AON6246 Datasheet by Alpha & Omega Semiconductor Inc.

ALPHA&0MEGA SEMICONDUCTOR T_ TTT LNJ mmmm age 60

AON6246

60V N-Channel MOSFET

General Description Product Summary

V

DS

I

D

(at V

GS

=10V) 80A

R

DS(ON)

(at V

GS

=10V) < 6.4mΩ

R

DS(ON)

(at V

GS

= 4.5V) < 8mΩ

100% UIS Tested

100% R

g

Tested

Symbol

V

The AON6246 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of R

DS(ON)

and C

rss

.In addition,switching behavior is well controlled

with a soft recovery body diode.This device is ideal for

boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

V

Maximum UnitsParameter

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

60V

Drain-Source Voltage

60

G

D

S

Top View

1

2

3

4

8

7

6

5

PIN1

DFN5X6

Top View Bottom View

V

DS

V

GS

I

DM

I

AS

, I

AR

E

AS

, E

AR

T

J

, T

STG

Symbol

t ≤ 10s

Steady-State

R

θJC

Maximum Junction-to-Case °C/W

°C/W

Maximum Junction-to-Ambient

A D

1.1

55

1.5

Power Dissipation

B

P

D

W

Power Dissipation

A

P

DSM

W

T

A

=70°C

83

1.4

T

A

=25°C

A

T

A

=25°C I

DSM

A

T

A

=70°C

I

D

80

51

T

C

=25°C

T

C

=100°C

Avalanche energy L=0.1mH

C

mJ

Avalanche Current

C

10

Continuous Drain

Current

125

13

A50

V

V±20Gate-Source Voltage

Drain-Source Voltage

60

Units

Junction and Storage Temperature Range -55 to 150 °C

Thermal Characteristics

Maximum Junction-to-Ambient

A

°C/W

R

θJA

14

40

17

170Pulsed Drain Current

C

Continuous Drain

Current

Parameter Typ Max

T

C

=25°C

2.3

33

T

C

=100°C

Rev 0: July 2011

www.aosmd.com Page 1 of 6

ALPHA & OMEGA AMICOND L'CTOR

AON6246

Symbol Min Typ Max Units

BV

DSS

60 V

V

DS

=60V, V

GS

=0V 1

T

J

=55°C 5

I

GSS

100 nA

V

GS(th)

Gate Threshold Voltage 1.5 2 2.5 V

I

D(ON)

170 A

5.3 6.4

T

J

=125°C 9.3 11.2

6.3 8 mΩ

g

FS

100 S

V

SD

0.7 1 V

I

S

85 A

C

iss

2280 2850 3420 pF

C

oss

180 258 335 pF

C

rss

4.5 15.5 26.5 pF

R

g

0.4 0.8 1.2 Ω

Q

g

(10V) 26 33 40 nC

Q

g

(4.5V) 11 14 20 nC

Q

gs

9 nC

Q

gd

4 nC

t

D(on)

8 ns

t

2

ns

Drain-Source Breakdown Voltage

On state drain current

I

D

=250µA, V

GS

=0V

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=20A

Reverse Transfer Capacitance

V

GS

=0V, V

DS

=30V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

I

DSS

µA

V

DS

=V

GS

,

I

D

=250µA

V

DS

=0V, V

GS

=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

R

DS(ON)

Static Drain-Source On-Resistance mΩ

I

S

=1A,V

GS

=0V

V

DS

=5V, I

D

=20A

V

GS

=4.5V, I

D

=20A

V

=10V, V

=30V, R

=1.5

Ω

,

Gate resistance V

GS

=0V, V

DS

=0V, f=1MHz

Total Gate Charge

V

GS

=10V, V

DS

=30V, I

D

=20A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Maximum Body-Diode Continuous Current

G

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

t

r

2

ns

t

D(off)

29 ns

t

f

4 ns

t

rr

13 19 25 ns

Q

rr

50 72 95 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time I

F

=20A, dI/dt=500A/µs

V

GS

=10V, V

DS

=30V, R

L

=1.5

Ω

,

R

GEN

=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Charge I

F

=20A, dI/dt=500A/µs

Turn-On Rise Time

Turn-Off DelayTime

A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial TJ =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 0: July 2011 www.aosmd.com Page 2 of 6

