0N Semiconductor®
speed serial digital www.0nsem com
differential data line
supply input such as
plied in a small
Features
- Highly lntegrated Common Mode Filter (CMF) with ESD Protection
provides protection and EMl Reduction for - stems ~ing high speed _,
Serial Data Lines with cost and space savings over Discrete Solutions
I Large Differential Mode Bandwidth with Cutoff Frequency > 2 Gl-lz _
- l—ligh Common Mode Stop Band Attenuation: >25 dB at 700 MHz,
>30 dB at 800 MHZ Typical
I Provides ESD Protection to lEnylle—‘I—Z Level 4, :12 kV Contact
U:
Discharge 3 warm:
I Low Channel Input Capacitance provides Superior Impedance CASE 511BN
Matching Performance l
- Low Profile Package with Small Footprint in WDFNS 2.0 mm length
x 2.2 mm width x 0.75 mm height Pb—Free Package
- sz Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC—Qlt)1 Qualified and
PPAP Capable
I These Devices are Pb—Free, Halogen FrCc/BFR Free and are ROHS
Compliant
Applications
I USBZD and other High Speed Differential Data Lines in Mobile
Phones, Digital Still Cameras, and Automotive interfaces
I MIPI D—PHY
ORDERING INFOH
Devlce Package
EMI2t21M1'I’AG WDFNa
th-Free)
m Seuteamuetatesuparouo traumas. LLC 2m 1 Publ
May, 2019 — Rev. :5
© Semiconductor Components Industries, LLC, 2013
May, 2019 − Rev. 3
1Publication Order Number:
EMI2121MT/D
EMI2121, SZEMI2121
Single Pair Common Mode
Filter with ESD Protection
Description
The EMI2121 is an integrated common mode filter providing both
ESD protection and EMI filtering for high speed serial digital
interfaces such as USB2.0.
The EMI2121 provides EMI filtering for one differential data line
pair and ESD protection for one data pair plus a supply input such as
USB2.0 Vbus or USB ID pin. It is supplied in a small
RoHS−compliant WDFN8 package.
Features
•Highly Integrated Common Mode Filter (CMF) with ESD Protection
provides protection and EMI Reduction for systems using high speed
Serial Data Lines with cost and space savings over Discrete Solutions
•Large Differential Mode Bandwidth with Cutoff Frequency > 2 GHz
•High Common Mode Stop Band Attenuation: >25 dB at 700 MHz,
>30 dB at 800 MHz Typical
•Provides ESD Protection to IEC61000−4−2 Level 4, ±12 kV Contact
Discharge
•Low Channel Input Capacitance provides Superior Impedance
Matching Performance
•Low Profile Package with Small Footprint in WDFN8 2.0 mm length
x 2.2 mm width x 0.75 mm height Pb−Free Package
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•USB2.0 and other High Speed Differential Data Lines in Mobile
Phones, Digital Still Cameras, and Automotive interfaces
•MIPI D−PHY
Device Package Shipping†
ORDERING INFORMATION
EMI2121MTTAG WDFN8
(Pb−Free)
3000/Tape & Reel
WDFN8
CASE 511BN
MARKING
DIAGRAM
www.onsemi.com
8
7
3,4,5
SIMPLIFIED SCHEMATIC
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
PIN CONNECTIONS
C2 = Specific Device Code
M = Date Code
G= Pb−Free Device
C2 MG
G
1
Out_1+
Out_1−
In_1+
In_1−
VDD/ID
GND
GNDGND
