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Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
General Description
The PE64102 is a DuNE™-enhanced digitally tunable
capacitor (DTC) based on pSemi’s UltraCMOS®
technology. DTC products provide a monolithically
integrated impedance tuning solution for demanding
RF applications. They also offer a linear capacitance
change versus tuning state and excellent harmonic
performance compared to varactor-based tunable
solutions.
This highly versatile product can be mounted in series
or shunt configurations and uses a 3-wire (SPI
compatible) serial interface. It has a high ESD rating of
2 kV HBM on all ports making this the ultimate in
integration and ruggedness. The DTC will be offered in
a standard 12-lead 2.0 x 2.0 x 0.55 mm QFN
commercial package.
pSemi’s DuNE™ technology enhancements deliver
high linearity and exceptional harmonics performance.
It is an innovative feature of the UltraCMOS® process,
providing performance superior to GaAs with the
economy and integration of conventional CMOS.
UltraCMOS® Digitally Tunable Capacitor
(DTC) 100–3000 MHz
Features
3-wire (SPI compatible) 8-bit serial interface
with built-in bias voltage generation and
stand-by mode for reduced power
consumption
DuNETM-enhanced UltraCMOS® device
5-bit 32-state digitally tunable capacitor
C = 1.88 pF – 14.0 pF (7.4:1 tuning ratio) in
discrete 391 fF steps
RF power handing (up to 26 dBm, 6 VPK RF)
and high linearity
High quality factor
Wide power supply range (2.3V to 3.6V) and
low current consumption
(typ. IDD = 30 µA @ 2.8V)
Optimized for shunt configuration, but can
also be used in series configuration
Excellent 2 kV HBM ESD tolerance on
all pins
Applications include:
Antenna tuning
Tunable filters
Phase shifters
PE64102
Product Specification
Figure 1. Functional Block Diagram
71-0066-01
Figure 2. Package Type
12-lead 2 x 2 x 0.55 mm QFN
Semi
Product Specification
PE64102
Page 2 of 13
©2018–2021 pSemi Corporation All rights reserved. Document No. DOC-89767-2 │ UltraCMOS® RFIC Solutions
Parameter Configuration Condition Min Typ Max Unit
Operating Frequency Range 7 Both 100 3000 MHz
Minimum Capacitance Shunt 6 State = 00000, 100 MHz (RF+ to Grounded RF-) -10% 1.88 +10% pF
Maximum Capacitance Shunt 6 State = 11111, 100 MHz (RF+ to Grounded RF-) -20% 14.0 +20% pF
Tuning Ratio Shunt 6 C
max/Cmin, 100 MHz 7.4:1
Step Size Shunt 6 5 bits (32 states), constant step size (100 MHz) 0.391 pF
Quality Factor (Cmin) 1 Shunt 6
470 – 582 MHz with Ls removed
698 – 960 MHz, with Ls removed
1710 – 2170 MHz, with Ls removed
50
50
28
Quality Factor (Cmax) 1 Shunt 6
470 – 582 MHz with Ls removed
698 – 960 MHz, with Ls removed
1710 – 2170 MHz, with Ls removed
25
20
5
Self Resonant Frequency Shunt 7 State 00000
State 11111 4.7
1.6 GHz
Harmonics (2fo and 3fo) 4
Shunt 6
470 – 582 MHz, Pin +26 dBm, 50Ω
698 – 915 MHz, Pin +26 dBm, 50Ω
1710 – 1910 MHz, Pin +26 dBm, 50Ω
-36
-36
-36
dBm
dBm
dBm
Series 5
470 – 582 MHz, Pin +20 dBm, 50Ω
698 – 915 MHz, Pin +20 dBm, 50Ω
1710 – 1910 MHz, Pin +20 dBm, 50Ω
-36
-36
-36
dBm
dBm
dBm
3rd Order Intercept Point Shunt 6 IIP3 = (Pblocker + 2*Ptx - [IMD3]) / 2, where IMD3 = -95 dBm,
Ptx = +20 dBm and Pblocker = -15 dBm 60 dBm
Switching Time 2, 3 Shunt 6 State change to 10/90% delta capacitance between only two
states 2 10 µs
Start-up Time 2 Shunt 6 Time from VDD within specification to all performances within
specification 5 20 µs
Wake-up Time 2,3 Shunt
6 State change from standby mode to RF state to all
performances within specification 5 20 µs
Table 1. Electrical Specifications @ 25°C, VDD = 2.8V
Note: 1. Q for a Shunt DTC based on a Series RLC equivalent circuit
Q = XC / R = (X-XL) / R, where X = XL + XC , XL = 2*pi*f*L, XC = -1 / (2*pi*f*C), which is equal to removing the effect of parasitic inductance LS
