ZXM62P02E6 Datasheet by Diodes Incorporated

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ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P02E6
ADVANCE INFO R MA T I O N
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON)
ID
TA = +25°C
-20V
200m @ VGS= -4.5V
-2.3A
Description
This new generation of high density MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with
fast switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
Applications
DC - DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Features and Benefits
Low On-resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.Green Device (Note 3)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
Ordering Information (Note 4)
Part Number
Reel Size (inch)
Tape Width (mm)
Quantity Per Reel
ZXM62P02E6TA
7
8
3,000
ZXM62P02E6TC
13
8
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
C
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
e3
Equivalent Circuit
Top View
SOT26
D
D
D
D
SG
Pin Out
Top View
2P02 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
m5. ZXM62P02E6
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P02E6
ADVANC E INF ORMA TIO N
Absolute Maximum Ratings
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
12
V
Continuous Drain Current
VGS = -4.5V
TA = +25°C (Note 6)
ID
-2.3
A
TA = +70°C (Note 6)
-1.7
Pulsed Drain Current
(Note 7)
IDM
-13
A
Continuous Source Current (Body Diode)
(Note 6)
IS
-1.9
A
Pulsed Source Current (Body Diode)
(Note 7)
ISM
-13
A
Power Dissipation at TA = +25°C
Linear Derating Factor
(Note 5)
PD
1.1
8.8
W
mW/C
Power Dissipation at TA = +25°C
Linear Derating Factor
(Note 6)
PD
1.7
13.7
W
mW/C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Thermal Resistance
Characteristic
Symbol
Value
Unit
Junction to Ambient
(Note 5)
RθJA
113
C/W
(Note 6)
73
Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC
Drain-Source Breakdown Voltage
BVDSS
-20
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 12V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
-0.7
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
0.2
VGS = -4.5V, ID = -1.6A
0.375
VGS = -2.7V, ID = -0.8A
Forward Transconductance (Note 10)
gfs
1.5
S
VDS = -10V, ID = -0.8A
DYNAMIC (Note 10)
Input Capacitance
Ciss
320
pF
VDS = -15V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
150
pF
Reverse Transfer Capacitance
Crss
75
pF
SWITCHING (Notes 9 and10)
Total Gate Charge
Qg
5.8
nC
VDS = -16V, VGS = -4.5V
ID = -1.6A
(Refer to test circuit)
Gate-Source Charge
Qgs
1.25
nC
Gate-Drain Charge
Qgd
2.8
nC
Turn-On Delay Time
tD(ON)
4.1
ns
VDD = -10V, ID = -1.6A, RG = 6,
RD = 6.1
(Refer to test circuit)
Turn-On Rise Time
tR
15.4
ns
Turn-Off Delay Time
tD(OFF)
12.0
ns
Turn-Off Fall Time
tF
19.2
ns
SOURCE-DRAIN DIODE
Diode Forward Voltage (Note 8)
VSD

-0.95
V
TJ= +25°C, IS=-1.6A,
VGS=0V
Reverse recovery time (Note 10)
tRR

22.5

ns
TJ= +25°C, IF=-1.6A,
di/dt= 100A/µs
Reverse recovery charge (Note 10)
QRR

10.4

nC
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t 5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
8. Measured under pulsed conditions. Width= 300µs; duty cycle 2%.
9. Switching characteristics are independent of operating junction temperatures.
10. For design aid only, not subject to production testing.
Thermal Resistance (“C/W) ‘ID‘ Drain Current (A) -|D - Drain Current (A) ' 0.1 20 0 0 0001 0.001 100 1D 0.1 1 l0 »Vps - Drain-Source Voltage 1V) Sale Operating Area 100 mm Nur- 4m 0.01 Pulse Width (5) Transient Thermal Impedance 0.1 I In 100 ill I 10 -VDS - Drain-Source Voltage (V) Output Characteristics 100 Thermal Resistance (cc/w) Max Power Dissipation (Watts) -In - Drain Current (A) 1.5 0.5 o 20 ‘0 so 80100120 T - Temperature 1° ) Derating Curve no 160 I20 Helm Nm: 1.) I00 40 0:0 20 mar 30001 0 001 001 0,1 I ll) Pulse Width (5) Transient Thermal Impedance I00 1000 100 ll) 0.1 0.1 1 l0
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P02E6
ADVANC E INF ORMA TIO N
m5. 2 1.6 vns:.mv g | R u nDsw-n g > "‘ vas.15v .. 2: mm“ c c .2 / B 3 ' ~ g g 10 \\/ m . /\ a sz-vns E n: as / \ any». _ g ' vssmn n .,, . ' = 0.5 D a —. E 0 0.4 2 -1on -5a a so Ian 15:2 200 I LE 2 2.5 3 3.5 A 1.5 5 j-JunctionTemperaturs(“Cl -YG$ ' GEIB‘SWYW V°"399 EV) . Normalised RDSlon) and VGSllh) Typical Transfer Charaaerlstlcs v Temperature ‘0 100 ID war: ”we 0.1 0.1 I 10 100 -ID — Drain Current (A) On-Rasistance v Drain Current 0.1 0.2 0.4 0.6 0,5 1.0 I.2 Ll -VSD - Source»Drain Voltage (V) Source-Drain Diode Forward Voltage HDS(on) - Drain-Source On-Resislance (fl) -Isn - Reverse Drain Current (A) 4 00 vww ; A 600 "' M” a) 4.5 “- \ 3 3 500 \ = ‘ a: c... 0 2.5 2 :00 ~ \ 5““ Z 3 3 Cu: E g 300 3 2'5 % \ w 2 u 200 ‘ § . _5 Q 100 \ \ L? 1 .. w 0 ~ 0 0.5 0.1 1 10 we >. 0 Nos-Drain SourceVoltagelV) o 0'5 ‘ La-zhgfgelncij ‘ "5 5 Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
4 of 7
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March 2015
© Diodes Incorporated
ZXM62P02E6
ADVANC E INF ORMA TIO N
-A‘5V as I07- 90% us Charge Currenl Regulator 50x Same as --|zv ==o.zur 9'” T 7 Basic Gale Charge Waveform _L 5 > : 4,5v H¢—. H {H 'Im r, 9M» ‘1 T Switching fime Waveforms mm Wm». , ms Duw Fnzov a o w. Switching Time Test Circuit
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
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March 2015
© Diodes Incorporated
ZXM62P02E6
ADVANC E INF ORMA TIO N
Test Circuits
ms; ZXM62P02E6 <+——>| I<——>I
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
6 of 7
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© Diodes Incorporated
ZXM62P02E6
ADVANC E INF ORMA TIO N
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT26
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
0.95
H
2.90
3.10
3.00
J
0.013
0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
All Dimensions in mm
Dimensions
Value (in mm)
Z
3.20
G
1.60
X
0.55
Y
0.80
C1
2.40
C2
0.95
A
M
JL
D
B C
H
K
X
Z
Y
C1
C2
C2
G
ms. ZXM62P02E6
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
7 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P02E6
ADVANC E INF ORMA TIO N
MPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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