© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 7
1Publication Order Number:
NIF62514/D
NIF62514
Self-Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
•Current Limitation
•Thermal Shutdown with Automatic Restart
•Short Circuit Protection
•Low RDS(on)
•IDSS Specified at Elevated Temperature
•Avalanche Energy Specified
•Slew Rate Control for Low Noise Switching
•Overvoltage Clamped Protection
•This is a Pb−Free Device
6.0 AMPERES*
40 VOLTS CLAMPED
RDS(on) = 90 mW
MPWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
RG
Overvoltage
Protection
ESD Protection
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*Limited by the current limit circuit.
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
62514 = Specific Device Code
G= Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
62514G
G
23
4
GATE
DRAIN
SOURCE
DRAIN
23
4
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NIF62514T1G SOT−223
(Pb−Free)
1000/Tape & Reel
NIF62514T3G SOT−223
(Pb−Free)
4000/Tape & Reel
A
NIF62514
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2
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 40 Vdc
Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW)VDGR 40 Vdc
Gate−to−Source Voltage VGS "16 Vdc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Pulsed (tp ≤ 10 ms)
ID
ID
IDM
Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TA = 25°C (Note 3)
PD1.1
1.73
8.93
W
Thermal Resistance,
Junction−to−Ta b
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJT
RqJA
RqJA
14
114
72.3
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH, RG = 25 W)
EAS 300 mJ
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1″ pad board.
3. Mounted onto large heatsink.
DRAIN
SOURCE
GATE VDS
VGS
ID
IG
+
−
+
−
Figure 1. Voltage and Current Convention
NIF62514
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3
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4)
V(BR)DSS 42
42
46
45
50
50
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4)
IDSS
−
−
0.5
2.0
2.0
10
mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
(VGS = −5.0 Vdc, VDS = 0 Vdc)
IGSS
−
−
50
550
100
1000
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th) 1.0
−
1.7
4.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 1.4 Adc, TJ @ 150°C) (Note 4)
RDS(on)
−
−
90
165
100
190
mW
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 1.4 Adc, TJ @ 150°C) (Note 4)
RDS(on)
−
−
105
185
120
210
mW
Source−Drain Forward On Voltage
(IS = 7 A, VGS = 0 V)
VSD −1.05 −V
SWITCHING CHARACTERISTICS (Note 4)
Turn−on Delay Time 10% Vin to 10% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
td(on) −4.0 8.0 ms
Turn−on Rise Time 10% ID to 90% ID
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
trise −11 20 ms
Turn−off Delay Time 90% Vin to 90% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
td(off) −32 50 ms
Turn−off Fall Time 90% ID to 10% ID
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
tfall −27 50 ms
Slew−Rate On RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
−dVDS/dton −1.5 2.5 ms
Slew−Rate Off RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff −0.6 1.0 ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit (VGS = 5.0 Vdc)
(VGS = 5.0 Vdc, TJ = 150°C) (Note 4)
ILIM 6.0
3.0
9.0
5.0
11
8.0
Adc
Current Limit (VGS = 10 Vdc)
(VGS = 10 Vdc, TJ = 150°C) (Note 4)
ILIM 7.0
4.0
10.5
7.5
13
10
Adc
Temperature Limit (Turn−off) (Note 4) VGS = 5.0 Vdc TLIM(off) 150 175 200 °C
Temperature Hysteresis (Note 4) VGS = 5.0 Vdc DTLIM(on) −15 −°C
Temperature Limit (Turn−off) (Note 4) VGS = 10 Vdc TLIM(off) 150 165 185 °C
Temperature Hysteresis (Note 4) VGS = 10 Vdc DTLIM(on) −15 −°C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V
Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V
4. Not subject to production testing.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
NIF62514
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4
TYPICAL ELECTRICAL CHARACTERISTICS
3 V
7 V
3 V
0
4
6
1
42
ID, DRAIN CURRENT (AMPS)
0
8
2
3
5
1350
8
6
2
42
ID, DRAIN CURRENT (AMPS)
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics Figure 2. Output Characteristics
0
10
8
6
4
21.51
2
12
0
0.5 2.5 3 3.5
Figure 3. Output Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 5. Drain−to−Source Resistance versus
Junction Temperature
Figure 6. Drain−to−Source Resistance versus
Junction Temperature
12
VGS = 10 V
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
6
10
135
5 V
TJ = 25°C
TJ = 150°C
4 4.5 5
4 V
0
8
6
2
42
ID, DRAIN CURRENT (AMPS)
0
14
4
6
10
135
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ = −40°C
VGS = 10 V
125
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
−50 50 75250 100−25 125
50
150
25
100
0
175
250
75
150
VGS = 10 V
ID = 1.4 A
Maximum
Typical
VDS = 5 V
TJ = 25°C
TJ = −40°C
6 V
7 V
TJ = 150°C
VGS = 10 V
5 V
4 V
6 V
6
7
12
3 V
5 V
4 V
6 V
7 V
200
225
125
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
−50 50 75250 100−25 125
50
150
25
100
0
175
250
75
150
VGS = 5 V
ID = 1.4 A
Maximum
Typical
200
225
VTH
vTH — 4 Slgma
Dmy Cycle : 0 5
0.2
0.1
0.05
0.02
Smgle Pm
‘
\
x
\
‘f‘
\
4.
_T__
NIF62514
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5
TJ, JUNCTION TEMPERATURE (°C)
1.00
0
Figure 7. Drain−to−Source Resistance versus
Junction Temperature
Figure 8. Gate Threshold Voltage versus
Temperature
TEMPERATURE (°C)
GATE THRESHOLD VOLTAGE (V)
−50 7010−10−30 90 130
VDS = 32 V
15030 50 110
−50 25 50075−25 100
1
2
0
4
150
Typical
IDSS, DRAIN−TO−SOURCE LEAKAGE
CURRENT (mA)
0.25
125
3
0.50
0.75
1.25
1.50
1.75
2.00
2.25
2.50
VTH + 4 Sigma
VTH − 4 Sigma
VTH
ID = 150 mA
0
Figure 9. Short−circuit Response
TIME (ms)
DRAIN CURRENT (AMPS)
30512 4
2
4
6
8
10
12
Current Limit
Temperature Limit
VGS = 10 V
VGS = 5 V
t,TIME (S)
Figure 10. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on minimum pad area)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY
FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) − TA = P(pk) RqJA(t)
RqJC @ R(t) for t ≤ 0.02
s
0.00001 0.0001 0.001 0.01 0.1 1 10
100
10
1
0.1
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Single Pulse
Duty Cycle = 0.5
0.02
0.01
0.05
0.1
0.2
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NIF62514
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6
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
qq
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NIF62514/D
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