STGW(A,T)80H65FB Datasheet by STMicroelectronics

View All Related Products | Download PDF Datasheet
I 'l 1ire.ougmemed su mu
This is information on a product in full production.
June 2014 DocID026401 Rev 1 1/18
18
STGW80H65FB, STGWA80H65FB,
STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 1.6 V (typ.) @ I
C
= 80 A
•Tight parameter distribution
•Safe paralleling
•Low thermal resistance
Applications
•Photovoltaic inverters
•High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
TO-247
1
23
TO-3P
12
3
TAB
TO-247 long leads
C (2 or TAB)
E (3)
G (1)
Table 1. Device summary
Order code Marking Package Packaging
STGW80H65FB GW80H65FB TO-247 Tube
STGWA80H65FB GWA80H65FB TO-247 long leads Tube
STGWT80H65FB GWT80H65FB TO-3P Tube
www.st.com
Contents STGW80H65FB, STGWA80H65FB, STGWT80H65FB
2/18 DocID026401 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1 TO-247, STGW80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-247 long leads, STGWA80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-3P, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
é]
DocID026401 Rev 1 3/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 650 V
I
C
Continuous collector current at T
C
= 25 °C 120
(1)
1. Current level is limited by bond wires.
A
I
C
Continuous collector current at T
C
= 100 °C 80 A
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25 °C 469 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case 0.32 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4/18 DocID026401 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 650 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 80 A 1.6 2
V
V
GE
= 15 V, I
C
= 80 A
T
J
= 125 °C 1.8
V
GE
= 15 V, I
C
= 80 A
T
J
= 175 °C 1.9
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 650 V 100 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
- 10524 - pF
C
oes
Output capacitance - 385 - pF
C
res
Reverse transfer
capacitance -215-pF
Q
g
Total gate charge V
CC
= 520 V, I
C
= 80 A,
V
GE
= 15 V, see Figure 23
-414-nC
Q
ge
Gate-emitter charge - 78 - nC
Q
gc
Gate-collector charge - 170 - nC
é]
DocID026401 Rev 1 5/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 22
-84-ns
t
r
Current rise time - 52 - ns
(di/dt)
on
Turn-on current slope - 1270 - A/µs
t
d(off)
Turn-off delay time - 280 - ns
t
f
Current fall time - 31 - ns
E
on(1)
1. Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80H65DFB
Turn-on switching losses - 2.1 - mJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 1.5 - mJ
E
ts
Total switching losses - 3.6 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 22
-77-ns
t
r
Current rise time - 51 - ns
(di/dt)
on
Turn-on current slope - 1270 - A/µs
t
d(off)
Turn-off delay time - 328 - ns
t
f
Current fall time - 30 - ns
E
on(1)
Turn-on switching losses - 4.4 - mJ
E
off(2)
Turn-off switching losses - 2.1 - mJ
E
ts
Total switching losses - 6.5 - mJ
Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
6/18 DocID026401 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics (T
J
= 25°C) Figure 3. Output characteristics (T
J
= 175°C)
I
C
60
40
20
001V
CE
(V)
(A)
4
80
23
100
V
GE
=15V
120
140
9V
11V
GIPD130920131606FSR
I
C
60
40
20
001V
CE
(V)
(A)
4
80
23
100
V
GE
=15V
120
140
9V
11V
7V
GIPD160920130919FSR
Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature
I
C
60
40
20
067V
GE
(V)
(A)
10
80
89
100
T
J
=175°C
120
140
-40°C
11
25°C
V
CE
=10V
GIPD160920130924FSR
I
C
60
40
20
0
025 T
J
(°C)
(A)
100
80
50 75
100
120
125 150
V
GE
= 15 V, T
J
= 175 °C
GIPD160920130941FSR
Figure 6. Power dissipation vs. case
temperature Figure 7. V
CE(sat)
vs. junction temperature
P
tot
150
100
50
0025 T
J
(°C)
(W)
100
200
50 75
250
300
350
125 150
400
450
V
GE
= 15 V, T
J
= 175 °C
GIPD160920130948FSR
V
CE(sat)
1.8
1.6
1.4
1.2
-50 T
J
(°C)
(V)
100
2
050
2.2
2.4
2.6
150
V
GE
= 15V
I
C
= 160A
I
C
= 80A
I
C
= 40A
GIPD160920130952FSR
E]
DocID026401 Rev 1 7/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Figure 8. V
CE(sat)
vs. collector current Figure 9. Forward bias safe operating area
V
CE(sat)
1.4
1.2
1
0.80I
C
(A)
(V)
60
1.6
20 40
1.8
2
2.2
80
V
GE
= 15V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
2.4
2.6
100 120 140
GIPD160920131029FSR
I
C
100
10
1
0.11V
CE
(V)
(A)
10 100
10μs
100μs
1ms
Single pulse
Tc= 25°C, T
J
≤ 175°C
V
GE
= 15V
