BSP613P Datasheet by Infineon Technologies

Qﬁneon - Pb-free lead plating; RoHS compliant AN RDHS ,\ ‘ /—\ ﬂ ‘/ «9 Halogen Free Aglcuahhed TA D DD Res jmax A R G S TA J stg

2016-05-30Rev.2.8 Page 1

BSP613P

SIPMOS Small-Signal-Transistor Product Summary

V

DS

-60 V

R

DS(on)

0.13 Ω

I

D

-2.9 A

Feature

• P-Channel

• Enhancement mode

• Avalanche rated

• dv/dt rated

• Ideal for fast switching buck converter

PG-SOT223

Gate

pin1

Drain

pin 2,4

Source

pin 3

Type Package Tape and reel

BSP613P PG-SOT223 H6327: 1000pcs/r.

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

-2.9

-2.3

A

Pulsed drain current

TA=25°C

ID puls -11.6

Avalanche energy, single pulse

ID=2.9 A , VDD=-25V, RGS=25Ω

EAS 150 mJ

Avalanche energy, periodic limited by T

jmax

E

AR

0.18

Reverse diode dv/dt

IS=2.9A, VDS=-48V, di/dt=-200A/µs, T

jmax=150°C

dv/dt6kV/µs

Gate source voltage V

GS

±20 V

Power dissipation

TA=25°C

Ptot 1.8 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

NonD r y B S P 613 P

Packaging Marking

• Qualified according to AEC Q101

ESD Class

JESD22-A114-HBM

Class 1c

•

HalogenfreeaccordingtoIE C 61249221

@ineon, thJA

2016-05-30Rev.2.8 Page 2

BSP613P

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

RthJS - - 19 K/W

Thermal resistance, junction - ambient, leaded RthJA -100 -

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

-

100

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -60 - - V

Gate threshold voltage, VGS = VDS

ID=-1mA

VGS(th) -2.1 -3 -4

Zero gate voltage drain current

VDS=-60V, VGS=0, Tj=25°C

VDS=-60V, VGS=0, Tj=125°C

IDSS

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

VGS=-20V, VDS=0

IGSS --10 -100 nA

Drain-source on-state resistance

VGS=-10V, ID=2.9A

RDS(on) -0.11 0.13 Ω

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Qf Ineon, iss 055 rss Mon) fawn) (p‘ateau) DD GS

2016-05-30Rev.2.8 Page 3

BSP613P

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs |VDS|≥2*|ID|*RDS(on)max

,

ID=2.9A

2.7 5.4 -S

Input capacitance C

iss

VGS=0, VDS=-25V,

f=1MHz

-715 875 pF

Output capacitance C

oss

-230 295

Reverse transfer capacitance C

rss

-90 120

Turn-on delay time td(on) VDD=-30V, VGS=-10V,

ID=2.9A, RG=2.7Ω

-6.7 17 ns

Rise time t

r

-9 18

Turn-off delay time td(off) -26 52

Fall time tf-7 19

Gate Charge Characteristics

Gate to source charge Q

gs

VDD=-48V, ID=2.9A -2.5 3.8 nC

Gate to drain charge Q

gd

-8.9 14.3

Gate charge total QgVDD=-48V, ID=2.9A,

VGS=0 to -10V

-22 33

Gate plateau voltage V(plateau) VDD=-48V, ID=2.9A --3.9 -V

Reverse Diode

Inverse diode continuous

forward current

ISTA=25°C - - -2.9 A

Inv. diode direct current, pulsed I

SM

- - -11.6

Inverse diode forward voltage VSD VGS=0V, |IF| = |IS|--0.8 -1.1 V

Reverse recovery time t

rr

VR=-30V, |IF| = |IS|,

diF/dt=100A/µs

-37.2 79 ns

Reverse recovery charge Qrr -59.8 112 nC

@ineon,

2016-05-30Rev.2.8 Page 4

BSP613P

1 Power Dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

W

1.9

Ptot

2 Drain current

ID = f (TA)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 °C 160

TA

0

0.4

0.8

1.2

1.6

2

2.4

A

3.2

ID

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

-10 -1 -10 0 -10 1 -10 2

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

ID

R DS(on) = V DS / I

D

DC

10 ms

1 ms

tp = 100.0

4 Transient thermal impedance

ZthJC = f(tp)

parameter: D = tp / T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

K/W

ZthJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

/ @ineon,

2016-05-30Rev.2.8 Page 5

BSP613P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj =25°C

00.5 11.5 22.5 33.5 4V5

-VDS

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

A7

-I D

Vgs=3.5V

Vgs = 4V

Vgs = 4.5V

Vgs = 5V

Vgs = 6V

Vgs = 10V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS; Tj = 25 °C

01234A6

-I

D

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

Ω

0.5

RDS(on)

