field of application includes HI-FI/TV subwoofers realizations.
The main advantages offered by this solution are:
– High power performances with limited supply voltage level.
– Considerably high output power even with high load values (i.e. 16 Ohm).
With Rl= 8 Ohm, Vs = ±25V the maximum output power obtainable is 150W, while with Rl=16 Ohm, Vs =
±40V the maximum Pout is 200W (Music Power).
6 APPLICATION NOTE: (ref. fig. 10)
6.1 Modular Application (more Devices in Parallel)
The use of the modular application lets very high power be delivered to very low impedance loads. The
modular application implies one device to act as a master and the others as slaves.
The slave power stages are driven by the master device and work in parallel all together, while the input
and the gain stages of the slave device are disabled, the figure below shows the connections required to
configure two devices to work together.
■The master chip connections are the same as the normal single ones.
■The outputs can be connected together without the need of any ballast resistance.
■The slave SGND pin must be tied to the negative supply.
■The slave ST-BY pin must be connected to ST-BY pin.
■The bootstrap lines must be connected together and the bootstrap capacitor must be increased: for N
devices the boostrap capacitor must be 22µF times N.
■The slave Mute and IN-pins must be grounded.
6.2 THE BOOTSTRAP CAPACITOR
For compatibility purpose with the previous devices of the family, the boostrap capacitor can be connected
both between the bootstrap pin (6) and the output pin (14) or between the boostrap pin (6) and the boot-
strap loader pin (12).
When the bootcap is connected between pin 6 and 14, the maximum supply voltage in presence of output
signal is limited to 80V, due the bootstrap capacitor overvoltage.
When the bootcap is connected between pins 6 and 12 the maximum supply voltage extend to the full
voltage that the technology can stand: 100V. This is accomplished by the clamp introduced at the boot-
strap loader pin (12): this pin follows the output voltage up to 100V and remains clamped at 100V. This
feature lets the output voltage swing up to a gate-source voltage from the positive supply (V
S
-3 to 6V)
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TDA7294S
Figure 9. High Efficiency Application Circuit
Figure 10. PCB and Component Layout of the fig. 9
3
1
4
13
7
815
2
14
6
10
R3 680 C11 22µF
L3 5µH
R18 270
R16
13K
C15
22µF
9
R12
13K
C13 10µF
R13 20K
C12 330nF
R15 10K
C14
10µF
R14 30K
D5
1N4148
PLAY
ST-BY
R17 270
L1 1µH
T1
BDX53A
T3
BC394
D3 1N4148
R4
270
R5
270
T4
BC393
T5
BC393
R6
20K
R7
3.3K
C16
1.8nF
R8
3.3K
C17
1.8nF
Z2 3.9V
Z1 3.9V
L2 1µH
R19 270
D4 1N4148
D2 BYW98100
R1
2
R2
2
C9
330nF
C10
330nF
T2
BDX54A T6
BC393
T7
BC394
T8
BC394
R9
270
R10
270
R11
20K
OUT
INC7
100nF
C5
1000µF
35V
C8
100nF
C6
1000µF
35V
C1
1000µF
63V
C2
1000µF
63V
C3
100nF
C4
100nF
+50V
+25V
D1 BYW98100
GND
-25V
-50V
D97AU807C
12
D6
1N4001
R20
20K
R21
20K
D7
1N4001
R22
10K
R23
10K
Pot
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Figure 11. PCB and Component Layout of the fig. 9
Figure 12. Modular Application Circuit
IN- 2
R2
680Ω
C2
22µF
C1 470nF IN+
R1 22K
3
R3 22K
-
+
MUTE
STBY
4
10
9
SGND
MUTE
STBY
R4 22K
THERMAL
SHUTDOWN
S/C
PROTECTION
R5 10K
C3 10µF
C4 10µF
1
STBY-GND
C5
47µF
713
14
6
158
-Vs -PWVs
BOOTSTRAP
OUT
+PWVs+Vs
C9 100nF C8 1000µF
-Vs
D97AU808C
+Vs
C7 100nF C6 1000µF
BUFFER
DRIVER
11
BOOT
LOADER
12
IN- 2
IN+ 3
-
+
MUTE
STBY
4
10
9
SGND
MUTE
THERMAL
SHUTDOWN
S/C
PROTECTION
1
STBY-GND
713
14
6
158
-Vs -PWVs
BOOTSTRAP
OUT
+PWVs+Vs
C9 100nF C8 1000µF
-Vs
+Vs
C7 100nF C6 1000µF
BUFFER
DRIVER
11
BOOT
LOADER
12
5CLIP DET
5
MASTER
SLAVE
C10
100nF
R7
2Ω
VMUTE
VSTBY
STBY
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TDA7294S
Figure 13. Modular Application P.C. Board and Component Layout (Component SIDE)
Figure 14. Modular Application P.C. Board and Component Layout (Solder SIDE)
3 3 D'HI
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7 Package Information
Figure 15. Multiwatt15 (Vertical) Mechanical Data & Package Dimensions
OUTLINE AND
MECHANICAL DATA
0016036 J
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.66 0.75 0.026 0.030
G 1.02 1.27 1.52 0.040 0.050 0.060
G1 17.53 17.78 18.03 0.690 0.700 0.710
H1 19.6 0.772
H2 20.2 0.795
L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0.87 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114
M 4.25 4.55 4.85 0.167 0.179 0.191
M1 4.73 5.08 5.43 0.186 0.200 0.214
S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152
Multiwatt15 (Vertical)
Obsolete Product(s) - Obsolete Product(s)
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8 Revision History
Table 7. Revision History
Date Revision Description of Changes
January 2003 1 First Issue in EDOCS (migrated from ST-Press DMS).
February 2005 2 Added “Clip Detector Electrical Characteristics” in the Table 5 (page 6).
Obsolete Product(s) - Obsolete Product(s)
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TDA7294S

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