2. DC path to ground at RF+ and RF– must be provided to achieve specified performance
3. State change activated on falling edge of SEN following data word
4. Between 50Ω ports in series or shunt configuration using a pulsed RF input with 4620 vs period, 50% duty cycle, measured per 3GPPTS45.005
5. In series configuration the greater RF power or higher RF voltage should be applied to RF+
6. RF- should be connected to ground
7. DTC operation above SRF is possible
Semi
VDD
6ND
RF
Product Specification
PE64102
Page 3 of 13
Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
Figure 3. Pin Configuration (Top View)
Table 2. Pin Descriptions
Pin # Pin Name Description
1 SEN Serial Enable
2 GND Digital and RF Ground
3 SCLK Serial Interface Clock Input
4 VDD Power Voltage
5 GND Digital and RF Ground
6 RF- Negative RF Port
1
7 RF- Negative RF Port
1
8 GND Digital and RF Ground 3
9 RF+ Positive RF Port 2
10 RF+ Positive RF Port 2
13 GND Digital and RF Ground 3
12 SDAT Serial Interface Data Input
11 GND Digital and RF Ground
Notes: 1. Pins 6 and 7 must be tied together on PCB board to reduce
inductance
2. Pins 9 and 10 must be tied together on PCB board to reduce
inductance
3. Pins 2, 5, 8, 11 and 13 must be connected together on PCB
SEN
6
7
81
2
3
GND
SCLK
RF+
GND
RF-
13
GND
12 11 10
9
456
8
7
1
2
3
Pin 1
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS®
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE64102 in the 12-lead 2 x 2 mm QFN package is
MSL1.
Table 3. Operating Ranges1
Parameter Symbol Min Typ Max Units
VDD Supply Voltage VDD 2.3 2.8 3.6 V
IDD Power Supply Current
(Normal mode) 6 IDD 30 75 µA
IDD Power Supply Current
(Standby mode) 2, 6 IDD 20 45 µA
Control Voltage High VIH 1.2 3.1 V
Control Voltage Low VIL 0 0.2 V
Peak Operating RF Voltage 5
VP to VM
VP to RFGND
VM to RFGND
6
6
6
VPK
VPK
VPK
RF Input Power (50Ω) 3, 4, 5
shunt
series
+26
+20
dBm
dBm
Input Control Current ICTL 1 10 µA
Operating Temperature Range TOP -40 +85 °C
Storage Temperature Range TST -65 +150 °C
Table 4. Absolute Maximum Ratings
Symbol Parameter/Conditions Min Max Units
VDD Power supply voltage -0.3 4.0 V
VESD ESD Voltage (HBM, MIL_STD
883 Method 3015.7) 2000 V
VESD ESD Voltage (MM, JEDEC
JESD22-A115-A) 100 V
VI Voltage on any DC input -0.3 4.0 V
VESD ESD Voltage (CDM, JEDEC
JESD22-C101) 250 V
Notes: 1. Operation should be restricted to the limits in the Operating Ranges table
2. The DTC is active when STBY is low (set to 0) and in low-current
stand-by mode when high (set to 1)
3. Maximum CW power available from a 50Ω source in shunt configuration
4. Maximum CW power available from a 50Ω source in series configuration
5. RF+ to RF- and RF+ and/or RF- to ground. Cannot exceed 6 VPK or max
RF input power (whichever occurs first)
6. IDD current typical value is based on VDD = 2.8V. Max IDD is based on
Exceeding absolute maximum ratings may cause
permanent damage. Operation between operating
range maximum and absolute maximum for
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS® device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
~Semi
Measured shun c ( @ 100 MHZ) vs. sum
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300
250
200
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Frequency (GHz)
Product Specification
PE64102
Page 4 of 13
©2018–2021 pSemi Corporation All rights reserved. Document No. DOC-89767-2 │ UltraCMOS® RFIC Solutions
Figure 6. Measured Step Size vs State
(frequency)
Figure 5. Measured Shunt S11 (major states)
Performance Plots @ 25°C and 2.8V unless otherwise specified
Figure 8. Measured Shunt C vs
Frequency (major states)
Figure 9. Measured Series S21 vs Frequency
(major states)