GIPD160920131115FSR
Figure 10. Capacitance variations Figure 11. Normalized V
(BR)CES
vs. junction
temperature
C
1000
100
10
0.1 V
CE
(V)
(pF)
110
C
ies
C
oes
C
res
100
10000
GIPD160920131200FSR
V
(BR)CES
1.1
1
0.9
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 2mA
GIPD160920131144FSR
Figure 12. Normalized V
GE(th)
vs. junction
temperature Figure 13. Gate charge vs. gate-emitter voltage
V
GE
0.8
0.7
0.6
-50 T
J
(°C)
(norm)
0 50 100 150
0.9
1
1.1 I
C
= 1mA
GIPD160920131151FSR
V
GE
4
2
0
0Q
g
(nC)
(V)
100 200 300 400
6
8
10
12
14
16
I
C
= 80A
V
CC
= 520V
GIPD160920131156FSR
Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
8/18 DocID026401 Rev 1
Figure 14. Switching loss vs temperature Figure 15. Switching loss vs gate resistance
E
1500
1000
25 T
J
(°C)
(μJ)
50 75 100 125
2000
2500
3000
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, R
g
= 10Ω
150
E
OFF
E
ON
175
0
3500
4000
4500
GIPD160920131504FSR
E
2600
1800
1000
2R
G
(Ω)
(μJ)
610
14 18
3400
4200
5000
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, T
J
= 175°C
E
ON
E
OFF
GIPD160920131208FSR
Figure 16. Switching loss vs collector current Figure 17. Switching loss vs collector emitter
voltage
E
2000
1000
0
0I
C
(A)
(μJ)
20 40 60 80
3000
4000
5000
V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, T
J
= 175°C
100 120 140
6000
7000
8000
9000
E
ON
E
OFF
GIPD160920131436FSR
E
3000
2000
1000
150 V
CE
(V)
(μJ)
200 250 300 350
4000
5000
6000 T
J
= 175°C, V
GE
= 15V
I
C
= 80A, R
g
= 10Ω
400
E
OFF
E
ON
450
GIPD160920131524FSR
Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
t
100
10
1I
C
(A)
(ns)
20 40 60 80
T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, R
g
= 10Ω
100
t
f
t
don
120
t
r
t
doff
140
GIPD160920131533FSR
t
100
10 R
g
(Ω)
(ns)
48
T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, I
C
= 80A
12
t
r
t
don
t
f
t
doff
16 20
GIPD160920131539FSR
é]
DocID026401 Rev 1 9/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Figure 21. Thermal impedance
Figure 20. Collector current vs. switching
frequency
40
60
80
100
120
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =10
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
140
160
GIPD260520141426FSR
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
1000 v, =zov=vW \G=CONSI n 70 nu!
Test circuits STGW80H65FB, STGWA80H65FB, STGWT80H65FB
10/18 DocID026401 Rev 1
3 Test circuits
Figure 22. Test circuit for inductive load
switching Figure 23. Gate charge test circuit
Figure 24. Switching waveform
AM01504v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
flP fl N \fi L91 A1 %%r\/i”?fl
DocID026401 Rev 1 11/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1 TO-247, STGW80H65FB
Figure 25. TO-247 drawing
0075325_G
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
12/18 DocID026401 Rev 1
Table 7. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
H54 TiS/NK PLANE BACK VIE W
DocID026401 Rev 1 13/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data
4.2 TO-247 long leads, STGWA80H65FB
Figure 26. TO-247 long leads drawing
8463846_A_F
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
14/18 DocID026401 Rev 1
Table 8. TO-247 long leads mechanical data
Dim. mm
Min. Typ. Max.
A4.905.005.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b1.16 1.26
b2 3.25
b3 2.25
c0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e5.345.445.54
L 19.80 19.92 20.10
L1 4.30
P3.503.603.70
Q5.60 6.00
S6.056.156.25
é] SEA TING PLANE IP E A1 i 51 £2 . I I I 00] ' ‘ — 4w- a} I ‘7 IF] I L2 01 I I LI _ A2 7 I . I ‘ !b2 . I L | b1(2x) I I I | I I I I b(3x} ——c (2X)
DocID026401 Rev 1 15/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data
4.3 TO-3P, STGWT80H65FB
Figure 27. TO-3P drawing
8045950_B
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
16/18 DocID026401 Rev 1
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4
é]
DocID026401 Rev 1 17/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Revision history
5 Revision history
Table 10. Document revision history
Date Revision Changes
13-Jun-2014 1 Initial release.
STGW80H65FB, STGWA80H65FB, STGWT80H65FB
18/18 DocID026401 Rev 1
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

Products related to this Datasheet

IGBT 650V 120A 469W TO-247
IGBT 650V 120A 469W TO247
IGBT 650V 120A 469W TO3P-3L