2SK3868(Q,M) Toshiba Semiconductor and Storage | Single FETs, MOSFETs

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2SK3868(Q,M)
DigiKey Part Number	2SK3868(Q,M)-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	2SK3868(Q,M)
Description	MOSFET N-CH 500V 5A TO220SIS
Customer Reference
Detailed Description	N-Channel 500 V 5A (Ta) 35W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 1mA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Packaging Bulk	Vgs (Max) ±30V
Part Status Obsolete	Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
FET Type N-Channel	Power Dissipation (Max) 35W (Tc)
Technology MOSFET (Metal Oxide)	Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 500 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 5A (Ta)	Supplier Device Package TO-220SIS
Drive Voltage (Max Rds On, Min Rds On) 10V	Package / Case TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs 1.7Ohm @ 2.5A, 10V	Base Product Number 2SK3868

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Obsolete

This product is no longer manufactured.

2SK3868(Q,M)