Figure 4. Measured Shunt C (@ 100 MHz) vs
State (temperature)
Figure 7. Measured Series S11/S22 (major states)
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Measured 242m 5mm 521 \5 Frequency (majov states)
300 0
—00
—CI
250 —C2
—C24
200 —ca
—016
—c31
c ‘50
(15(821)
mo
50
u 0 5 1 1 5 2 2 5 a o 2 4 6 8
Frequeneyzem Frequency (eHzp
Measured Sew Resonance Frequency vs S1ale
p
or
a
Sen Resonance Fveq uency (GHz)
m 5
m w m
m
o 5 1o 15 20 25 so 55
State [0..3‘]
Product Specification
PE64102
Page 5 of 13
Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
Figure 11. Measured 2-Port Shunt S21 vs
Frequency (major states)
Figure 10. Measured Shunt Q vs
Figure 12. Measured Self Resonance
Frequency vs State
Figure 13. Measured Shunt Q vs State
510 15 20 25 30
0
20
40
60
80
100
120
140
160
State
Q
Measured Q vs. State
100 MHz
470 MHz
698 MHz
1710 MHz
Semi
Product Specification
PE64102
Page 6 of 13
©2018–2021 pSemi Corporation All rights reserved. Document No. DOC-89767-2 │ UltraCMOS® RFIC Solutions
Serial Interface Operation and Sharing
The PE64102 is controlled by a three wire SPI-
compatible interface. As shown in Figure 14, the
serial master initiates the start of a telegram by
driving the SEN (Serial Enable) line high. Each bit
of the 8-bit telegram is clocked in on the rising
edge of the SCL (Serial Clock) line. SDA bits are
clocked by most significant bit (MSB) first, as
shown in Table 5 and Figure 14. Transactions on
SDA (Serial Data) are allowed on the falling edge
of SCL. The DTC activates the data on the falling
edge of SEN. The DTC does not count how many
bits are clocked and only maintains the last 8 bits
it received.
More than 1 DTC can be controlled by one
interface by utilizing a dedicated enable (SEN) line
for each DTC. SDA, SCL, and VDD lines may be
shared as shown in Figure 15. Dedicated SEN
lines act as a chip select such that each DTC will
only respond to serial transactions intended for
them. This makes each DTC change states
sequentially as they are programmed.
Figure 14. Serial Interface Timing Diagram (oscilloscope view)
b5b6
t
R
t
DHD
t
DSU
1/f
CLK
b7 b0b4 b3 b2 b1
D
m-1
<7:0> D
m
<7:0>
b0
D
m-2
<7:0>
t
EPW
t
F
t
ESU
t
EHD
SEN
SCL
SDA
DTC Data
Semi
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Product Specification
PE64102
Page 7 of 13
Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
Table 5. 6-Bit Serial Programming Register Map
Table 6. Serial Interface AC Characteristics
2.3V < VDD < 3.6V, -40 °C < TA < +85 °C, unless otherwise specified
Symbol Parameter Min Max Unit
fCLK Serial Clock Frequency 26 MHz
tR SCL, SDA, SEN Rise Time 6.5 ns
tF SCL, SDA, SEN Fall Time 6.5 ns
tESU SEN rising edge to SCL rising edge 19.2 ns
tEHD SCL rising edge to SEN falling edge 19.2 ns
tDSU SDA valid to SCL rising edge 13.2 ns
tDHD SDA valid after SCL rising edge 13.2 ns
tEOW SEN falling edge to SEN rising edge 38.4 ns
b4 b3 b2 b1 b0
d4 d3 d2 d1 d0
b5
STB1
b7 b6
0 0
MSB (first in) LSB (last in)
Note: 1. The DTC is active when low (set to 0) and in low-current stand-by
mode when high (set to 1)
Figure 15. Recommended Bus sharing
SCL
SDA
VDD
GND
DGND
RF-
RF+
SCL
SDA
VDD
SEN
GND
DGND
RF-
RF+
SCL
SDA
VDD
DTC 1
SEN
SEN2
SEN1
DTC 2
Semi
R R
? RFGND
Product Specification
PE64102
Page 8 of 13
©2018–2021 pSemi Corporation All rights reserved. Document No. DOC-89767-2 │ UltraCMOS® RFIC Solutions
Equivalent Circuit Model Description
The DTC Equivalent Circuit Model includes all
parasitic elements and is accurate in both Series
and Shunt configurations, reflecting physical circuit
behavior accurately and providing very close
correlation to measured data. It can easily be used
in circuit simulation programs. Simple equations
are provided for the state dependent parameters.