Vgs = 4V Vgs = 4,5V

Vgs = 5V

Vgs = 6V

Vgs = 10V

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|≥ 2 x |ID

| x RDS(on)max

parameter: Tj = 25 °C

0 1 2 3 4 5 V7

-VGS

0

1

2

3

4

5

6

A

8

ID

8 Typ. forward transconductance

gfs = f(ID

)

parameter: Tj = 25 °C

012345678A10

-I

D

0

1

2

3

4

5

6

S

8

gfs

@ineon, Q \ “ ~ ~ 8% \ >0 \\ \ \ \\\ .0 76 4»

2016-05-30

Rev.2.8 Page 6

BSP613P

9 Drain-source on-state resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = -2.9 A,

V

GS = -10 V

-60 -20 20 60 100 °C 180

T

j

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.34

R

DS(on)

typ

98%

10 Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = -1 mA

-60 -20 20 60 100 °C 180

T

j

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

V

GS(th)

2%

-60 -20 20 60 100 °C 180

T

j

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

V

GS(th)

98%

-60 -20 20 60 100 °C 180

T

j

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

V

GS(th)

typ

-60 -20 20 60 100 °C 180

T

j

0.0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

V

-5.0

V

GS(th)

11 Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS=0V,

f

=1 MHz

0 -5 -10 -15 -20 -25 -30 V-40

V

DS

1

10

2

10

3

10

4

10

pF

C

iss

C

oss

C

rss

12 Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0

V

SD

-1

-10

0

-10

1

-10

2

-10

A

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

/ @ineon,

2016-05-30Rev.2.8 Page 7

BSP613P

13 Typ. avalanche energy

EAS = f (Tj)

par.: ID = 2.9 A , VDD = -25 V, RGS = 25 Ω

25 45 65 85 105 125 ºC 165

Tj

0

20

40

60

80

100

120

mJ

160

EAS

14 Typ. gate charge

VGS = f (QG), parameter: VDS ; Tj = 25 °C

ID = 2.9 A pulsed;

0 4 8 12 16 20 24 28 nC 34

|QG|

0

2

4

6

8

10

12

V

16

VGS

0.2 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

Tj

-54

-56

-58

-60

-62

-64

-66

-68

V

-72

V(BR)DSS

infineon 65m 1 am m4 7 M“ 7 mmx »‘ ‘ 7 7‘ o ‘ ‘ m 7 7 7 7 7 7 7 E 1 Z 2 m I I2 3 o .3 *025’LN 07:01 7 4% ﬁozswaﬂ 3.5 A 1 < ‘.\="" ‘="" n="">

Package Outline SOT-223

Footprint

Soldering type: Reflow soldering Soldering type: Wave soldering

Tape and Reel

Dimensions in mm

BSP613P

2016-05-30Rev.2.8 Page 8

(imeon

9

-60VSIPMOSSmallSignalTransistor

BSP613P

Rev.2.8,2016-06-13

RevisionHistory

BSP613P

Revision:2016-06-13,Rev.2.8

Previous Revision

Revision Date Subjects (major changes since last revision)

2.8 2016-06-13 Insert package outlines

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,

EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,

ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,

PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,

SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

WeListentoYourComments

Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously

improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:

erratum@infineon.com

Publishedby

InfineonTechnologiesAG

81726München,Germany

AllRightsReserved.

LegalDisclaimer

Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With

respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication

ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout

limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Information

Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon

TechnologiesOffice(www.infineon.com).

Warnings

Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,

pleasecontactthenearestInfineonTechnologiesOffice.

TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or

automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa

failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand

aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare

intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis

reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

BSP613P Datasheet by Infineon Technologies

Products related to this Datasheet