18
27
36
45
(Top View)
GND
Internal
(ASIC)
External
(Connector)
2
6
1
SZEMI2121MTTAG WDFN8
(Pb−Free)
3000/Tape & Reel
1
8
www onsem' com
EMI2121, SZEMI2121
www.onsemi.com
2
PIN DESCRIPTION
Pin No. Pin Name Type Description
1 In_1+ I/O CMF Channel 1+ to Connector (External)
2In_1−I/O CMF Channel 1− to Connector (External)
8 Out_1+ I/O CMF Channel 1+ to ASIC (Internal)
7Out_1−I/O CMF Channel 1− to ASIC (Internal)
6 VDD/IDI/O Supply Protection to Connector (External)
3,4,5 GND GND Ground
MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Parameter Symbol Value Units
Operating Temperature Range TOP −40 to +85 °C
Storage Temperature Range TSTG −65 to +150 °C
Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 Seconds) TL260 °C
DC Current per Line ILINE 100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Channel Leakage Current ILEAK TA = 25°C, VIN = 5 V, GND = 0 V 1.0 mA
Channel Negative Voltage VFTA = 25°C, IF = 10 mA 0.1 1.5 V
Channel Input Capacitance to ground
(Pins 1,2,4,5 to Pins 3,8)
CIN TA = 25°C, At 1 MHz, GND = 0 V,
VIN = 1.65 V
0.8 1.3 pF
Channel Resistance (Pins 1−16, 2−15, 4−13,
5−12, 7−10 and 9−9)
Rch 8.0 W
Differential Mode Cut*Off Frequency f3dB 50 W source and load termination 2.0 GHz
Common Mode Stop Band Attenuation Fatten @ 800 MHz 30 dB
In−system ESD Withstand Voltage
a) Contact discharge per IEC 61000−4−2
standard, Level 4 (External Pins)
b) Contact discharge per IEC 61000−4−2
standard, Level 1 (Internal Pins)
VESD (Notes 1 and 2)
±12
±2
kV
TLP Clamping Voltage (See Figure 9) VCL Forward IPP = 8 A
Forward IPP = 12 A
Reverse IPP = −8 A
Reverse IPP = −12 A
13
16
−6
−8.5
V
V
V
V
Reverse Working Voltage VRWM (Note 3) 5.0 V
Breakdown Voltage VBR IT = 1 mA; (Note 4) 5.5 9.0 V
Maximum Peak Pulse Current (Pin 6 to GND) IPP 8x20 ms Waveform 12 A
Clamping Voltage (Pin 6 to GND) VCIPP = 5 A 10 V
Dynamic Resistance
Positive Transients
Negative Transients
RDYN TA = 25C, IPP=1 A, tP= 8/20 us,
Any I/O to GND 0.67
0.59
W
W
1. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
4. VBR is measured at pulse test current IT.
I/02| .
Nelwork Analyzer
Normal (Drfferentlal) M
Figure 1. Normal (Differenlia
Configuration
|
|
_ |
0: .WW T
‘02
a: / 'W *
|
Dlflerenuar slgnar Dnver and |
Transmissron Lme EMI2 I
J
Figure 2. Applicat
www.cnsemi.com
a
EMI2121, SZEMI2121
www.onsemi.com
3
Figure 1. Normal (Differential) Mode Test
Configuration
Network Analyzer
I/O 8
I/O 7
I/O 1
I/O 2
Normal (Differential) Mode
Figure 2. Application Circuit
I/O 8
I/O 7
I/O 1
I/O 2
Differential Signal Buffer and
Transmission Line
Differential Signal Driver and
Transmission Line EMI2121MT
EMI2121MT
1
2
3
4
SDD21 (dB)
sum (as)
357
Ac
Frequency (Hz)
‘ES
3E2
IE7
Frequency (Hz)
amsnnm
dB(SDD22)
\mpedance (Ohms)
1E27
IEli
Frequency (Hz)
W
IE7
Frequency (Hz)
EMI2121, SZEMI2121
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 3. Differential Mode Attenuation vs.
Frequency (Zdiff = 100 W)
Figure 4. Common Mode Attenuation vs.