The Tuning Core capacitance CS represents
capacitance between RF+ and RF- ports. It is
linearly proportional to state (0 to 31 in decimal) in
a discrete fashion. The Series Tuning Ratio is
defined as CSmax/CSmin.
CP1 and CP2 represent the circuit and package
parasitics from RF ports to GND. In shunt
configuration the total capacitance of the DTC is
higher due to parallel combination of CP and CS. In
Series configuration, CS and CP do not add in
parallel and the DTC appears as an impedance
transformation network.
Parasitic inductance due to circuit and package is
modeled as LS and causes the apparent
capacitance of the DTC to increase with frequency
until it reaches Self Resonant Frequency (SRF).
The value of SRF depends on state and is
approximately inversely proportional to the square
root of capacitance.
The overall dissipative losses of the DTC are
modeled by RS, RP1 and RP2 resistors. The
parameter RS represents the Equivalent Series
Resistance (ESR) of the tuning core and is
dependent on state. RP1 and RP2 represent losses
due to the parasitic and biasing networks.
Table 8. Maximum Operating RF Voltage
Condition Limit
VP to VM 6 VPK
VP to RFGND 6 VPK
VM to RFGND 6 VPK
Figure 16. Equivalent Circuit Model Schematic
Table 7. Equivalent Circuit Model Parameters
Variable Equation (state = 0, 1, 2…31) Unit
CS 0.394*state + 1.456 pF
RS 15/(state+15/(state+0.4)) + 0.4 Ω
CP1 -0.0026*state + 0.4155 pF
CP2 0.0029*state + 0.4914 pF
RP1 4 Ω
RP2 22000 + 6*(state)^3 Ω
LS 0.4 nH
Semi
Product Specification
PE64102
Page 9 of 13
Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
Table 9. Equivalent Circuit Data
State DTC Core Parasitic Elements
Binary Decimal Cs [pF] Rs [Ω] Cp1 [pF] Cp2 [pF] Rp2 [kΩ] Ls [nH] Rp1 [Ω]
00000 0 1.40 0.80 0.42 0.49 22.0
0.40
00001 1 1.79 1.68 0.41 0.49 22.0
00010 2 2.19 2.22 0.41 0.50 22.0
00011 3 2.58 2.42 0.41 0.50 22.2
00100 4 2.98 2.42 0.41 0.50 22.4
00101 5 3.37 2.33 0.40 0.51 22.8
00110 6 3.76 2.20 0.40 0.51 23.3
00111 7 4.16 2.06 0.40 0.51 24.1
01000 8 4.55 1.93 0.39 0.51 25.1
01001 9 4.95 1.82 0.39 0.52 26.4
01010 10 5.34 1.71 0.39 0.52 28.0
01011 11 5.73 1.62 0.39 0.52 30.0
01100 12 6.13 1.54 0.38 0.53 32.4
01101 13 6.52 1.46 0.38 0.53 35.2
01110 14 6.92 1.40 0.38 0.53 38.5
01111 15 7.31 1.34 0.38 0.53 42.3
10000 16 7.70 1.29 0.37 0.54 46.6
10001 17 8.10 1.24 0.37 0.54 51.5
10010 18 8.49 1.20 0.37 0.54 55.0
10011 19 8.89 1.16 0.37 0.55 63.2
10100 20 9.28 1.12 0.36 0.55 70.0
10101 21 9.67 1.09 0.36 0.55 77.6
10110 22 10.07 1.06 0.36 0.56 85.9
10111 23 10.46 1.03 0.36 0.56 95.0
11000 24 10.86 1.01 0.35 0.56 104.9
11001 25 11.25 0.99 0.35 0.56 115.8
11010 26 11.64 0.96 0.35 0.57 127.5
11011 27 12.04 0.94 0.35 0.57 140.1
11100 28 12.43 0.93 0.34 0.57 153.7
11101 29 12.83 0.91 0.34 0.58 168.3
11110 30 13.22 0.89 0.34 0.58 184.0
11111 31 13.61 0.88 0.33 0.58 200.7
4.0
Semi
Product Specification
PE64102
Page 10 of 13
©2018–2021 pSemi Corporation All rights reserved. Document No. DOC-89767-2 │ UltraCMOS® RFIC Solutions
Figure 17. Evaluation Board Layout
PRT-20810
Evaluation Board
The 101-0700 Evaluation Board (EVB) was
designed for accurate measurement of the DTC
impedance and loss. Two configurations are
available: 1 Port Shunt (J3) and 2 Port Shunt (J4,
J5). Three calibration standards are provided. The
open (J2) and short (J1) standards (104 ps delay)
are used for performing port extensions and
accounting for electrical length and transmission
line loss. The Thru (J9, J10) standard can be used
to estimate PCB transmission line losses for scalar
de-embedding of the 2 Port Shunt configuration (J4,
J5).