ALPHA & 0M A SEMICONIJUL 0R sv/ (More E)

AON6246

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

0

20

40

60

80

100

1 1.5 2 2.5 3 3.5 4 4.5 5

ID(A)

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

2

4

6

8

10

0 5 10 15 20 25 30

RDS(ON) (mΩ

Ω

Ω)

ID(A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0 25 50 75 100 125 150 175

Normalized On-Resistance

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

VGS=4.5V

ID=20A

VGS=10V

ID=20A

25°C

125°C

V

DS

=5V

VGS=4.5V

VGS=10V

0

20

40

60

80

100

0 1 2 3 4 5

ID(A)

VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

V

GS

=3V

4V

4.5V

6V

10V

3.5V

40

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

IS(A)

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

(Note E)

0

5

10

15

2 4 6 8 10

RDS(ON) (mΩ

Ω

Ω)

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

ID=20A

25°C

125°C

Rev 0: July 2011 www.aosmd.com Page 3 of 6

ALPHA&0MEGA SEMICONDUCTOR review”) Figure 9: Maximum Forward Elam Sale Flgure in: Slngle Pulse Power Raiing .iurrciiorr-mmse

AON6246

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

0

2

4

6

8

10

0 5 10 15 20 25 30 35 40

VGS (Volts)

Qg(nC)

Figure 7: Gate-Charge Characteristics

0

400

800

1200

1600

2000

2400

2800

3200

0 10 20 30 40 50 60

Capacitance (pF)

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

0

40

80

120

160

200

0.0001 0.001 0.01 0.1 1 10

Power (W)

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-Case

Coss

C

rss

VDS=30V

ID=20A

TJ(Max)=150°C

TC=25°C

10

µ

s

0.0

0.1

1.0

10.0

100.0

1000.0

0.01 0.1 1 10 100 1000

ID(Amps)

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

10

µ

s

10ms

1ms

DC

RDS(ON)

TJ(Max)=150°C

T

C

=25°C

100

µ

s

40

(Note F)

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Zθ

θ

θJC Normalized Transient

Thermal Resistance

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

D=Ton/T

TJ,PK=TC+PDM.ZθJC.RθJC

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Operating Area (Note F)

RθJC=1.5°C/W

Rev 0: July 2011 www.aosmd.com Page 4 of 6

ALPHA&0MEGA SEMICONDUCTOR q/ \ FIB”! N: Cum"! DHﬂlan (Mme F) Figum15:slngle Pulse Power Rating Junction-m-

AON6246

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

0

20

40

60

80

100

0 25 50 75 100 125 150

Power Dissipation (W)

TCASE (°C)

Figure 13: Power De-rating (Note F)

0

20

40

60

80

100

0 25 50 75 100 125 150

Current rating ID(A)

TCASE (°C)

Figure 14: Current De

-

rating (Note F)

1

10

100

1000

10000

0.00001 0.001 0.1 10 1000

Power (W)

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction

-

to

-

TA=25°C

1

10

100

1000

1 10 100 1000

IAR (A) Peak Avalanche Current

Time in avalanche, tA(µ

µµ

µs)

Figure 12: Single Pulse Avalanche capability

(Note C)

TA=25°C

TA=150°C

TA=100°C

TA=125°C

40

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Zθ

θ

θJA Normalized Transient

Thermal Resistance

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Figure 14: Current De

-

rating (Note F)

Figure 15: Single Pulse Power Rating Junction

-

to

-

Ambient (Note H)

RθJA=55°C/W

Rev 0: July 2011 www.aosmd.com Page 5 of 6

?

AON6246

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

VDC

DUT Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

Id

+

L

Vds

BV

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vds

DSS

2

E = 1/2 LI

AR

Vdd

Vgs

Rg

DUT

-

+

VDC

Vgs

Id

Vgs

I

Ig

Vgs

-

+

VDC

DUT

L

Vgs

Vds

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I

F

AR

dI/dt

I

RM

rr

Vdd

Q = - Idt

t

rr

Rev 0: July 2011 www.aosmd.com Page 6 of 6

AON6246 Datasheet by Alpha & Omega Semiconductor Inc.

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