Frequency (Zcomm = 50 W)
Figure 5. Differential Return Loss vs. Frequency
(Zdiff=100 W)
Figure 6. Differential Impedance vs. Frequency
(Zdiff=100 W)
Figure 7. EMI2121 Measured Eye Diagram @ 480 Mbps
35
30
15
In
3
‘5 15 7
g ”mm
a —TLPEA
1“ —TLP16A
5
u ‘
s
720 a 20 Ah so so mu m
fimelni]
14 714
12 711 \
f/
m 710 /
s 1/ z 43
s
E’
E 5 / a '5 /
A 4
1‘! /
1 2
f /
o o /
a m 12 1A 15 13 u 72 4 a 43 710
Volt“: (v) anlue m
www.cnseml.com
5
EMI2121, SZEMI2121
www.onsemi.com
5
Transmission Line Pulse (TLP) Measurements
Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a
100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in
Figure 8. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s
of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 9 where an 8 kV
IEC61000−4−2 current waveform is compared with TLP current pulses at 8 and 16 A. A TLP curve shows the voltage at which
the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves for
the EMI2121 are shown in Figure 10.
Figure 8. Simplified Schematic of a Typical TLP System
DUT
VM
IM
L
10 MW
VC
SW ÷
Oscilloscope
Attenuator
50 W Coax
Cable
50 W Coax Cable
Figure 9. Comparison Between 8 kV IEC61000−4−2 and 8 A and 16 A TLP Waveforms
0
2
4
6
8
10
12
14
024681012141618
C
u
r
r
e
n
t
(
A
)
Voltage (V)
-14
-12
-10
-8
-6
-4
-2
0
-10-8-6-4-20
Current (A)
Voltage (V)
Figure 10. Positive and Negative TLP Waveforms
TV
|:I|:I|:I|:I
EIEIEIEIO
EIEIEIEIEI
E c. 0
El 308
El
a O:-
EMI2121, SZEMI2121
www.onsemi.com
6
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low
a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per
the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones
or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor
has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD
pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these screenshots and how to interpret them please refer to On Semiconductor
Application Notes AND8307/D and AND8308/D.
IEC61000−4−2 Spec.
Level
Test Volt-
age (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
Ipeak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
tP = 0.7 ns to 1 ns
50 W
50 W
Cable
TVS Oscilloscope
ESD Gun
Figure 11. Diagram of ESD Test Setup
Figure 12. 8 x 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
mm;
11
115'
nsz :2
LT
uto
CAM
uus
C
70be n:
L? fl]
NOTE:
. D21
1 I
[
SIDE VIEWA TE
m
1L” fifl +
jEflfi l-III 1 r
L__§[\ f
BOTTOM VIEW m
EMI2121, SZEMI2121
www.onsemi.com
9
PACKAGE DIMENSIONS
WDFN8, 2.2x2, 0.5P
CASE 511BN
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
AB
E
D
D2
E2
BOTTOM VIEW
be
7X
0.10 B
0.05
AC
CNOTE 3
2X 0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X 0.10 C
9X
A
A3
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
14
58
DIM MIN MAX
MILLIMETERS
A0.70 0.80
A1 0.00 0.05
b0.15 0.25
D2.20 BSC
D2 0.34 0.54
E2.00 BSC
E2 0.60 0.80
e0.50 BSC
L1 0.05 0.15
L2 0.30 0.50
L3 0.15 0.25
4X
1.00
0.80
1
0.30
0.50
PITCH
2.30
7X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
L1
DETAIL A
OPTIONAL
CONSTRUCTIONS
L
DETAIL B
MOLD CMPDEXPOSED Cu
OPTIONAL
CONSTRUCTIONS
DETAIL B
DETAIL C
PACKAGE
OUTLINE
A3 0.20 REF
NOTE 4 A1
e/2
0.10 B
AC
0.10 BAC
0.54
A1
A3
b1 0.25 0.35
L0.75 0.95
DETAIL C
L3
b1
L2
2X
DETAIL A
4X
SOLDERING FOOTPRINT*
0.40
0.60
4X
EMI2121MT/D
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