The board consists of a 4 layer stack with 2 outer
layers made of Rogers 4350B (εr = 3.48) and 2
inner layers of FR4 (εr = 4.80). The total thickness
of this board is 62 mils (1.57 mm). The inner layers
provide a ground plane for the transmission lines.
Each transmission line is designed using a coplanar
waveguide with ground plane (CPWG) model using
a trace width of 32 mils (0.813 mm), gap of 15 mils
(0.381 mm), and a metal thickness of 1.4 mils
(0.036 mm).
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Product Specification
PE64102
Page 11 of 13
Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
SHORT
1PORTSHUNT
2PORTSHUNT
J2
SMA CONN
TP4
J9
SMA CONN
J10
SMA CONN
J1
SMA CONN
TP5
J3
SMA CONN
C3
100pF
1
1
3
3
5
5
7
7
22
44
66
88
10 10
12 12
14 14 13
13
9
9
11
11
J8
14 PIN HEADER
J5
SMA CONN
C7
100pF
1
1
3
3
5
5
7
7
22
44
66
88
10 10
12 12
14 14 13
13
9
9
11
11
J11
14 PIN HEADER
R3 DNI
R1 DNI
R2 DNI
R4 DNI
C9
100pF
C10
100pF
C11
100pF
R5 DNI
R6 DNI
R7 DNI
R8 DNI
C12
100pF
C13
100pF
C14
100pF
R9 DNI
R10 DNI
R11 DNI
R12 DNI
R13 DNI
R14 DNI
J4
SMA CONN
6RF-
7RF-
2GND
4VDD
1
SEN
12
SDAT
10
RF+
9
RF+
11 GND
3SCL K
5GND
8GND
13 PADDLE
U1
PE6410X_QFN_12L_2X2
6RF-
7RF-
2GND
4VDD
1
SEN
12
SDAT
10
RF+
9
RF+
11 GND
3SCL K
5GND
8GND
13 PADDLE
U2
PE6410X_QFN_12L_2X2
OPEN
THRU
SCL
SEN
SDA
VDD
VDD_1
SCL_1
SEN_1
SDA_1
Figure 18. Evaluation Board Schematic
DOC-31126
Product Specification
PE64102
Page 12 of 13
©2018–2021 pSemi Corporation All rights reserved. Document No. DOC-89767-2 │ UltraCMOS® RFIC Solutions
Figure 19. Package Drawing
12-lead 2 x 2 x 0.55 mm QFN
Figure 20. Top Marking Specifications
PPZZ
YWW
Marking Spec
Symbol
Package
Marking Definition
PP CS Part number marking for PE64102
ZZ 00-99 Last two digits of lot code
Y 0-9 Last digit of year, starting from 2009
(0 for 2010, 1 for 2011, etc)
WW 01-53 Work week
17-0112
2.00
2.00
A
0.10 C
C
0.10 C
TOP VIEW
SIDE VIEW
BOTTOM VIEW
0.05 C
SEATING PLANE
PIN #1 Identifier
B
(X2)
0.10 C A B
0.05 C
ALL FEATURES
RECOMMENDED LAND PATTERN
0.10 C
(X2)
1.10±0.05
1.10±0.05
0.50
0.20±0.05
(X12) 0.275±0.05
(X12)
1.00
1
3
4
6
79
10
12
2.40
0.475
(X12)
0.25
(X12)
0.50
1.10
2.40
1.10
0.152 REF. 0.05 MAX
0.60 MAX
DOC-01882
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Product Specification
PE64102
Page 13 of 13
Document No. DOC-89767-2 │www.psemi.com ©2018–2021 pSemi Corporation All rights reserved.
Figure 21. Tape and Reel Specifications
12-lead 2 x 2 x 0.55 mm QFN
Tape Feed Direction
Table 10. Ordering Information
Order Code Package Description Shipping Method
PE64102B-Z 12-lead 2 x 2 x 0.55 mm QFN Package Part in Tape and Reel 3000 units/T&R
EK64102-12 Evaluation Kit Evaluation Kit 1 Set/Box
Device Orientation in Tape
Sales Contact and Information
For sales and contact information please visit www.psemi.com.
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